Light emitting semiconductor bonding structure and method of manufacturing the same

Abstract

Disclosed is a light emitting semiconductor bonding structure and its manufacturing method. The light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits. The ohmic contact N electrode layer and P electrode layer are formed on the N-type contact layer and the P-type contact layer of the light emitting semiconductor respectively. The first metallic layer and the second metallic layer are formed on the surface of the substrate by means of immersion plating or deposition. The metallic layers are connected electrically to the corresponding electric signal input/output nodes of the electric circuit of the substrate. The first metallic layer and the second metallic layer cooperate with the N electrode layer and the P electrode layer of the light emitting semiconductor respectively, such that the first metallic layer and the second metallic layer correspond to and are bonded onto the N electrode layer and the P electrode layer respectively through the supersonic welding, and as such the light emitting semiconductor is bonded onto the substrate, and thus realizing the electric connection in-between.

1 . A light emitting semiconductor bonding structure, comprising a structure formed by bonding a substrate onto a light emitting semiconductor, the substrate being a structure containing electric circuit, the ohmic contact N electrode layer and P electrode layer formed on the N-type contact layer and the P-type contact layer of the light emitting semiconductor respectively; and 
 the first metallic layer and the second metallic layer being on the surface of the substrate, which are connected electrically to corresponding electric signal input/output nodes of the electric circuit of the substrate, and the first metallic layer and the second metallic layer cooperating with the N electrode layer and the P electrode layer of the light emitting semiconductor respectively, such that the first metallic layer and the second metallic layer correspond to and are bonded onto the N electrode layer and the P electrode layer respectively, as such the light emitting semiconductor is bonded onto the substrate, and thus realizing the electric connection in-between.    
   
   
       2 . The light emitting semiconductor bonding structure as claimed in  claim 1 , wherein a lead frame is provided on the substrate to connect electrically to the light emitting semiconductor to accommodate the input/output of the electric signal of the light emitting semiconductor.  
   
   
       3 . The light emitting semiconductor bonding structure as claimed in  claim 1 , wherein areas of the first metallic layer and the second metallic layer correspond respectively to those of the N electrode layer and the P electrode layer, so as to form contact areas of approximately the same size.  
   
   
       4 . A light emitting semiconductor bonding method for bonding a substrate onto a light emitting semiconductor, the substrate being a structure containing electric circuits, an ohmic contact N electrode layer and an ohmic contact P electrode layer being formed on the N-type contact layer and P-type contact layer of the light emitting semiconductor respectively, and the method comprising the following steps: 
 (a) depositing and forming the first metallic layer and the second metallic layer on the corresponding positions of the substrate, and the positions of the first metallic layer and the second metallic layer corresponding to those of the N electrode layer and the P electrode layer; and    (b) flip-placing the light emitting semiconductor on the substrate, such that the N electrode layer and the P electrode layer correspond to and are stacked on the first metallic layer and the second metallic layer, and then bonding the N electrode layer onto the first metallic layer and bonding the P electrode layer onto the second metallic layer by means of the bonding technology; wherein the areas of the first metallic layer and the second metallic layer correspond to those of the N electrode layer and the P electrode layer, so as to form the contact areas of approximately the same size.    
   
   
       5 . The light emitting semiconductor bonding method as claimed in  claim 4 , wherein the first metallic layer and the second metallic layer correspond to the electric circuit of the substrate and the N electrode layer and the P electrode layer of the light emitting semiconductor, and the junction interfaces are deposited on the surfaces of the N electrode layer and the P electrode layer, and are formed between the electric signal input/output node in the electric circuit of the substrate and the N electrode layer and the P electrode layer of the light emitting semiconductor.  
   
   
       6 . The light emitting semiconductor bonding method as claimed in  claim 4 , wherein the first metallic layer and the second metallic layer are formed on the substrate by means of immersion-plating.  
   
   
       7 . The light emitting semiconductor bonding method as claimed in  claim 4 , wherein the ordinary metal deposition methods are utilized to form the first metallic layer and the second metallic layer on the substrate, such as physical vapor deposition (PVD), chemical vapor deposition(CVD), or electroplating.  
   
   
       8 . The light emitting semiconductor bonding method as claimed in  claim 4 , wherein the light emitting semiconductor is flip-placed on the substrate, such that the N electrode layer and the P electrode layer correspond to and are stacked on the first metallic layer and the second metallic layer, and then bonding the N electrode layer onto the first metallic layer and bonding the P electrode layer onto the second metallic layer by means of the ultra-sonic welding technology.