Inventor · disambiguated record

Feng-Chi Hung

Also filed as: HUNG FENG-CHI

138 granted patents·45 pending applications·660 citations·filing 2006–2025

99Inventor score

Technology areasH10F H10W H01L H10D H10P

Files withTAIWAN SEMICONDUCTOR MFG CO LTD159 TAIWAN SEMICONDUCTOR MFG16 LIN JENG-SHYAN2 TSAI SHUANG-JI2 CHEN SZU-YING1

Top patents by PatentIndex Score

183 records

0199US11596800B2Interconnect structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·6 cites·20 claims
0298US11069736B2Via support structure under pad areas for BSI bondability improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 20, 2021·6 cites·20 claims
0398US9704827B2Hybrid bond pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 11, 2017·32 cites·20 claims
0498US9666624B2Mechanisms for forming image-sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 30, 2017·13 cites·20 claims
0598US8736006B1Backside structure for a BSI image sensor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 27, 2014·31 cites·20 claims
0697US11791357B2Composite BSI structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·5 cites·20 claims
0797US11437420B2Image sensor with overlap of backside trench isolation structure and vertical transfer gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·4 cites·20 claims
0897US10515990B2Semiconductor devices having reduced noiseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·11 cites·20 claims
0997US9728521B2Hybrid bond using a copper alloy for yield improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·227 cites·20 claims
1097US9136298B2Mechanisms for forming image-sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 15, 2015·15 cites·20 claims
1196US10038025B2Via support structure under pad areas for BSI bondability improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·11 cites·20 claims
1295US11011567B2Structure and method for 3D image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·3 cites·20 claims
1395US9449914B2Stacked integrated circuits with redistribution linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 20, 2016·21 cites·20 claims
1494US11901387B2Image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
1594US11211419B2Composite bsi structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·4 cites·20 claims
1694US10566374B2Via support structure under pad areas for BSI bondability improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 18, 2020·7 cites·20 claims
1794US10461109B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 29, 2019·9 cites·20 claims
1894US10269768B2Stacked integrated circuits with redistribution linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·9 cites·20 claims
1994US10153316B2Mechanisms for forming image sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·6 cites·20 claims
2094US9123615B2Vertically integrated image sensor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 1, 2015·11 cites·20 claims
2193US11342374B2Mechanisms for forming image-sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·2 cites·20 claims
2293US10283549B2Via support structure under pad areas for BSI bondability improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·6 cites·20 claims
2393US10038026B2Bond pad structure for bonding improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·7 cites·20 claims
2493US9871070B2Voltage biased metal shielding and deep trench isolation for backside illuminated (BSI) image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·10 cites·20 claims
2593US9312294B2Semiconductor devices, methods of manufacturing thereof, and image sensor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 12, 2016·6 cites·20 claims
2692US9780137B2Mechanisms for forming image-sensor device with epitaxial isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 3, 2017·7 cites·22 claims
2792US9666566B13DIC structure and method for hybrid bonding semiconductor wafersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 30, 2017·9 cites·20 claims
2892US9525001B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 20, 2016·9 cites·20 claims
2992US9224770B2Image sensor device and methodLIN JENG-SHYAN·Filed 2012·Granted Dec 29, 2015·7 cites·20 claims
3092US8883544B2Method of forming an image deviceCHEN SZU-YING·Filed 2012·Granted Nov 11, 2014·5 cites·20 claims
3191US12310137B2Isolation structure to increase image sensor performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·1 cites·20 claims
3291US9666630B2Semiconductor devices, methods of manufacturing thereof, and image sensor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 30, 2017·5 cites·20 claims
3391US9287312B2Imaging sensor structure and methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 15, 2016·7 cites·20 claims
3490US10672819B2Mechanisms for forming image-sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·3 cites·20 claims
3590US9627430B2Method and apparatus for low resistance image sensor contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·3 cites·20 claims
3690US9455158B23DIC interconnect devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 27, 2016·10 cites·20 claims
3790US9041206B2Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 26, 2015·11 cites·20 claims
3889US11984465B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·1 cites·20 claims
3989US10797091B2Semiconductor imaging device having improved dark current performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·2 cites·20 claims
4089US10622394B2Image sensing deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 14, 2020·5 cites·20 claims
4189US10014340B2Stacked SPAD image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 3, 2018·7 cites·20 claims
4289US9764153B2Interconnect structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 19, 2017·7 cites·17 claims
4388US11908878B2Image sensor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·1 cites·20 claims
4488US10727265B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·3 cites·20 claims
4588US9059061B2Structure and method for 3D image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 16, 2015·3 cites·20 claims
4688US9006080B2Varied STI liners for isolation structures in image sensing devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 14, 2015·8 cites·20 claims
4788US2025338658A1Stacked structure for cmos image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4887US11804473B2Hybrid bond pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·1 cites·20 claims
4987US10157959B2Interconnect structure for stacked device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 18, 2018·3 cites·20 claims
5086US9905605B2Phase detection autofocus techniquesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 27, 2018·5 cites·20 claims

Showing the top 50 of 183 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →