Inventor · disambiguated record
Ferdinando Iucolano
Also filed as: IUCOLANO FERDINANDO
31 granted patents·32 pending applications·33 citations·filing 2016–2025
95Inventor score
Top patents by PatentIndex Score
63 records- 0196US11222969B2Normally-off transistor with reduced on-state resistance and manufacturing methodST MICROELECTRONICS SRL·Filed 2020·Granted Jan 11, 2022·4 cites·20 claims
- 0291US10050136B2High-power and high-frequency heterostructure field-effect transistorST MICROELECTRONICS SRL·Filed 2016·Granted Aug 14, 2018·6 cites·16 claims
- 0390US10381470B2Double-channel HEMT device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2016·Granted Aug 13, 2019·5 cites·23 claims
- 0486US2025040173A1Double-channel hemt device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 0585US11489068B2Double-channel HEMT device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2020·Granted Nov 1, 2022·1 cites·20 claims
- 0684US2025280560A1Normally-off transistor with reduced on-state resistance and manufacturing methodST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 0783US10566450B2Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2018·Granted Feb 18, 2020·4 cites·20 claims
- 0883US2025280553A1Hemt transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 0981US12148823B2Double-channel HEMT device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2022·Granted Nov 19, 2024·0 cites·16 claims
- 1081US11316038B2HEMT transistor with adjusted gate-source distance, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2019·Granted Apr 26, 2022·2 cites·19 claims
- 1181US10651304B2High-power and high-frequency heterostructure field-effect transistorST MICROELECTRONICS SRL·Filed 2019·Granted May 12, 2020·2 cites·20 claims
- 1281US2024178301A1Hemt transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1380US10896969B2Manufacturing method of an HEMT transistor of the normally off type with reduced resistance in the on state and HEMT transistorST MICROELECTRONICS SRL·Filed 2019·Granted Jan 19, 2021·2 cites·17 claims
- 1479US10522646B2HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2016·Granted Dec 31, 2019·2 cites·23 claims
- 1578US2025022947A1Hemt transistor with adjusted gate-source distance, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 1676US9882040B2Method for manufacturing a HEMT transistor and HEMT transistor with improved electron mobilityST MICROELECTRONICS SRL·Filed 2016·Granted Jan 30, 2018·2 cites·21 claims
- 1775US12457765B2Normally-off transistor with reduced on-state resistance and manufacturing methodST MICROELECTRONICS SRL·Filed 2022·Granted Oct 28, 2025·0 cites·18 claims
- 1875US2025095998A1Method for manufacturing a gate terminal of a hemt device, and hemt deviceST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 1974US2025040164A1Method for manufacturing an ohmic contact for a hemt deviceST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 2073US11862707B2HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2021·Granted Jan 2, 2024·0 cites·15 claims
- 2172US12154967B2Method for manufacturing an ohmic contact for a HEMT deviceST MICROELECTRONICS SRL·Filed 2019·Granted Nov 26, 2024·1 cites·18 claims
- 2272US12062715B2HEMT transistor with adjusted gate-source distance, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2022·Granted Aug 13, 2024·0 cites·19 claims
- 2371US12278283B2HEMT transistor including an improved gate region and related manufacturing processST MICROELECTRONICS SRL·Filed 2023·Granted Apr 15, 2025·0 cites·18 claims
- 2471US10396192B2HEMT transistors with improved electron mobilityST MICROELECTRONICS SRL·Filed 2018·Granted Aug 27, 2019·1 cites·19 claims
- 2570US10032898B2Method for manufacturing a HEMT transistor and HEMT transistor with improved electron mobilityST MICROELECTRONICS SRL·Filed 2017·Granted Jul 24, 2018·1 cites·20 claims
- 2670US2024162153A1Gan-based, lateral-conduction, electronic device with improved metallic layers layoutST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 2769US11699748B2Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2021·Granted Jul 11, 2023·0 cites·16 claims
- 2865US11101363B2HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2019·Granted Aug 24, 2021·0 cites·14 claims
- 2965US10892357B2Double-channel HEMT device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2019·Granted Jan 12, 2021·0 cites·20 claims
- 3063US11728404B2Method of manufacturing a HEMT device with reduced gate leakage current, and HEMT deviceST MICROELECTRONICS SRL·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 3163US11538922B2Manufacturing method of an HEMT transistor of the normally off type with reduced resistance in the on state and HEMT transistorST MICROELECTRONICS SRL·Filed 2020·Granted Dec 27, 2022·0 cites·18 claims
- 3263US11038047B2Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2020·Granted Jun 15, 2021·0 cites·20 claims
- 3363US2025212439A1Semiconductor device based on heterostructure having a back contact region and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 3461US2024404945A1Hemt power device with reduced gate oscillation and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 3560US12165871B2Method for manufacturing a gate terminal of a HEMT device, and HEMT deviceST MICROELECTRONICS SRL·Filed 2020·Granted Dec 10, 2024·0 cites·18 claims
- 3660US2024405115A1Hemt device having an improved conductivity and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 3759US2024304710A1Hemt device having improved on-state performance and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 3859US2024304711A1Hemt device having a reduced on-resistance and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 3958US10411123B2High-power and high-frequency heretostructure field-effect transistorST MICROELECTRONICS SRL·Filed 2018·Granted Sep 10, 2019·0 cites·23 claims
- 4058US2024313102A1Normally-off heterojunction integrated device and method for manufacturing an integrated deviceST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 4158US2025142862A1Normally-on gan hemt integration on monolithic p-gan integrated circuitsST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 4258US2024304713A1Hemt device having a reduced gate leakage and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 4358US2024332413A1Hemt device having an improved gate structure and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 4458US2024194763A1Hemt transistorST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 4558US2025142864A1In situ plasma treatment before al2o3 deposition for improved ronST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 4658US2024266425A1Hemt transistorST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 4757US11799025B2HEMT transistor including an improved gate region and related manufacturing processST MICROELECTRONICS SRL·Filed 2019·Granted Oct 24, 2023·0 cites·17 claims
- 4857US2025142865A1Isolation of p-gan hemt by use of gate ringST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 4957US2024274702A1Hemt transistorST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 5056US2025366136A1Normally-off hemt device with improved dynamic performances, and manufacturing method thereofST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →