Inventor · disambiguated record
Fengyuan Lai
Also filed as: LAI FENGYUAN
9 granted patents·1 pending application·119 citations·filing 2012–2022
88Inventor score
Top patents by PatentIndex Score
10 records- 0197US9837270B1Densification of silicon carbide film using remote plasma treatmentLAM RES CORP·Filed 2016·Granted Dec 5, 2017·62 cites·19 claims
- 0296US11365479B2Ex situ coating of chamber components for semiconductor processingLAM RES CORP·Filed 2020·Granted Jun 21, 2022·8 cites·16 claims
- 0396US10297442B2Remote plasma based deposition of graded or multi-layered silicon carbide filmLAM RES CORP·Filed 2016·Granted May 21, 2019·22 cites·20 claims
- 0494US12227837B2Ex situ coating of chamber components for semiconductor processingLAM RES CORP·Filed 2022·Granted Feb 18, 2025·2 cites·19 claims
- 0594US10760158B2Ex situ coating of chamber components for semiconductor processingLAM RES CORP·Filed 2018·Granted Sep 1, 2020·14 cites·23 claims
- 0687US11761079B2Oxidation resistant protective layer in chamber conditioningLAM RES CORP·Filed 2018·Granted Sep 19, 2023·5 cites·14 claims
- 0780US9045674B2High thermal conductance thermal interface materials based on nanostructured metallic network-polymer compositesIRUVANTI SUSHUMNA·Filed 2012·Granted Jun 2, 2015·5 cites·19 claims
- 0879US12163219B2Ex situ coating of chamber components for semiconductor processingLAM RES CORP·Filed 2022·Granted Dec 10, 2024·0 cites·19 claims
- 0969US9512291B2High thermal conductance thermal interface materials based on nanostructured metallic network-polymer compositesIBM·Filed 2015·Granted Dec 6, 2016·1 cites·19 claims
- 1045US2022235463A1SixNy AS A NUCLEATION LAYER FOR SiCxOyLAM RES CORP·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →