Inventor · disambiguated record
Fred N. Hause
Also filed as: HAUSE FRED · HAUSE FRED N
141 granted patents·2 pending applications·5,173 citations·filing 1994–2009
99Inventor score
Files withADVANCED MICRO DEVICES INC131GLOBALFOUNDRIES INC2T RAM SEMICONDUCTOR INC2ADVANCED MICRO DEVCIES INC1ADVANCED MICRO SERVICES1
Top patents by PatentIndex Score
143 records- 0198US6225168B1Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereofADVANCED MICRO DEVICES INC·Filed 1998·Granted May 1, 2001·239 cites·20 claims
- 0298US6080640AMetal attachment method and structure for attaching substrates at low temperaturesADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 27, 2000·291 cites·17 claims
- 0398US5905285AUltra short trench transistors and process for making sameADVANCED MICRO DEVICES INC·Filed 1998·Granted May 18, 1999·188 cites·8 claims
- 0498US5850105ASubstantially planar semiconductor topography using dielectrics and chemical mechanical polishADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 15, 1998·278 cites·10 claims
- 0597US5770483AMulti-level transistor fabrication method with high performance drain-to-gate connectionADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 23, 1998·256 cites·18 claims
- 0695US5793090AIntegrated circuit having multiple LDD and/or source/drain implant steps to enhance circuit performanceADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 11, 1998·123 cites·18 claims
- 0794US7741663B2Air gap spacer formationGLOBALFOUNDRIES INC·Filed 2008·Granted Jun 22, 2010·57 cites·20 claims
- 0894US5953626ADissolvable dielectric methodADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 14, 1999·160 cites·12 claims
- 0993US5759913AMethod of formation of an air gap within a semiconductor dielectric by solvent desorptionADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 2, 1998·148 cites·17 claims
- 1092US6097096AMetal attachment method and structure for attaching substrates at low temperaturesADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 1, 2000·116 cites·9 claims
- 1192US5837572ACMOS integrated circuit formed by using removable spacers to produce asymmetrical NMOS junctions before asymmetrical PMOS junctions for optimizing thermal diffusivity of dopants implanted thereinADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 17, 1998·103 cites·21 claims
- 1292US5827776AMethod of making an integrated circuit which uses an etch stop for producing staggered interconnect linesADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 27, 1998·139 cites·14 claims
- 1391US6967160B1Method of manufacturing semiconductor device having nickel silicide with reduced interface roughnessADVANCED MICRO DEVICES INC·Filed 2005·Granted Nov 22, 2005·18 cites·14 claims
- 1490US5981354ASemiconductor fabrication employing a flowable oxide to enhance planarization in a shallow trench isolation processADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 9, 1999·110 cites·11 claims
- 1590US5882993AIntegrated circuit with differing gate oxide thickness and process for making sameADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 16, 1999·73 cites·19 claims
- 1690US5811347ANitrogenated trench liner for improved shallow trench isolationADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 22, 1998·105 cites·13 claims
- 1789US5882973AMethod for forming an integrated circuit having transistors of dissimilarly graded junction profilesADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 16, 1999·83 cites·16 claims
- 1888US5792706AInterlevel dielectric with air gaps to reduce permitivityADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 11, 1998·96 cites·20 claims
- 1988US5789298AHigh performance mosfet structure having asymmetrical spacer formation and method of making the sameADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 4, 1998·67 cites·10 claims
- 2087US5783864AMultilevel interconnect structure of an integrated circuit having air gaps and pillars separating levels of interconnectADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 21, 1998·78 cites·5 claims
- 2186US5793089AGraded MOS transistor junction formed by aligning a sequence of implants to a selectively removable polysilicon sidewall space and oxide thermally grown thereonADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 11, 1998·82 cites·6 claims
- 2285US6137182AMethod of reducing via and contact dimensions beyond photolithography equipment limitsADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 24, 2000·67 cites·11 claims
- 2384US6888176B1Thyrister semiconductor deviceT RAM INC·Filed 2003·Granted May 3, 2005·33 cites·18 claims
- 2484US6107129AIntegrated circuit having multiple LDD and/or source/drain implant steps to enhance circuit performanceADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 22, 2000·50 cites·18 claims
- 2584US5814555AInterlevel dielectric with air gaps to lessen capacitive couplingADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 29, 1998·63 cites·11 claims
- 2683US7279367B1Method of manufacturing a thyristor semiconductor deviceT RAM SEMICONDUCTOR INC·Filed 2004·Granted Oct 9, 2007·27 cites·39 claims
- 2783US6118137ATest structure responsive to electrical signals for determining lithographic misalignment of conductors relative to viasADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 12, 2000·70 cites·17 claims
- 2883US5926713AMethod for achieving global planarization by forming minimum mesas in large field areasADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 20, 1999·69 cites·26 claims
- 2983US5786256AMethod of reducing MOS transistor gate beyond photolithographically patterned dimensionADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 28, 1998·55 cites·18 claims
- 3081US6208015B1Interlevel dielectric with air gaps to lessen capacitive couplingADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 27, 2001·51 cites·21 claims
- 3181US5899727AMethod of making a semiconductor isolation region bounded by a trench and covered with an oxide to improve planarizationADVANCED MICRO DEVICES INC·Filed 1996·Granted May 4, 1999·56 cites·18 claims
- 3280US5963783AIn-line detection and assessment of net charge in PECVD silicon dioxide (oxide) layersADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 5, 1999·52 cites·11 claims
- 3380US5895955AMOS transistor employing a removable, dual layer etch stop to protect implant regions from sidewall spacer overetchADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 20, 1999·46 cites·24 claims
- 3478US5998293AMultilevel interconnect structure of an integrated circuit having air gaps and pillars separating levels of interconnectADVANCED MICRO DEVCIES INC·Filed 1998·Granted Dec 7, 1999·54 cites·11 claims
- 3576US6376330B1Dielectric having an air gap formed between closely spaced interconnect linesADVANCED MICRO DEVICES INC·Filed 1996·Granted Apr 23, 2002·48 cites·13 claims
- 3676US6013574AMethod of forming low resistance contact structures in vias arranged between two levels of interconnect linesADVANCED MICRO DEVICES INC·Filed 1997·Granted Jan 11, 2000·54 cites·18 claims
- 3776US5851921ASemiconductor device and method for forming the device using a dual layer, self-aligned silicide to enhance contact performanceADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 22, 1998·37 cites·20 claims
- 3875US5679585AMethod for forming metal silicide on a semiconductor surface with minimal effect on pre-existing implantsADVANCED MICRO DEVICES INC·Filed 1996·Granted Oct 21, 1997·37 cites·24 claims
- 3974US6661061B1Integrated circuit with differing gate oxide thicknessADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 9, 2003·29 cites·15 claims
- 4073US6091149ADissolvable dielectric method and structureADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 18, 2000·37 cites·6 claims
- 4173US5918130ATransistor fabrication employing formation of silicide across source and drain regions prior to formation of the gate conductorADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 29, 1999·33 cites·11 claims
- 4272US5926717AMethod of making an integrated circuit with oxidizable trench linerADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 20, 1999·41 cites·25 claims
- 4371US5846876AIntegrated circuit which uses a damascene process for producing staggered interconnect linesADVANCED MICRO DEVICES INC·Filed 1996·Granted Dec 8, 1998·35 cites·9 claims
- 4470US6184566B1Method and structure for isolating semiconductor devices after transistor formationADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 6, 2001·25 cites·19 claims
- 4570US5955785ACopper-containing plug for connection of semiconductor surface with overlying conductorADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 21, 1999·32 cites·12 claims
- 4670US5949126ATrench isolation structure employing protective sidewall spacers upon exposed surfaces of the isolation trenchADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 7, 1999·37 cites·6 claims
- 4770US5916715AProcess of using electrical signals for determining lithographic misalignment of vias relative to electrically active elementsADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 29, 1999·25 cites·4 claims
- 4870US5841168AHigh performance asymmetrical MOSFET structure and method of making the sameADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 24, 1998·26 cites·13 claims
- 4969US5770517ASemiconductor fabrication employing copper plug formation within a contact areaADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 23, 1998·30 cites·16 claims
- 5067US6873051B1Nickel silicide with reduced interface roughnessADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 29, 2005·11 cites·5 claims
Showing the top 50 of 143 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →