Inventor · disambiguated record
Franz Hirler
Also filed as: HIRLER FRANZ
383 granted patents·53 pending applications·2,498 citations·filing 1998–2025
99Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG123INFINEON TECHNOLOGIES AUSTRIA106INFINEON TECHNOLOGIES AG89HIRLER FRANZ46MAUDER ANTON13
Top patents by PatentIndex Score
436 records- 0199US8569842B2Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devicesWEIS ROLF·Filed 2011·Granted Oct 29, 2013·83 cites·30 claims
- 0297US8970262B2Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devicesWEIS ROLF·Filed 2012·Granted Mar 3, 2015·28 cites·25 claims
- 0397US8022474B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Sep 20, 2011·34 cites·17 claims
- 0496US9373700B2Field plate trench transistor and method for producing itINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted Jun 21, 2016·9 cites·20 claims
- 0596US6690062B2Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitanceINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 10, 2004·119 cites·20 claims
- 0696US6465843B1MOS-transistor structure with a trench-gate-electrode and a limited specific turn-on resistance and method for producing an MOS-transistor structureINFINEON TECHNOLOGIES AG·Filed 2000·Granted Oct 15, 2002·132 cites·19 claims
- 0795US11323099B2Electronic circuit with a transistor device and a biasing circuitINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted May 3, 2022·4 cites·24 claims
- 0895US7858478B2Method for producing an integrated circuit including a trench transistor and integrated circuitINFINEON TECHNOLOGIES AUSTRIA·Filed 2010·Granted Dec 28, 2010·20 cites·3 claims
- 0995US7005351B2Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configurationINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 28, 2006·113 cites·28 claims
- 1094US8247865B2Semiconductor structure, method for operating a semiconductor structure and method for producing a semiconductor structureHIRLER FRANZ·Filed 2006·Granted Aug 21, 2012·32 cites·61 claims
- 1194US8080858B2Semiconductor component having a space saving edge structureHIRLER FRANZ·Filed 2007·Granted Dec 20, 2011·32 cites·11 claims
- 1293US9368617B2Superjunction device and semiconductor structure comprising the sameINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Jun 14, 2016·13 cites·4 claims
- 1393US8618598B2Power MOSFET semiconductor deviceHAEBERLEN OLIVER·Filed 2011·Granted Dec 31, 2013·12 cites·5 claims
- 1493US8314447B2Semiconductor including lateral HEMTHIRLER FRANZ·Filed 2010·Granted Nov 20, 2012·14 cites·9 claims
- 1593US7655975B2Power trench transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 2, 2010·25 cites·18 claims
- 1693US7459365B2Method for fabricating a semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 2, 2008·29 cites·32 claims
- 1793US6833584B2Trench power semiconductorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 21, 2004·96 cites·8 claims
- 1893US6806533B2Semiconductor component with an increased breakdown voltage in the edge areaINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 19, 2004·83 cites·10 claims
- 1993US6388287B2Switch mode power supply with reduced switching lossesINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 14, 2002·81 cites·5 claims
- 2092US8907408B2Stress-reduced field-effect semiconductor device and method for forming thereforSEDLMAIER STEFAN·Filed 2012·Granted Dec 9, 2014·15 cites·19 claims
- 2192US8847311B2Semiconductor device and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2012·Granted Sep 30, 2014·11 cites·19 claims
- 2292US7777278B2Lateral semiconductor component with a drift zone having at least one field electrodeINFINEON TECHNOLOGIES AG·Filed 2008·Granted Aug 17, 2010·22 cites·20 claims
- 2392US6998678B2Semiconductor arrangement with a MOS-transistor and a parallel Schottky-diodeINFINEON TECHNOLOGIES AG·Filed 2002·Granted Feb 14, 2006·69 cites·22 claims
- 2491US9793391B2Power MOSFET semiconductorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Oct 17, 2017·5 cites·6 claims
- 2591US9620636B2Semiconductor device with field electrode structures in a cell area and termination structures in an edge areaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Apr 11, 2017·8 cites·17 claims
- 2691US9257549B2Semiconductor field effect power switching deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Feb 9, 2016·8 cites·25 claims
- 2791US9024383B2Semiconductor device with a super junction structure with one, two or more pairs of compensation layersINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted May 5, 2015·11 cites·18 claims
- 2891US8466492B1Semiconductor device with edge termination structureMAUDER ANTON·Filed 2012·Granted Jun 18, 2013·12 cites·24 claims
- 2991US8022470B2Semiconductor device with a trench gate structure and method for the production thereofINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Sep 20, 2011·19 cites·23 claims
- 3091US7893486B2Field plate trench transistor and method for producing itINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Granted Feb 22, 2011·12 cites·7 claims
- 3191US7436023B2High blocking semiconductor component comprising a drift sectionINFINEON TECHNOLOGIES AG·Filed 2006·Granted Oct 14, 2008·20 cites·49 claims
- 3291US7414286B2Trench transistor and method for fabricating a trench transistorINFINEON TECHNOLOGIES AG·Filed 2006·Granted Aug 19, 2008·18 cites·15 claims
- 3391US7091573B2Power transistorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 15, 2006·62 cites·8 claims
- 3491US6720616B2Trench MOS transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 13, 2004·75 cites·9 claims
- 3590US8866221B2Super junction semiconductor device comprising a cell area and an edge areaHIRLER FRANZ·Filed 2012·Granted Oct 21, 2014·12 cites·26 claims
- 3690US8854065B2Current measurement in a power transistorMAUDER ANTON·Filed 2012·Granted Oct 7, 2014·12 cites·29 claims
- 3790US8541837B2Semiconductor field effect power switching deviceHIRLER FRANZ·Filed 2012·Granted Sep 24, 2013·8 cites·11 claims
- 3890US8334564B2Field plate trench transistor and method for producing itHIRLER FRANZ·Filed 2011·Granted Dec 18, 2012·8 cites·7 claims
- 3990US7851349B2Method for producing a connection electrode for two semiconductor zones arranged one above anotherINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 14, 2010·15 cites·11 claims
- 4090US7372103B2MOS field plate trench transistor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted May 13, 2008·18 cites·23 claims
- 4190US6891223B2Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cellINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 10, 2005·52 cites·16 claims
- 4289US10084038B2Semiconductor device with drift zone and backside emitter and method of manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Sep 25, 2018·6 cites·10 claims
- 4389US8779509B2Semiconductor device including an edge area and method of manufacturing a semiconductor deviceSCHULZE HANS-JOACHIM·Filed 2012·Granted Jul 15, 2014·7 cites·15 claims
- 4489US8742539B2Semiconductor component and method for producing a semiconductor componentWEYERS JOACHIM·Filed 2012·Granted Jun 3, 2014·14 cites·27 claims
- 4589US8203181B2Trench MOSFET semiconductor device and manufacturing method thereforHIRLER FRANZ·Filed 2009·Granted Jun 19, 2012·11 cites·15 claims
- 4689US7868363B2Semiconductor component arrangement comprising a trench transistorINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jan 11, 2011·18 cites·5 claims
- 4789US7709891B2Component arrangement including a power semiconductor component having a drift control zoneINFINEON TECHNOLOGIES AG·Filed 2008·Granted May 4, 2010·16 cites·22 claims
- 4889US7582531B2Method for producing a buried semiconductor layerINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Sep 1, 2009·15 cites·13 claims
- 4988US11462620B2Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Oct 4, 2022·1 cites·20 claims
- 5088US11211483B2Method for forming an insulation layer in a semiconductor body and transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 28, 2021·4 cites·23 claims
Showing the top 50 of 436 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →