Inventor · disambiguated record
Franz Hofmann
Also filed as: HOFMANN FRANZ
128 granted patents·30 pending applications·4,023 citations·filing 1976–2021
99Inventor score
Top patents by PatentIndex Score
158 records- 0199US6707098B2Electronic device and method for fabricating an electronic deviceINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 16, 2004·295 cites·18 claims
- 0299US6180979B1Memory cell arrangement with vertical MOS transistors and the production process thereofSIEMENS AG·Filed 1997·Granted Jan 30, 2001·534 cites·3 claims
- 0397US7915667B2Integrated circuits having a contact region and methods for manufacturing the sameQIMONDA AG·Filed 2008·Granted Mar 29, 2011·491 cites·20 claims
- 0497US7772580B2Integrated circuit having a cell with a resistivity changing layerQIMONDA AG·Filed 2007·Granted Aug 10, 2010·64 cites·30 claims
- 0597US7208794B2High-density NROM-FINFETINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 24, 2007·93 cites·19 claims
- 0697US6111267ACMOS integrated circuit including forming doped wells, a layer of intrinsic silicon, a stressed silicon germanium layer where germanium is between 25 and 50%, and another intrinsic silicon layerSIEMENS AG·Filed 1998·Granted Aug 29, 2000·216 cites·1 claims
- 0797US5994746AMemory cell configuration and method for its fabricationSIEMENS AG·Filed 1999·Granted Nov 30, 1999·191 cites·13 claims
- 0895US6734063B2Non-volatile memory cell and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 11, 2004·77 cites·16 claims
- 0995US5710072AMethod of producing and arrangement containing self-amplifying dynamic MOS transistor memory cellsSIEMENS AG·Filed 1995·Granted Jan 20, 1998·145 cites·10 claims
- 1094US5959328AElectrically programmable memory cell arrangement and method for its manufactureSIEMENS AG·Filed 1997·Granted Sep 28, 1999·102 cites·11 claims
- 1192US7692246B2Production method for a FinFET transistor arrangement, and corresponding FinFET transistor arrangementINFINEON TECHNOLOGIES AG·Filed 2007·Granted Apr 6, 2010·29 cites·1 claims
- 1292US7352018B2Non-volatile memory cells and methods for fabricating non-volatile memory cellsINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 1, 2008·29 cites·32 claims
- 1392US6673677B2Method for manufacturing a multi-bit memory cellINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 6, 2004·55 cites·3 claims
- 1492US6229169B1Memory cell configuration, method for fabricating it and methods for operating itINFINEON TECHNOLOGIES AG·Filed 1998·Granted May 8, 2001·100 cites·10 claims
- 1591US7719059B2Fin field effect transistor arrangement and method for producing a fin field effect transistor arrangementINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 18, 2010·23 cites·17 claims
- 1691US6191459B1Electrically programmable memory cell array, using charge carrier traps and insulation trenchesINFINEON TECHNOLOGIES AG·Filed 1997·Granted Feb 20, 2001·103 cites·6 claims
- 1790US7838925B2Integrated circuit including a vertical transistor and methodQIMONDA AG·Filed 2008·Granted Nov 23, 2010·14 cites·15 claims
- 1890US7075148B2Semiconductor memory with vertical memory transistors in a cell array arrangement with 1-2F2 cellsINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jul 11, 2006·20 cites·21 claims
- 1990US5973373ARead-only-memory cell arrangement using vertical MOS transistors and gate dielectrics of different thicknesses and method for its productionSIEMENS AG·Filed 1995·Granted Oct 26, 1999·73 cites·17 claims
- 2089US7714377B2Integrated circuits and methods of manufacturing thereofQIMONDA AG·Filed 2007·Granted May 11, 2010·19 cites·35 claims
- 2188US7411822B2Nonvolatile memory cell arrangementINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 12, 2008·22 cites·19 claims
- 2288US6566193B2Method for producing a cell of a semiconductor memoryINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 20, 2003·38 cites·9 claims
- 2387US6349052B1DRAM cell arrangement and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2000·Granted Feb 19, 2002·43 cites·4 claims
- 2487US6180458B1Method of producing a memory cell configurationINFINEON TECHNOLOGIES AG·Filed 1998·Granted Jan 30, 2001·48 cites·9 claims
- 2587US6118159AElectrically programmable memory cell configurationSIEMENS AG·Filed 1999·Granted Sep 12, 2000·66 cites·3 claims
- 2687US4274360AApparatus for regenerating used foundry sandFISCHER AG GEORG·Filed 1979·Granted Jun 23, 1981·21 cites·3 claims
- 2786US6316315B1Method for fabricating a memory cell having a MOS transistorINFINEON TECHNOLOGIES AG·Filed 2000·Granted Nov 13, 2001·39 cites·6 claims
- 2886US5998261AMethod of producing a read-only storage cell arrangementSIEMENS AG·Filed 1996·Granted Dec 7, 1999·58 cites·4 claims
- 2984US7368752B2DRAM memory cellINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 6, 2008·27 cites·13 claims
- 3084US5821591AHigh density read only memory cell configuration and method for its productionSIEMENS AG·Filed 1997·Granted Oct 13, 1998·42 cites·10 claims
- 3183US7344923B2NROM semiconductor memory device and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 18, 2008·11 cites·5 claims
- 3283US6362502B1DRAM cell circuitINFINEON TECHNOLOGIES AG·Filed 2000·Granted Mar 26, 2002·35 cites·7 claims
- 3383US5443992AMethod for manufacturing an integrated circuit having at least one MOS transistorSIEMENS AG·Filed 1994·Granted Aug 22, 1995·54 cites·10 claims
- 3482US6352894B1Method of forming DRAM cell arrangementSIEMENS AG·Filed 2000·Granted Mar 5, 2002·25 cites·3 claims
- 3582US6274453B1Memory cell configuration and production process thereforSIEMENS AG·Filed 1999·Granted Aug 14, 2001·43 cites·6 claims
- 3680US5736761ADRAM cell arrangement and method for its manufactureSIEMENS AG·Filed 1996·Granted Apr 7, 1998·41 cites·13 claims
- 3779US6576948B2Integrated circuit configuration and method for manufacturing itINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 10, 2003·20 cites·9 claims
- 3879US6255684B1DRAM cell configuration and method for its productionINFINEON TECHNOLOGIES AG·Filed 1998·Granted Jul 3, 2001·33 cites·7 claims
- 3976US6448600B1DRAM cell configuration and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 10, 2002·16 cites·20 claims
- 4075US7778073B2Integrated circuit having NAND memory cell stringsQIMONDA AG·Filed 2007·Granted Aug 17, 2010·9 cites·18 claims
- 4175US7560351B2Integrated circuit arrangement with low-resistance contacts and method for production thereofINFINEON TECHNOLOGIES AG·Filed 2006·Granted Jul 14, 2009·6 cites·17 claims
- 4275US7298004B2Charge-trapping memory cell and method for productionINFINEON TECHNOLOGIES AG·Filed 2004·Granted Nov 20, 2007·20 cites·23 claims
- 4374US11549642B2Vehicle having a storage assembly for storing and dispensing a pressurised gas, and storage assembly for a vehicleAUDI AG·Filed 2019·Granted Jan 10, 2023·2 cites·24 claims
- 4474US6040995AMethod of operating a storage cell arrangementSIEMENS AG·Filed 1997·Granted Mar 21, 2000·35 cites·4 claims
- 4573US7265376B2Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cellINFINEON TECHNOLOGIES INC·Filed 2003·Granted Sep 4, 2007·19 cites·26 claims
- 4673US6750095B1Integrated circuit with vertical transistorsINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jun 15, 2004·35 cites·10 claims
- 4773US6639269B1Electrically programmable memory cell configuration and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2000·Granted Oct 28, 2003·19 cites·17 claims
- 4871US7154138B2Transistor-arrangement, method for operating a transistor arrangement as a data storage element and method for producing a transistor-arrangementINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 26, 2006·16 cites·6 claims
- 4971US6438022B2Memory cell configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 20, 2002·18 cites·7 claims
- 5070US6977413B2Bar-type field effect transistor and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 20, 2005·15 cites·10 claims
Showing the top 50 of 158 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →