Inventor · disambiguated record
Francois Pagette
Also filed as: PAGETTE FRANCOIS
29 granted patents·3 pending applications·203 citations·filing 2003–2012
96Inventor score
Top patents by PatentIndex Score
32 records- 0188US7253096B2Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming sameIBM·Filed 2005·Granted Aug 7, 2007·11 cites·7 claims
- 0287US6861186B1Method for backside alignment of photo-processes using standard front side alignment toolsIBM·Filed 2003·Granted Mar 1, 2005·28 cites·19 claims
- 0384US7679164B2Bipolar transistor with silicided sub-collectorIBM·Filed 2007·Granted Mar 16, 2010·9 cites·25 claims
- 0484US7622357B2Semiconductor device structures with backside contacts for improved heat dissipation and reduced parasitic resistanceIBM·Filed 2006·Granted Nov 24, 2009·13 cites·6 claims
- 0584US7087940B2Structure and method of forming bipolar transistor having a self-aligned raised extrinsic base using self-aligned etch stop layerIBM·Filed 2004·Granted Aug 8, 2006·31 cites·20 claims
- 0683US7960096B2Sublithographic patterning method incorporating a self-aligned single mask processIBM·Filed 2008·Granted Jun 14, 2011·8 cites·18 claims
- 0778US8405127B2Method and apparatus for fabricating a heterojunction bipolar transistorCHU JACK O·Filed 2008·Granted Mar 26, 2013·7 cites·20 claims
- 0878US7002221B2Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming sameIBM·Filed 2003·Granted Feb 21, 2006·17 cites·17 claims
- 0977US8003473B2Bipolar transistor with silicided sub-collectorIBM·Filed 2009·Granted Aug 23, 2011·5 cites·15 claims
- 1076US8759213B2Buried metal-semiconductor alloy layers and structures and methods for fabrication thereofLAVOIE CHRISTIAN·Filed 2012·Granted Jun 24, 2014·3 cites·10 claims
- 1175US7611953B2Bipolar transistor with isolation and direct contactsIBM·Filed 2007·Granted Nov 3, 2009·5 cites·8 claims
- 1274US7390720B2Local collector implant structure for heterojunction bipolar transistors and method of forming the sameIBM·Filed 2006·Granted Jun 24, 2008·3 cites·5 claims
- 1372US7294869B2Silicon germanium emitterIBM·Filed 2006·Granted Nov 13, 2007·4 cites·10 claims
- 1472US6960820B2Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming sameIBM·Filed 2003·Granted Nov 1, 2005·14 cites·17 claims
- 1569US7180157B2Bipolar transistor with a very narrow emitter featureIBM·Filed 2004·Granted Feb 20, 2007·12 cites·20 claims
- 1668US7732292B2Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicideIBM·Filed 2007·Granted Jun 8, 2010·3 cites·21 claims
- 1768US7611954B2Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming sameIBM·Filed 2005·Granted Nov 3, 2009·3 cites·11 claims
- 1866US7952165B2Heterojunction bipolar transistor (HBT) with self-aligned sub-lithographic metal-semiconductor alloy base contactsIBM·Filed 2007·Granted May 31, 2011·3 cites·15 claims
- 1966US7217988B2Bipolar transistor with isolation and direct contactsIBM·Filed 2004·Granted May 15, 2007·10 cites·13 claims
- 2064US7566921B2Silicon germanium emitterIBM·Filed 2007·Granted Jul 28, 2009·2 cites·4 claims
- 2161US6858485B2Method for creation of a very narrow emitter featureIBM·Filed 2003·Granted Feb 22, 2005·8 cites·17 claims
- 2260US8791572B2Buried metal-semiconductor alloy layers and structures and methods for fabrication thereofLAVOIE CHRISTIAN·Filed 2007·Granted Jul 29, 2014·1 cites·12 claims
- 2357US7473610B2Local collector implant structure for heterojunction bipolar transistors and method of forming the sameIBM·Filed 2008·Granted Jan 6, 2009·0 cites·7 claims
- 2456US7388237B2Local collector implant structure for heterojunction bipolar transistorsIBM·Filed 2007·Granted Jun 17, 2008·0 cites·18 claims
- 2555US8357953B2Bipolar transistor with low resistance base contactIBM·Filed 2009·Granted Jan 22, 2013·0 cites·15 claims
- 2653US8981430B2Bipolar transistor with low resistance base contact and method of making the sameIBM·Filed 2012·Granted Mar 17, 2015·0 cites·19 claims
- 2750US2009065804A1Bipolar transistor with low resistance base contact and method of making the sameIBM·Filed 2007·Application pending·0 cites
- 2849US7394113B2Self-alignment scheme for a heterojunction bipolar transistorIBM·Filed 2006·Granted Jul 1, 2008·0 cites·7 claims
- 2949US7288829B2Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicideIBM·Filed 2004·Granted Oct 30, 2007·3 cites·14 claims
- 3049US2009140297A1Self-alignment scheme for a heterojunction bipolar transistorIBM·Filed 2008·Application pending·0 cites
- 3146US2008305437A1Multi-layer mask method for patterned structure ethcingIBM·Filed 2007·Application pending·0 cites
- 3243US7585740B2Fully silicided extrinsic base transistorIBM·Filed 2006·Granted Sep 8, 2009·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →