Inventor · disambiguated record

Francisco Javier Santos Rodriguez

Also filed as: SANTOS RODRIGUEZ FRANCISCO JAVIER

105 granted patents·20 pending applications·145 citations·filing 2007–2025

99Inventor score

Technology areasH10P H10W H10D C03B H01L

Files withINFINEON TECHNOLOGIES AG104 INFINEON TECHNOLOGIES AUSTRIA AG5 INFINEON TECHNOLOGIES AUSTRIA3 INFINEON TECHNOLOGIES DRESDEN GMBH3 BREYMESSER ALEXANDER2

Top patents by PatentIndex Score

125 records

0195US8222681B2Bipolar semiconductor device and manufacturing methodSCHULZE HANS-JOACHIM·Filed 2011·Granted Jul 17, 2012·20 cites·4 claims
0294US11081393B2Method for splitting semiconductor wafersINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 3, 2021·7 cites·29 claims
0391US11031483B2Forming semiconductor devices in silicon carbideINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 8, 2021·4 cites·24 claims
0490US10854739B2Method for producing IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Dec 1, 2020·2 cites·22 claims
0589US11476111B2Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Oct 18, 2022·2 cites·13 claims
0689US11211459B2Semiconductor device and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Dec 28, 2021·5 cites·14 claims
0789US10615272B2Method for producing IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 7, 2020·4 cites·15 claims
0889US9685504B2Semiconductor to metal transition for semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jun 20, 2017·6 cites·17 claims
0988US9704750B2Method for forming a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jul 11, 2017·5 cites·20 claims
1088US8853774B2Semiconductor device including trenches and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2012·Granted Oct 7, 2014·14 cites·25 claims
1187US11887894B2Methods for processing a wide band gap semiconductor wafer using a support layer and methods for forming a plurality of thin wide band gap semiconductor wafers using support layersINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 30, 2024·1 cites·21 claims
1287US11742215B2Methods for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 29, 2023·1 cites·16 claims
1387US9443971B2Semiconductor to metal transitionINFINEON TECHNOLOGIES AG·Filed 2015·Granted Sep 13, 2016·5 cites·20 claims
1484US12412740B2Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
1584US12272738B2Methods of forming semiconductor devices in a layer of epitaxial silicon carbideINFINEON TECHNOLOGIES AG·Filed 2023·Granted Apr 8, 2025·0 cites·19 claims
1683US10615040B2Superjunction structure in a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Apr 7, 2020·3 cites·11 claims
1783US9929181B2Method for manufacturing an electronic device and method for operating an electronic deviceINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2016·Granted Mar 27, 2018·3 cites·5 claims
1882US12034066B2Power semiconductor device having a barrier regionINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
1982US11581428B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 14, 2023·1 cites·19 claims
2082US11107732B2Methods for processing a wide band gap semiconductor wafer, methods for forming a plurality of thin wide band gap semiconductor wafers, and wide band gap semiconductor wafersINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 31, 2021·2 cites·19 claims
2182US9570542B2Semiconductor device including a vertical edge termination structure and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 14, 2017·4 cites·15 claims
2281US2025280591A1Semiconductor wafer splitting methodINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
2380US10978418B2Method of forming an electrical contact and method of forming a chip package with a metal contact structure and protective layerINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 13, 2021·2 cites·20 claims
2480US10170497B2Method for manufacturing an electronic device and method for operating an electronic deviceINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2018·Granted Jan 1, 2019·2 cites·12 claims
2580US2025194125A1Methods of Semiconductor Device Fabrication Involving Porous Silicon CarbideINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
2679US10276656B2Method of manufacturing semiconductor devices by using epitaxy and semiconductor devices with a lateral structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 30, 2019·2 cites·18 claims
2778US10461056B2Chip package and method of forming a chip package with a metal contact structure and protective layer, and method of forming an electrical contactINFINEON TECHNOLOGIES AG·Filed 2017·Granted Oct 29, 2019·2 cites·7 claims
2878US10112861B2Method of manufacturing a plurality of glass members, a method of manufacturing an optical member, and array of glass members in a glass substrateINFINEON TECHNOLOGIES AG·Filed 2015·Granted Oct 30, 2018·1 cites·21 claims
2978US9601376B2Semiconductor device and method of manufacturing a semiconductor device having a glass piece and a single-crystalline semiconductor portionINFINEON TECHNOLOGIES AG·Filed 2015·Granted Mar 21, 2017·2 cites·23 claims
3077US12211703B2Methods for forming a semiconductor device having a second semiconductor layer on a first semiconductor layerINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jan 28, 2025·0 cites·19 claims
3177US11881397B2Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jan 23, 2024·0 cites·20 claims
3277US10020226B2Method for forming a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 10, 2018·2 cites·20 claims
3377US9917333B2Lithium ion battery, integrated circuit and method of manufacturing a lithium ion batteryINFINEON TECHNOLOGIES AG·Filed 2014·Granted Mar 13, 2018·2 cites·20 claims
3476US11735642B2Methods of re-using a silicon carbide substrateINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 22, 2023·0 cites·19 claims
3575US11881406B2Method of manufacturing a semiconductor device and semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jan 23, 2024·0 cites·20 claims
3675US11094779B2Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity typeINFINEON TECHNOLOGIES AG·Filed 2017·Granted Aug 17, 2021·2 cites·1 claims
3775US9793167B2Method for forming a wafer structure, a method for forming a semiconductor device and a wafer structureINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 17, 2017·2 cites·15 claims
3875US8841768B2Chip package and a method for manufacturing a chip packageVON KOBLINSKI CARSTEN·Filed 2012·Granted Sep 23, 2014·5 cites·26 claims
3975US8710678B2Device and method including a soldering processGANITZER PAUL·Filed 2012·Granted Apr 29, 2014·4 cites·12 claims
4075US2025331246A1Semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
4174US9219020B2Semiconductor device, wafer assembly and methods of manufacturing wafer assemblies and semiconductor devicesBREYMESSER ALEXANDER·Filed 2012·Granted Dec 22, 2015·3 cites·24 claims
4274US8822310B2Method, apparatus for holding and treatment of a substrateINFINEON TECHNOLOGIES AG·Filed 2013·Granted Sep 2, 2014·2 cites·19 claims
4373US10840362B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Nov 17, 2020·1 cites·16 claims
4473US9589880B2Method for processing a wafer and wafer structureINFINEON TECHNOLOGIES AG·Filed 2013·Granted Mar 7, 2017·3 cites·26 claims
4573US9560765B2Electronic device, a method for manufacturing an electronic device, and a method for operating an electronic deviceINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2013·Granted Jan 31, 2017·2 cites·20 claims
4672US12512321B2Method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Granted Dec 30, 2025·0 cites·17 claims
4771US12356700B2Method for splitting semiconductor wafersINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jul 8, 2025·0 cites·15 claims
4871US10529612B2Method for processing one semiconductor wafer or a plurality of semiconductor wafers and protective cover for covering the semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 7, 2020·1 cites·21 claims
4971US10256097B2Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structureINFINEON TECHNOLOGIES AG·Filed 2017·Granted Apr 9, 2019·1 cites·15 claims
5071US9981844B2Method of manufacturing semiconductor device with glass piecesBREYMESSER ALEXANDER·Filed 2012·Granted May 29, 2018·3 cites·6 claims

Showing the top 50 of 125 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →