Inventor · disambiguated record
Fu-Chen Chang
Also filed as: CHANG FU-CHEN
38 granted patents·18 pending applications·45 citations·filing 2003–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD55
Top patents by PatentIndex Score
56 records- 0197US12041861B2RRAM bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 16, 2024·2 cites·20 claims
- 0297US11611038B2Method for forming RRAM with a barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 21, 2023·3 cites·20 claims
- 0394US11706930B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·2 cites·20 claims
- 0494US11296099B2FeRAM decoupling capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·3 cites·20 claims
- 0591US11367658B2Semiconductor die singulation and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 21, 2022·2 cites·20 claims
- 0691US11183503B2Memory cell having top and bottom electrodes defining recessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·5 cites·20 claims
- 0789US12356875B2RRAM bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 0888US11800720B2Memory cell having a top electrode interconnect arranged laterally from a recessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·1 cites·20 claims
- 0988US10950784B2RRAM with a barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·2 cites·20 claims
- 1087US10535554B2Semiconductor die having edge with multiple gradients and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 14, 2020·3 cites·20 claims
- 1186US2025311647A1Rram bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1284US2025324610A1Ferroelectric memory device with leakage barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1384US2025048647A1FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCHTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1483US11189788B2RRAM bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 30, 2021·2 cites·20 claims
- 1583US10510605B2Semiconductor die singulation and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·2 cites·19 claims
- 1683US2024363398A1Semiconductor die having edge with multiple gradientsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1782US12167611B2FeRAM MFM structure with selective electrode etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 1880US12356630B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 1980US12082421B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 2080US10720360B2Semiconductor die singulation and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 21, 2020·2 cites·20 claims
- 2179US2024373645A1Feram decoupling capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2279US2024365561A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2377US11227872B2FeRAM MFM structure with selective electrode etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·1 cites·20 claims
- 2477US2025351374A1Ferroelectric memory device with blocking layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2576US2025318142A1Interfacial layer with high texture uniformity for ferroelectric layer enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2675US11785777B2FeRAM MFM structure with selective electrode etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
- 2774US12432929B2Ferroelectric memory device with blocking layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 2874US12114509B2FeRAM decoupling capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 2974US2024389350A1Mfm device with an enhanced bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3073US12087618B2Method for forming semiconductor die having edge with multiple gradientsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 10, 2024·0 cites·20 claims
- 3173US12040019B2Methods for enlarging the memory window and improving data retention in resistive memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
- 3273US11849588B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 3373US2024357833A1METHOD AND STRUCTURES PERTAINING TO IMPROVED FERROELECTRIC RANDOM-ACCESS MEMORY (FeRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3471US12369327B2MFM device with an enhanced bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 3570US12457751B2Interfacial layer with high texture uniformity for ferroelectric layer enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 28, 2025·0 cites·20 claims
- 3670US12171104B2Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 3770US11004728B2Semiconductor die having edge with multiple gradients and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 11, 2021·0 cites·20 claims
- 3870US2024363155A1Method for efficiently waking up ferroelectric memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3968US12238934B2Method of fabricating semiconductor device comprising ferroelectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 25, 2025·0 cites·20 claims
- 4066US11856788B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 4166US6824505B1Buffer of a damping mechanism of an exercise machineFiled 2003·Granted Nov 30, 2004·15 cites·1 claims
- 4266US2025324608A1Method of fabricating semiconductor device comprising ferroelectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4365US11682456B2Methods for enlarging the memory window and improving data retention in restistive memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·0 cites·20 claims
- 4465US2025351749A1Semiconductor memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4564US11296116B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 5, 2022·0 cites·19 claims
- 4663US2023262991A1Ferroelectric memory device with leakage barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4760US12057154B2Method for efficiently waking up ferroelectric memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 6, 2024·0 cites·20 claims
- 4857US2025228148A1Resistive memory device, semiconductor device including the same, and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4956US11723213B2Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 5055US11557609B2Integrated circuit structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 17, 2023·0 cites·20 claims
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →