Inventor · disambiguated record
Fu-Hsin Chen
Also filed as: CHEN FU H · CHEN FU-HSIN
39 granted patents·18 pending applications·266 citations·filing 1995–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG18LEXTAR ELECTRONICS CORP16VANGUARD INT SEMICONDUCT CORP14REALTEK SEMICONDUCTOR CORP4TIEN WILLIAM WEI-YUAN3
Top patents by PatentIndex Score
57 records- 0195US11588078B2Light emitting device and moduleLEXTAR ELECTRONICS CORP·Filed 2020·Granted Feb 21, 2023·4 cites·18 claims
- 0293US6924531B2LDMOS device with isolation guard ringsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 2, 2005·81 cites·13 claims
- 0391US10256332B1High hole mobility transistorVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Apr 9, 2019·8 cites·13 claims
- 0488US8174071B2High voltage LDMOS transistorTIEN WILLIAM WEI-YUAN·Filed 2008·Granted May 8, 2012·30 cites·20 claims
- 0588US7960786B2Breakdown voltages of ultra-high voltage devices by forming tunnelsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jun 14, 2011·17 cites·20 claims
- 0686US8389341B2Lateral power MOSFET with high breakdown voltage and low on-resistanceHUANG TSUNG-YI·Filed 2011·Granted Mar 5, 2013·8 cites·14 claims
- 0784US7508032B2High voltage device with low on-resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 24, 2009·13 cites·18 claims
- 0883US7768071B2Stabilizing breakdown voltages by forming tunnels for ultra-high voltage devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 3, 2010·9 cites·19 claims
- 0981US10262997B2High-voltage LDMOSFET devices having polysilicon trench-type guard ringsVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Apr 16, 2019·4 cites·16 claims
- 1081US7525155B2High voltage transistor structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 28, 2009·8 cites·19 claims
- 1179US11294238B1Low blue light backlight moduleLEXTAR ELECTRONICS CORP·Filed 2020·Granted Apr 5, 2022·1 cites·18 claims
- 1278US7247909B2Method for forming an integrated circuit with high voltage and low voltage devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 24, 2007·7 cites·9 claims
- 1377US7989890B2Lateral power MOSFET with high breakdown voltage and low on-resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 2, 2011·6 cites·19 claims
- 1476US2025393378A1Optical substrate, display device and preparation method of display deviceLEXTAR ELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1574US2025393372A1Optoelectronic semiconductor componentsLEXTAR ELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1673US7888216B2Method of fabricating a high performance power MOSTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 15, 2011·3 cites·20 claims
- 1771US12431476B2Pixel package, method for forming the same, and display device using the sameLEXTAR ELECTRONICS CORP·Filed 2022·Granted Sep 30, 2025·0 cites·15 claims
- 1871US11357145B2Picking apparatus capable of picking up target micro-elementsLEXTAR ELECTRONICS CORP·Filed 2019·Granted Jun 7, 2022·1 cites·10 claims
- 1970US12463077B2Method of manufacturing display deviceLEXTAR ELECTRONICS CORP·Filed 2021·Granted Nov 4, 2025·0 cites·12 claims
- 2070US10692857B2Semiconductor device combining passive components with HEMTVANGUARD INT SEMICONDUCT CORP·Filed 2018·Granted Jun 23, 2020·1 cites·11 claims
- 2169US12008260B2Method of storage space management for improving endurance of storage devicesREALTEK SEMICONDUCTOR CORP·Filed 2023·Granted Jun 11, 2024·0 cites·6 claims
- 2265US7723785B2High performance power MOS structureTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 25, 2010·2 cites·18 claims
- 2364US7994580B2High voltage transistor with improved driving currentTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Aug 9, 2011·3 cites·16 claims
- 2464US7196375B2High-voltage MOS transistorTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 27, 2007·11 cites·18 claims
- 2563US8268691B2High voltage transistor with improved driving currentTIEN WILLIAM WEI-YUAN·Filed 2011·Granted Sep 18, 2012·2 cites·17 claims
- 2663US7868422B2MOS device with a high voltage isolation structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 11, 2011·3 cites·11 claims
- 2762US5615580ABicycle gear selector mechanismFiled 1995·Granted Apr 1, 1997·23 cites·6 claims
- 2862US2025331354A1Hybrid encapsulation film and method of manufacturing light-emitting device using the sameLEXTAR ELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 2961US7045414B2Method of fabricating high voltage transistorTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted May 16, 2006·8 cites·18 claims
- 3060US7525150B2High voltage double diffused drain MOS transistor with medium operation voltageTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 28, 2009·9 cites·11 claims
- 3159US10867993B2Touch sensing circuits and methods for detecting touch eventsVANGUARD INT SEMICONDUCT CORP·Filed 2020·Granted Dec 15, 2020·0 cites·4 claims
- 3257US8138559B2Recessed drift region for HVMOS breakdown improvementTIEN WILLIAM WEI-YUAN·Filed 2007·Granted Mar 20, 2012·2 cites·20 claims
- 3357US2021271410A1Method of storage space managementREALTEK SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 3456US7183171B2Pyramid-shaped capacitor structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 27, 2007·2 cites·14 claims
- 3556US2025169249A1Light-emitting device and display device including the sameLEXTAR ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 3656US2025160079A1Light source module and manufacturing method thereofLEXTAR ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 3754US2025374596A1Semiconductor device and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2024·Application pending·0 cites
- 3852US11476133B2Picking apparatus with heating element and temperature-controlled adhesive and the method of using the sameLEXTAR ELECTRONICS CORP·Filed 2019·Granted Oct 18, 2022·0 cites·8 claims
- 3952US2025374595A1Semiconductor device and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2024·Application pending·0 cites
- 4052US2025374627A1Semiconductor device and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2024·Application pending·0 cites
- 4150US2024429315A1Semiconductor device and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2023·Application pending·0 cites
- 4250US2025176210A1Semiconductor device and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2023·Application pending·0 cites
- 4348US2024266391A1Semiconductor device and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2023·Application pending·0 cites
- 4448US2025006834A1Semiconductor device and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2023·Application pending·0 cites
- 4548US2024178315A1Semiconductor device and methods for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2022·Application pending·0 cites
- 4647US10720555B2Light emitting diode device and manufacturing method thereofLEXTAR ELECTRONICS CORP·Filed 2018·Granted Jul 21, 2020·0 cites·9 claims
- 4746US11469352B2Display device and manufacturing method thereofLEXTAR ELECTRONICS CORP·Filed 2019·Granted Oct 11, 2022·0 cites·7 claims
- 4846US10679974B2Display device having multiple pixels in a substrate grooveLEXTAR ELECTRONICS CORP·Filed 2018·Granted Jun 9, 2020·0 cites·17 claims
- 4945US11302678B2Light-emitting package structureLEXTAR ELECTRONICS CORP·Filed 2019·Granted Apr 12, 2022·0 cites·8 claims
- 5045US2024170544A1Semiconductor structure and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2022·Application pending·0 cites
Showing the top 50 of 57 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →