Inventor · disambiguated record
Fu-Che Lee
Also filed as: Lee Fu-Che
104 granted patents·6 pending applications·162 citations·filing 2016–2023
99Inventor score
Top patents by PatentIndex Score
110 records- 0196US10043809B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 7, 2018·17 cites·8 claims
- 0294US10354876B1Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jul 16, 2019·10 cites·20 claims
- 0394US10186513B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jan 22, 2019·9 cites·8 claims
- 0493US10475794B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 12, 2019·17 cites·14 claims
- 0593US10217750B1Buried word line structure and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 26, 2019·9 cites·4 claims
- 0692US10373957B2Capacitor structure and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 6, 2019·6 cites·12 claims
- 0792US10147728B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Dec 4, 2018·8 cites·14 claims
- 0891US10366993B2Semiconductor structure having air gap between gate electrode and distal end portion of active areaUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jul 30, 2019·6 cites·9 claims
- 0991US10312088B1Self-aligned double patterning methodUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 4, 2019·7 cites·10 claims
- 1089US10170362B2Semiconductor memory device with bit line contact structure and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 1, 2019·5 cites·7 claims
- 1187US10784334B2Method of manufacturing a capacitorUNITED MICROELECTRONICS CORP·Filed 2018·Granted Sep 22, 2020·4 cites·10 claims
- 1287US10147726B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Dec 4, 2018·4 cites·13 claims
- 1386US10431679B2Semiconductor device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Oct 1, 2019·3 cites·8 claims
- 1485US11903181B2Semiconductor structure and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Feb 13, 2024·1 cites·14 claims
- 1585US10854613B2Buried word line of a dynamic random access memory and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Dec 1, 2020·2 cites·5 claims
- 1685US10497704B2Buried word line structure and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Dec 3, 2019·3 cites·9 claims
- 1785US10249629B1Method for forming buried word linesUNITED MICROELECTRONICS CORP·Filed 2018·Granted Apr 2, 2019·4 cites·14 claims
- 1883US10347644B2Manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jul 9, 2019·3 cites·11 claims
- 1983US10312090B2Patterning methodUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 4, 2019·3 cites·16 claims
- 2083US10153165B1Patterning methodUNITED MICROELECTRONICS CORP·Filed 2018·Granted Dec 11, 2018·3 cites·10 claims
- 2182US12272646B2Semiconductor memory deviceUNITED MICROELECTRONICS CORP·Filed 2023·Granted Apr 8, 2025·0 cites·8 claims
- 2281US10818664B2Method of forming semiconductor memory deviceUNITED MICROELECTRONICS CORP·Filed 2019·Granted Oct 27, 2020·2 cites·12 claims
- 2380US12396152B2Semiconductor structure and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·20 claims
- 2480US10777559B1Semiconductor memory device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2019·Granted Sep 15, 2020·3 cites·18 claims
- 2580US10381239B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 13, 2019·2 cites·10 claims
- 2679US11107879B2Capacitor structure and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 31, 2021·3 cites·18 claims
- 2778US11233057B2Semiconductor structure and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jan 25, 2022·2 cites·11 claims
- 2878US10795255B2Method of forming layout definition of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Oct 6, 2020·2 cites·14 claims
- 2978US10593677B2Semiconductor structure with capacitor landing pad and method of make the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Mar 17, 2020·2 cites·7 claims
- 3076US10529719B2Semiconductor structure and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jan 7, 2020·2 cites·8 claims
- 3176US10381306B2Semiconductor memory device and a manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 13, 2019·1 cites·4 claims
- 3276US10332887B2Buried word line of a dynamic random access memory and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jun 25, 2019·1 cites·6 claims
- 3375US11769727B2Semiconductor memory deviceUNITED MICROELECTRONICS CORP·Filed 2021·Granted Sep 26, 2023·0 cites·13 claims
- 3475US10861857B2Method of making a capacitor electrode of a memory device having alternately stacked oxides and nitrides over a sacrificial layerUNITED MICROELECTRONICS CORP·Filed 2018·Granted Dec 8, 2020·1 cites·13 claims
- 3574US10032631B1Method of fabricating mask patternUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jul 24, 2018·2 cites·9 claims
- 3673US11367725B2Buried word line of a dynamic random access memory and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jun 21, 2022·0 cites·10 claims
- 3773US10062700B2Semiconductor storage device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 28, 2018·2 cites·11 claims
- 3872US10825818B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 3, 2020·1 cites·9 claims
- 3972US10619266B2Semiconductor structure and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 14, 2020·0 cites·8 claims
- 4072US10559651B2Method of forming memory capacitorUNITED MICROELECTRONICS CORP·Filed 2018·Granted Feb 11, 2020·1 cites·9 claims
- 4172US10366889B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jul 30, 2019·1 cites·16 claims
- 4272US10103019B1Manufacturing method for forming a semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Oct 16, 2018·1 cites·16 claims
- 4371US11721552B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2021·Granted Aug 8, 2023·0 cites·7 claims
- 4471US10840182B2Method of forming semiconductor memory device with bit line contact structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 17, 2020·1 cites·13 claims
- 4571US10700071B1Method for forming semiconductor patternUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jun 30, 2020·1 cites·16 claims
- 4671US10418367B2Method for fabricating air gap adjacent to two sides of bit lineUNITED MICROELECTRONICS CORP·Filed 2018·Granted Sep 17, 2019·1 cites·20 claims
- 4771US10347642B2Manufacturing method of semiconductor memory deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jul 9, 2019·1 cites·11 claims
- 4871US10043812B1Semiconductive structure with word line and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 7, 2018·1 cites·9 claims
- 4970US10361080B2Patterning methodUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jul 23, 2019·1 cites·13 claims
- 5069US10658366B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted May 19, 2020·1 cites·19 claims
Showing the top 50 of 110 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →