Inventor · disambiguated record
Fukuo Ogawa
Also filed as: OGAWA FUKUO
25 granted patents·4 pending applications·38 citations·filing 2007–2025
93Inventor score
Top patents by PatentIndex Score
29 records- 0194US10233564B2Manufacturing method of monocrystalline silicon and monocrystalline siliconSUMCO CORP·Filed 2017·Granted Mar 19, 2019·5 cites·9 claims
- 0286US8518180B2Silicon single crystal pull-up apparatus having a sliding sample tubeNARUSHIMA YASUHITO·Filed 2009·Granted Aug 27, 2013·6 cites·14 claims
- 0385US8574363B2Process for production of silicon single crystal, and highly doped N-type semiconductor substrateKAWAZOE SHINICHI·Filed 2008·Granted Nov 5, 2013·5 cites·2 claims
- 0481US8852340B2Method for manufacturing single crystalSUMCO TECHXIV CORP·Filed 2013·Granted Oct 7, 2014·1 cites·5 claims
- 0580US8580032B2Method for manufacturing single crystalNARUSHIMA YASUHITO·Filed 2008·Granted Nov 12, 2013·3 cites·5 claims
- 0679US8283241B2Dopant implanting method and doping apparatusNARUSHIMA YASUHITO·Filed 2008·Granted Oct 9, 2012·3 cites·6 claims
- 0778US12252803B2N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon waferSUMCO CORP·Filed 2023·Granted Mar 18, 2025·0 cites·3 claims
- 0878US10233562B2Method for producing single crystal, and method for producing silicon waferSUMCO TECHXIV CORP·Filed 2014·Granted Mar 19, 2019·1 cites·8 claims
- 0978US9074298B2Processes for production of silicon ingot, silicon wafer and epitaxial wafer, and silicon ingotKAWAZOE SHINICHI·Filed 2009·Granted Jul 7, 2015·3 cites·17 claims
- 1078US8535439B2Manufacturing method for silicon single crystalNARUSHIMA YASUHITO·Filed 2010·Granted Sep 17, 2013·1 cites·30 claims
- 1172US2025179682A1N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon waferSUMCO CORP·Filed 2025·Application pending·0 cites
- 1270US8043428B2Process for production of silicon single crystalSUMCO TECHXIV CORP·Filed 2008·Granted Oct 25, 2011·1 cites·3 claims
- 1368US8961686B2Method of manufacturing monocrystal, flow straightening cylinder, and monocrystal pulling-up deviceKAWAZOE SHINICHI·Filed 2008·Granted Feb 24, 2015·1 cites·6 claims
- 1468US8747551B2Process for production of silicon single crystal, and highly doped N-type semiconductor substrateSUMCO TECHXIV CORP·Filed 2013·Granted Jun 10, 2014·0 cites·2 claims
- 1567US10916425B2Method for manufacturing silicon single crystal, flow straightening member, and single crystal pulling deviceSUMCO CORP·Filed 2017·Granted Feb 9, 2021·1 cites·8 claims
- 1665US2024068126A1Method of manufacturing monocrystalline siliconSUMCO CORP·Filed 2023·Application pending·0 cites
- 1763US8888911B2Method of producing single crystal siliconUTO MASAYUKI·Filed 2010·Granted Nov 18, 2014·4 cites·9 claims
- 1859US8840721B2Method of manufacturing silicon single crystalNARUSHIMA YASUHITO·Filed 2010·Granted Sep 23, 2014·1 cites·7 claims
- 1958US11702760B2N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon waferSUMCO CORP·Filed 2018·Granted Jul 18, 2023·0 cites·3 claims
- 2058US11639560B2Deposit removing device and deposit removing methodSUMCO CORP·Filed 2020·Granted May 2, 2023·0 cites·6 claims
- 2155US8920561B2Silicon single crystal pull-up apparatus that pulls a doped silicon single crystal from a meltNARUSHIMA YASUHITO·Filed 2009·Granted Dec 30, 2014·1 cites·5 claims
- 2253US9212431B2Silicon single crystal pulling device and graphite member used thereinKAWAZOE SHINICHI·Filed 2007·Granted Dec 15, 2015·0 cites·8 claims
- 2351US10294583B2Producing method and apparatus of silicon single crystal, and silicon single crystal ingotNARUSHIMA YASUHITO·Filed 2008·Granted May 21, 2019·1 cites·6 claims
- 2450US11377755B2N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon waferSUMCO CORP·Filed 2018·Granted Jul 5, 2022·0 cites·2 claims
- 2549US11242617B2Method for producing silicon single crystalSUMCO CORP·Filed 2017·Granted Feb 8, 2022·0 cites·6 claims
- 2648US2009145350A1Method of injecting dopant gasSUMCO TECHXIV CORP·Filed 2007·Application pending·0 cites
- 2743US8715416B2Doping apparatus for simultaneously injecting two dopants into a semiconductor melt at different positions and method for manufacturing silicon single crystal using the doping apparatusNARUSHIMA YASUHITO·Filed 2008·Granted May 6, 2014·0 cites·6 claims
- 2838US2020135460A1Single crystal silicon production method, epitaxial silicon wafer production method, single crystal silicon, and epitaxial silicon waferSUMCO CORP·Filed 2018·Application pending·0 cites
- 2937US8110042B2Method for manufacturing single crystalNARUSHIMA YASUHITO·Filed 2008·Granted Feb 7, 2012·0 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →