Inventor · disambiguated record
Fumitaka Sugaya
Also filed as: SUGAYA FUMITAKA
12 granted patents·1 pending application·117 citations·filing 1995–2019
90Inventor score
Top patents by PatentIndex Score
13 records- 0172US5780893ANon-volatile semiconductor memory device including memory transistor with a composite gate structureNIPPON STEEL CORP·Filed 1996·Granted Jul 14, 1998·31 cites·38 claims
- 0264US6482692B2Method of manufacturing a semiconductor device, having first and second semiconductor regions with field shield isolation structures and a field oxide film covering a junction between semiconductor regionsNIPPON STEEL CORP·Filed 2000·Granted Nov 19, 2002·9 cites·2 claims
- 0364US6201275B1Semiconductor device having semiconductor regions of different conductivity types isolated by field oxide, and method of manufacturing the sameNIPPON STEEL CORP·Filed 1996·Granted Mar 13, 2001·23 cites·21 claims
- 0459US6288423B1Composite gate structure memory cell having increased capacitanceNIPPON STEEL CORP·Filed 1998·Granted Sep 11, 2001·15 cites·24 claims
- 0556US5796149ASemiconductor memory using different concentration impurity diffused layersNIPPON STEEL CORP·Filed 1995·Granted Aug 18, 1998·17 cites·12 claims
- 0655US6232182B1Non-volatile semiconductor memory device including memory transistor with a composite gate structure and method of manufacturing the sameNIPPON STEEL CORP·Filed 1998·Granted May 15, 2001·15 cites·20 claims
- 0748US10879268B2Storage deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2018·Granted Dec 29, 2020·0 cites·13 claims
- 0844US6844268B1Method for fabricating a semiconductor storage device having an increased dielectric film areaNIPPON STEEL CORP·Filed 1999·Granted Jan 18, 2005·7 cites·13 claims
- 0942US12141546B2Product-sum calculation device and product-sum calculation methodSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2019·Granted Nov 12, 2024·0 cites·14 claims
- 1042USRE42004EMethod for fabricating a semiconductor storage device having an increased dielectric film areaSUGAYA FUMITAKA·Filed 2007·Granted Dec 21, 2010·0 cites·33 claims
- 1140US6656781B2Method of manufacturing a semiconductor device, having first and second semiconductor regions with field shield isolation structures and a field oxide film covering a junction between semiconductor regionsNIPPON STEEL CORP·Filed 2002·Granted Dec 2, 2003·0 cites·2 claims
- 1240US2021013219A1Semiconductor storage device and multiplier-accumulatorSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2019·Application pending·0 cites
- 1339US6486013B2Method of manufacturing a semiconductor device having regions of different conductivity types isolated by field oxideNIPPON STEEL CORP·Filed 2001·Granted Nov 26, 2002·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →