Inventor · disambiguated record
Fu-Ting Sung
Also filed as: SUNG FU-TING
61 granted patents·17 pending applications·279 citations·filing 2011–2025
98Inventor score
Top patents by PatentIndex Score
78 records- 0198US8872149B1RRAM structure and process using composite spacerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 28, 2014·61 cites·20 claims
- 0297US11581484B2Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·2 cites·20 claims
- 0397US9711713B1Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·14 cites·18 claims
- 0497US9543511B2RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 10, 2017·22 cites·20 claims
- 0597US9209392B1RRAM cell with bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 8, 2015·33 cites·20 claims
- 0696US10510952B2Storage device with composite spacer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·10 cites·20 claims
- 0796US10454021B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 22, 2019·12 cites·19 claims
- 0896US9196825B2Reversed stack MTJTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 24, 2015·13 cites·20 claims
- 0996US9040951B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 26, 2015·13 cites·16 claims
- 1095US9178144B1RRAM cell with bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 3, 2015·25 cites·20 claims
- 1193US12218005B2Integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 4, 2025·1 cites·20 claims
- 1293US10529916B2Reversed stack MTJTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 7, 2020·6 cites·20 claims
- 1391US11800822B2Memory device with composite spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·1 cites·20 claims
- 1491US9837605B2Memory cell having resistance variable film and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 5, 2017·6 cites·23 claims
- 1591US2025329351A1Trench formation scheme for programmable metallization cell to prevent metal redepositTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1690US9614145B2Reversed stack MTJTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·5 cites·20 claims
- 1789US10720568B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 21, 2020·3 cites·19 claims
- 1889US10158069B2Memory cell having resistance variable film and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·4 cites·20 claims
- 1988US10164184B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·3 cites·20 claims
- 2088US9806254B2Storage device with composite spacer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 31, 2017·4 cites·18 claims
- 2186US12225829B2Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 2286US11050021B2Method for manufacturing resistive random access memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 29, 2021·3 cites·19 claims
- 2385US11227993B2Device with composite spacer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·2 cites·20 claims
- 2484US12245528B2Memory device with composite spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 2584US9172033B2MRAM device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 27, 2015·4 cites·20 claims
- 2683US10468587B2Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 5, 2019·2 cites·20 claims
- 2782US9564448B2Flash memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·2 cites·20 claims
- 2882US9306158B2MRAM device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Apr 5, 2016·3 cites·20 claims
- 2982US8313959B1Hole first hardmask definitionHUANG WEI-HANG·Filed 2011·Granted Nov 20, 2012·6 cites·13 claims
- 3082US2025366380A1Rram with post-patterned treated memory films and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3181US11637240B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 25, 2023·1 cites·20 claims
- 3281US9356231B2MRAM device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 31, 2016·3 cites·20 claims
- 3381US2024023460A1Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3480US2025140608A1Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3580US2025169384A1Memory device with composite spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3679US12354695B2Trench formation scheme for programmable metallization cell to prevent metal redepositTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 3779US11950523B2Memory device, memory integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 3879US2024215463A1Memory device, memory integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3979US2025143190A1Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4077US2025359072A1Phase-change device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4176US10516107B2Memory cell having resistance variable film and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·1 cites·20 claims
- 4276US9876169B2RRAM devices and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 23, 2018·4 cites·20 claims
- 4376US8569849B2Hole first hardmask definitionHUANG WEI-HANG·Filed 2012·Granted Oct 29, 2013·4 cites·20 claims
- 4475US11342379B2Trench formation scheme for programmable metallization cell to prevent metal redepositTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 24, 2022·2 cites·20 claims
- 4575US11258007B2Reversed stack MTJTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
- 4675US2024381792A1In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4774US12507602B2RRAM with post-patterned treated memory films to provide improved endurance characteristics and methods for formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 23, 2025·0 cites·20 claims
- 4874US12161057B2Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 4974US11785861B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 5074US2025318448A1Encapsulated phase change material switch and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 78 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →