Inventor · disambiguated record
Fumiaki Toyama
Also filed as: TOYAMA FUMIAKI
64 granted patents·3 pending applications·1,099 citations·filing 2008–2024
99Inventor score
Files withSANDISK TECHNOLOGIES LLC41SANDISK TECHNOLOGIES INC14SPANSION LLC5TOYAMA FUMIAKI4WESTERN DIGITAL TECH INC3
Top patents by PatentIndex Score
67 records- 0199US10510738B2Three-dimensional memory device having support-die-assisted source power distribution and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 17, 2019·104 cites·20 claims
- 0298US11791327B2Three-dimensional memory device having support-die-assisted source power distribution and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Oct 17, 2023·4 cites·14 claims
- 0398US11404123B1Non-volatile memory with multiple wells for word line switch transistorsSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 2, 2022·6 cites·20 claims
- 0498US11342244B2Bonded assembly of semiconductor dies containing pad level across-die metal wiring and method of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 24, 2022·7 cites·20 claims
- 0598US11081443B1Multi-tier three-dimensional memory device containing dielectric well structures for contact via structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 3, 2021·29 cites·20 claims
- 0698US10381371B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 13, 2019·38 cites·10 claims
- 0798US10319680B1Metal contact via structure surrounded by an air gap and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jun 11, 2019·35 cites·20 claims
- 0898US9922987B1Three-dimensional memory device containing separately formed drain select transistors and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 20, 2018·99 cites·24 claims
- 0998US9859422B2Field effect transistor with elevated active regions and methods of manufacturing the sameSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 2, 2018·32 cites·12 claims
- 1098US9818693B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 14, 2017·57 cites·20 claims
- 1198US9806093B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 31, 2017·83 cites·25 claims
- 1298US9721663B1Word line decoder circuitry under a three-dimensional memory arraySANDISK TECHNOLOGIES INC·Filed 2016·Granted Aug 1, 2017·55 cites·33 claims
- 1398US9620512B1Field effect transistor with a multilevel gate electrode for integration with a multilevel memory deviceSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 11, 2017·64 cites·14 claims
- 1498US9412749B1Three dimensional memory device having well contact pillar and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Aug 9, 2016·77 cites·31 claims
- 1598US9224747B2Vertical NAND device with shared word line stepsSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 29, 2015·67 cites·6 claims
- 1697US11211370B2Bonded assembly with vertical power and control signal connection adjacent to sense amplifier regions and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 28, 2021·7 cites·9 claims
- 1797US10256248B2Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 9, 2019·42 cites·25 claims
- 1897US9929174B1Three-dimensional memory device having non-uniform spacing among memory stack structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Mar 27, 2018·38 cites·26 claims
- 1996US11424207B1Non-volatile memory with different use of metal lines in word line hook up regionsSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 23, 2022·4 cites·20 claims
- 2096US10872899B2Three-dimensional memory device including signal and power connection lines extending through dielectric regions and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 22, 2020·17 cites·20 claims
- 2196US10861873B2Three-dimensional memory device including signal and power connection lines extending through dielectric regions and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 8, 2020·23 cites·20 claims
- 2296US10840260B2Through-array conductive via structures for a three-dimensional memory device and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Nov 17, 2020·16 cites·18 claims
- 2395US11139237B2Three-dimensional memory device containing horizontal and vertical word line interconnections and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 5, 2021·17 cites·6 claims
- 2495US11114459B2Three-dimensional memory device containing width-modulated connection strips and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 7, 2021·15 cites·23 claims
- 2595US9768186B2Three dimensional memory device having well contact pillar and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Sep 19, 2017·16 cites·17 claims
- 2694US9922716B2Architecture for CMOS under arraySANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 20, 2018·40 cites·23 claims
- 2793US11943922B1Non-volatile memory with three dimensional stacked word line switchesWESTERN DIGITAL TECH INC·Filed 2023·Granted Mar 26, 2024·1 cites·20 claims
- 2893US11792988B2Three-dimensional memory device with separated contact regions and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Oct 17, 2023·2 cites·15 claims
- 2993US9142305B2System to reduce stress on word line select transistor during erase operationSANDISK TECHNOLOGIES INC·Filed 2013·Granted Sep 22, 2015·21 cites·29 claims
- 3092US12004348B2Three-dimensional memory array with dual-level peripheral circuits and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jun 4, 2024·2 cites·19 claims
- 3192US11973044B2Non-volatile memory with efficient signal routingSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 30, 2024·2 cites·19 claims
- 3292US11758730B2Bonded assembly of a memory die and a logic die including laterally shifted bit-line bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Sep 12, 2023·2 cites·19 claims
- 3392US11011209B2Three-dimensional memory device including contact-level bit-line-connection structures and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 18, 2021·8 cites·20 claims
- 3492US10658381B1Memory die having wafer warpage reduction through stress balancing employing rotated three-dimensional memory arrays and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 19, 2020·12 cites·5 claims
- 3591US11728305B2Capacitor structure including bonding pads as electrodes and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 15, 2023·2 cites·14 claims
- 3689US11133297B2Three-dimensional memory device having support-die-assisted source power distribution and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 28, 2021·4 cites·11 claims
- 3788US9224744B1Wide and narrow patterning using common processSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 29, 2015·14 cites·11 claims
- 3885US8917554B2Back-biasing word line switch transistorsTOYAMA FUMIAKI·Filed 2011·Granted Dec 23, 2014·10 cites·11 claims
- 3984US11817150B2Non-volatile memory with different word line hook up regions based on pass through signalsSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Nov 14, 2023·1 cites·20 claims
- 4081US10580787B2Three-dimensional memory device containing dummy antenna diodesSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Mar 3, 2020·3 cites·12 claims
- 4180US9312015B1Methods for reducing body effect and increasing junction breakdown voltageSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 12, 2016·5 cites·20 claims
- 4276US11251191B2Three-dimensional memory device containing multiple size drain contact via structures and method of making sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 15, 2022·3 cites·20 claims
- 4375US9449701B1Non-volatile storage systems and methodsSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 20, 2016·4 cites·22 claims
- 4467US10991429B2Word line decoder circuitry under a three-dimensional memory arraySANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 27, 2021·0 cites·1 claims
- 4565US7956424B2Mirror bit memory device applying a gate voltage alternately to gateSPANSION LLC·Filed 2008·Granted Jun 7, 2011·2 cites·10 claims
- 4662US8988917B2Bit line resistance compensationSANDISK TECHNOLOGIES INC·Filed 2013·Granted Mar 24, 2015·2 cites·21 claims
- 4762US2025275146A1Apparatus and methods for reducing number of layout tracks for sense amplifiersWESTERN DIGITAL TECH INC·Filed 2024·Application pending·0 cites
- 4861US9208889B2Non-volatile memory including bit line switch transistors formed in a triple-wellSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 8, 2015·2 cites·22 claims
- 4959US11894056B2Non-volatile memory with efficient word line hook-upSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 5059US9245898B2NAND flash memory integrated circuits and processes with controlled gate heightSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 26, 2016·1 cites·10 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →