Inventor · disambiguated record
Fu-Huan Tsai
Also filed as: TSAI FU-HUAN
32 granted patents·3 pending applications·16 citations·filing 2013–2025
95Inventor score
Top patents by PatentIndex Score
35 records- 0197US11990474B2Method of making a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 21, 2024·3 cites·20 claims
- 0292US2025366089A1Circuit Structure and Method for Reducing Electronic NoisesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0388US10522535B2FinFET varactor with low threshold voltage and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·3 cites·20 claims
- 0484US10741553B2Method of making a high speed semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 11, 2020·2 cites·20 claims
- 0583US11063559B2High-implant channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 13, 2021·3 cites·23 claims
- 0681US12464787B2Circuit structure and method for reducing electronic noisesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 0781US11552076B2Method of making a semiconductor device, semiconductor device and ring oscillatorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 10, 2023·1 cites·18 claims
- 0881US9947701B2Low noise device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 17, 2018·2 cites·20 claims
- 0979US12356684B2Semiconductor structure having asymmetric source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 1079US2025301734A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1178US12191811B2High-implant channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 1278US10991687B2FinFET varactor with low threshold voltage and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·1 cites·20 claims
- 1374US11830889B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·0 cites·20 claims
- 1474US11532614B2FinFET varactor with low threshold voltage and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 1573US11646312B2Buried channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·0 cites·20 claims
- 1672US11605709B2Circuit structure and method for reducing electronic noisesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 14, 2023·0 cites·20 claims
- 1771US10431582B2High speed semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 1, 2019·1 cites·20 claims
- 1870US11094723B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 17, 2021·0 cites·20 claims
- 1970US11011556B2Method of making a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·0 cites·20 claims
- 2069US11791773B2High-implant channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 2167US11094694B2Buried channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·0 cites·20 claims
- 2267US11088136B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·0 cites·19 claims
- 2366US11855145B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 2461US10868116B2Circuit structure and method for reducing electronic noisesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 2561US10535686B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·0 cites·20 claims
- 2660US10622351B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 14, 2020·0 cites·20 claims
- 2759US10991688B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 27, 2021·0 cites·20 claims
- 2859US10529711B2Buried channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 7, 2020·0 cites·20 claims
- 2959US10522534B2FinFET varactor with low threshold voltage and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 31, 2019·0 cites·20 claims
- 3057US10157916B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·0 cites·16 claims
- 3155US9761584B2Buried channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 12, 2017·0 cites·19 claims
- 3253US9653542B2FinFET having isolation structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 16, 2017·0 cites·19 claims
- 3353US2025335676A1Design method for decreasing random telegraph noise (rtn) in circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3452US10141429B2FinFET having isolation structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·0 cites·20 claims
- 3548US9337269B2Buried-channel FinFET device and methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 10, 2016·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →