Inventor · disambiguated record
Fumitoshi Yamamoto
Also filed as: YAMAMOTO FUMITOSHI
18 granted patents·6 pending applications·176 citations·filing 1995–2018
94Inventor score
Top patents by PatentIndex Score
24 records- 0183US7339236B2Semiconductor device, driver circuit and manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Mar 4, 2008·11 cites·14 claims
- 0279US7880262B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Feb 1, 2011·7 cites·4 claims
- 0371US6359318B1Semiconductor device with DMOS and bi-polar transistorsMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Mar 19, 2002·40 cites·3 claims
- 0469US7026705B2Semiconductor device with surge protection circuit capable of preventing current leakageRENESAS TECH CORP·Filed 2004·Granted Apr 11, 2006·14 cites·9 claims
- 0561US6593629B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 15, 2003·10 cites·15 claims
- 0660US6693344B1Semiconductor device having low and high breakdown voltage transistorsRENESAS TECH CORP·Filed 2000·Granted Feb 17, 2004·7 cites·5 claims
- 0757US6191466B1Semiconductor device containing a diodeMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Feb 20, 2001·21 cites·9 claims
- 0857US5736776ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 7, 1998·15 cites·10 claims
- 0956US6518158B1Method of manufacturing a semiconductor device including a fuseMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 11, 2003·7 cites·3 claims
- 1047US6096619AMethod of manufacturing a semiconductor device comprising a capacitor with an intrinsic polysilicon electrodeMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Aug 1, 2000·9 cites·8 claims
- 1146US6297532B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 2, 2001·13 cites·8 claims
- 1245US6639294B2Semiconductor device having a device formation region protected from a counterelectromotive forceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Oct 28, 2003·2 cites·8 claims
- 1345US5847440ABipolar transistor, semiconductor device having bipolar transistorsMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Dec 8, 1998·10 cites·13 claims
- 1443US2011089533A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2010·Application pending·0 cites
- 1542US6344678B1Semiconductor device comprising transistorMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 5, 2002·1 cites·4 claims
- 1642US2020279947A1Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2018·Application pending·0 cites
- 1741US5763926ASemiconductor device having a Bi-CMOS transistor including an n-channel MOS transistorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jun 9, 1998·6 cites·3 claims
- 1836US6573582B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 3, 2003·0 cites·5 claims
- 1935US2004144993A1Lateral transistorRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 2033US2003057502A1Semiconductor deviceFiled 2002·Application pending·0 cites
- 2132US5831328ASemiconductor device and manufacturing method of the deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 3, 1998·2 cites·33 claims
- 2232US2004120085A1Semiconductor device with surge protection circuitRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 2332US2004140527A1Semiconductor device having poly-poly capacitorRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 2431US6153915ACMOS semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 28, 2000·1 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →