Inventor · disambiguated record
Fu-Liang Yang
Also filed as: YANG FU · YANG FU-LIANG
159 granted patents·27 pending applications·5,744 citations·filing 1996–2024
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG113VANGUARD INT SEMICONDUCT CORP29ACADEMIA SINICA4HUANG CHIEN-CHAO4LEE TZYH-CHEANG4
Top patents by PatentIndex Score
186 records- 0199US6855990B2Strained-channel multiple-gate transistorTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Feb 15, 2005·272 cites·42 claims
- 0299US6492216B1Method of forming a transistor with a strained channelTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 10, 2002·452 cites·32 claims
- 0398US7452778B2Semiconductor nano-wire devices and methods of fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Nov 18, 2008·104 cites·21 claims
- 0498US6902962B2Silicon-on-insulator chip with multiple crystal orientationsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 7, 2005·139 cites·49 claims
- 0598US6867433B2Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 15, 2005·321 cites·69 claims
- 0698US6855606B2Semiconductor nano-rod devicesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 15, 2005·182 cites·12 claims
- 0797US7180134B2Methods and structures for planar and multiple-gate transistors formed on SOITAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 20, 2007·131 cites·10 claims
- 0897US7176084B2Self-aligned conductive spacer process for sidewall control gate of high-speed random access memoryTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 13, 2007·66 cites·18 claims
- 0997US7074656B2Doping of semiconductor fin devicesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 11, 2006·128 cites·59 claims
- 1097US6844238B2Multiple-gate transistors with improved gate controlTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jan 18, 2005·135 cites·31 claims
- 1197US6720619B1Semiconductor-on-insulator chip incorporating partially-depleted, fully-depleted, and multiple-gate devicesTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 13, 2004·172 cites·16 claims
- 1297US6703271B2Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 9, 2004·125 cites·12 claims
- 1397US6518105B1High performance PD SOI tunneling-biased MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Feb 11, 2003·214 cites·14 claims
- 1496US8174073B2Integrated circuit structures with multiple FinFETsLEE TSUNG-LIN·Filed 2007·Granted May 8, 2012·51 cites·3 claims
- 1596US7888201B2Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 15, 2011·45 cites·20 claims
- 1696US7368334B2Silicon-on-insulator chip with multiple crystal orientationsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 6, 2008·40 cites·20 claims
- 1796US7262086B2Contacts to semiconductor fin devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 28, 2007·34 cites·44 claims
- 1896US7183137B2Method for dicing semiconductor wafersTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 27, 2007·102 cites·15 claims
- 1995US7482236B2Structure and method for a sidewall SONOS memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 27, 2009·39 cites·20 claims
- 2095US7381649B2Structure for a multiple-gate FET device and a method for its fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 3, 2008·30 cites·19 claims
- 2195US7300837B2FinFET transistor device on SOI and method of fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Nov 27, 2007·161 cites·29 claims
- 2295US7172943B2Multiple-gate transistors formed on bulk substratesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 6, 2007·91 cites·36 claims
- 2395US7105894B2Contacts to semiconductor fin devicesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 12, 2006·89 cites·13 claims
- 2495US6864519B2CMOS SRAM cell configured using multiple-gate transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 8, 2005·96 cites·57 claims
- 2595US6071789AMethod for simultaneously fabricating a DRAM capacitor and metal interconnectionsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jun 6, 2000·265 cites·19 claims
- 2694US7851276B2Methods and structures for planar and multiple-gate transistors formed on SOITAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 14, 2010·26 cites·15 claims
- 2794US7268024B2Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 11, 2007·80 cites·26 claims
- 2894US7238989B2Strain balanced structure with a tensile strained silicon channel and a compressive strained silicon-germanium channel for CMOS performance enhancementTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 3, 2007·31 cites·19 claims
- 2994US7214991B2CMOS inverters configured using multiple-gate transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted May 8, 2007·84 cites·50 claims
- 3093US7863674B2Multiple-gate transistors formed on bulk substratesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 4, 2011·27 cites·20 claims
- 3193US7226832B2Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layerTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 5, 2007·16 cites·9 claims
- 3293US7005330B2Structure and method for forming the gate electrode in a multiple-gate transistorTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 28, 2006·65 cites·69 claims
- 3392US7276763B2Structure and method for forming the gate electrode in a multiple-gate transistorTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Oct 2, 2007·19 cites·22 claims
- 3492US7208815B2CMOS logic gate fabricated on hybrid crystal orientations and method of forming thereofTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 24, 2007·67 cites·29 claims
- 3592US6037216AMethod for simultaneously fabricating capacitor structures, for giga-bit DRAM cells, and peripheral interconnect structures, using a dual damascene processVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Mar 14, 2000·95 cites·24 claims
- 3691US7635632B2Gate electrode for a semiconductor fin deviceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 22, 2009·17 cites·10 claims
- 3791US7585711B2Semiconductor-on-insulator (SOI) strained active area transistorTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Sep 8, 2009·21 cites·42 claims
- 3891US6875655B2Method of forming DRAM capacitors with protected outside crown surface for more robust structuresTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 5, 2005·63 cites·20 claims
- 3991US5792689AMethod for manufacturing double-crown capacitors self-aligned to node contacts on dynamic random access memoryVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Aug 11, 1998·78 cites·20 claims
- 4090US8053839B2Doping of semiconductor fin devicesTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 8, 2011·8 cites·7 claims
- 4190US7948037B2Multiple-gate transistor structure and method for fabricatingTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted May 24, 2011·11 cites·18 claims
- 4290US7357838B2Relaxed silicon germanium substrate with low defect densityTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 15, 2008·13 cites·24 claims
- 4390US6784071B2Bonded SOI wafer with <100> device layer and <110> substrate for performance improvementTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 31, 2004·58 cites·8 claims
- 4489US8865539B2Fully depleted SOI multiple threshold voltage applicationCHEN HAO-YU·Filed 2011·Granted Oct 21, 2014·12 cites·20 claims
- 4589US7701008B2Doping of semiconductor fin devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 20, 2010·11 cites·19 claims
- 4689US6277709B1Method of forming shallow trench isolation structureVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Aug 21, 2001·78 cites·12 claims
- 4788US7893420B2Phase change memory with various grain sizesTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 22, 2011·13 cites·16 claims
- 4888US5956594AMethod for simultaneously forming capacitor plate and metal contact structures for a high density DRAM deviceVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Sep 21, 1999·106 cites·26 claims
- 4987US9190610B2Methods of forming phase change memory with various grain sizesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 17, 2015·4 cites·20 claims
- 5087US7423323B2Semiconductor device with raised segmentTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 9, 2008·12 cites·20 claims
Showing the top 50 of 186 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →