Inventor · disambiguated record
Gabriele Bellocchi
Also filed as: BELLOCCHI GABRIELE
6 granted patents·15 pending applications·0 citations·filing 2021–2025
66Inventor score
Top patents by PatentIndex Score
21 records- 0174US2025022919A1DOPING ACTIVATION AND OHMIC CONTACT FORMATION IN A SiC ELECTRONIC DEVICE, AND SiC ELECTRONIC DEVICEST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 0273US12051725B2Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic deviceST MICROELECTRONICS SRL·Filed 2023·Granted Jul 30, 2024·0 cites·17 claims
- 0368US12125933B2Method for manufacturing a uv-radiation detector device based on sic, and uv- radiation detector device based on sicST MICROELECTRONICS SRL·Filed 2023·Granted Oct 22, 2024·0 cites·18 claims
- 0466US11670685B2Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic deviceST MICROELECTRONICS SRL·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 0561US11605751B2Method for manufacturing a UV-radiation detector device based on SiC, and UV-radiation detector device based on SiCST MICROELECTRONICS SRL·Filed 2021·Granted Mar 14, 2023·0 cites·10 claims
- 0660US12374545B2Process for working a wafer of 4H—SiC material to form a 3C—SiC layer in direct contact with the 4H—SiC materialST MICROELECTRONICS SRL·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 0757US2024297044A1Process for manufacturing localized ion implants in silicon-carbide power electronic devicesST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0856US2025107121A1Forming a schottky contact in an electronic device, such as a jbs or mps diode, and electronic device with schottky contactST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0953US2024079237A1Method of manufacturing ohmic contacts of an electronic device, with thermal budget optimizationST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1052US2024178092A1Sic-based electronic device with multilayer and multifunctional passivation, and method of manufacturing the electronic deviceST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1151US2025393273A1ELECTRONIC DEVICE BASED ON SiC HAVING IMPROVED ELECTRICAL PERFORMANCES AND MANUFACTURING METHODST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 1250US2024429286A1Front side ohmic contact formation for sic deviceST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1349US2025113506A1One-step front ohmic and schottky contact foramtion on sic power devices with laser annealingST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1449US2025015145A1Method for creating an ohmic contact on a high-power electrical diodeST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1548US2025046665A1Methods for improving passivation layer durabilityST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1648US2023299173A1Forming an electronic device, such as a jbs or mps diode, based on 3c-sic, and 3c-sic electronic deviceST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1747US2023170390A1Sic-based electronic device with enhanced robustness, and method for manufacturing the electronic deviceST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
- 1847US2025275161A1Method for regulating the schottky barrier height in a silicon carbide power diode, and power diodeST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 1947US2023170271A1Method of manufacturing an anchoring element of a sic-based electronic device, anchoring element, and electronic deviceST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
- 2047US2022246771A1Vertical conduction electronic device comprising a jbs diode and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
- 2144US12224358B2JBS device with improved electrical performances, and manufacturing process of the JBS deviceST MICROELECTRONICS SRL·Filed 2022·Granted Feb 11, 2025·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →