Inventor · disambiguated record
Gaku Sugahara
Also filed as: SUGAHARA GAKU
31 granted patents·1 pending application·694 citations·filing 1996–2011
97Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD26PANASONIC CORP3ANZUE NAOMI1OKITA SHOGO1SUGAHARA GAKU1
Top patents by PatentIndex Score
32 records- 0197US5989998AMethod of forming interlayer insulating filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Nov 23, 1999·254 cites·8 claims
- 0296US6720586B1Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Apr 13, 2004·98 cites·4 claims
- 0393US6558756B2Method of forming interlayer insulating filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted May 6, 2003·42 cites·4 claims
- 0492US7060323B2Method of forming interlayer insulating filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 13, 2006·38 cites·2 claims
- 0590US7160748B2Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Jan 9, 2007·13 cites·11 claims
- 0686US6403976B1Semiconductor crystal, fabrication method thereof, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jun 11, 2002·37 cites·4 claims
- 0785US6958493B2Method for fabricating semiconductor light emitting deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Oct 25, 2005·8 cites·2 claims
- 0884US6798811B1Semiconductor laser device, method for fabricating the same, and optical disk apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Sep 28, 2004·18 cites·19 claims
- 0982US7338827B2Nitride semiconductor laser and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Mar 4, 2008·16 cites·5 claims
- 1082US6586774B2Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jul 1, 2003·21 cites·6 claims
- 1181US6911351B2Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 28, 2005·22 cites·87 claims
- 1277US6884648B2Method for fabricating semiconductor light emitting deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Apr 26, 2005·12 cites·20 claims
- 1376US7005680B2Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive membersMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Feb 28, 2006·11 cites·14 claims
- 1475US6709881B2Method for manufacturing semiconductor and method for manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 23, 2004·15 cites·1 claims
- 1569US6855571B1Method of producing GaN-based semiconductor laser device and semiconductor substrate used thereforMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Feb 15, 2005·12 cites·5 claims
- 1669US6653662B2Semiconductor light-emitting device, method for fabricating the same, and method for driving the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Nov 25, 2003·8 cites·7 claims
- 1767US8222670B2Semiconductor light emitting element and method for manufacturing sameANZUE NAOMI·Filed 2011·Granted Jul 17, 2012·1 cites·4 claims
- 1867US8030677B2Semiconductor light emitting element and method for manufacturing samePANASONIC CORP·Filed 2007·Granted Oct 4, 2011·2 cites·1 claims
- 1963US7292615B2Semiconductor laser device, method for fabricating the same, and optical disk apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Nov 6, 2007·4 cites·11 claims
- 2061US6927149B2Nitride semiconductor device and fabrication method thereof, and method for forming nitride semiconductor substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 9, 2005·7 cites·28 claims
- 2160US5877080AMethod of manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Mar 2, 1999·24 cites·18 claims
- 2259US6977186B2Method for manufacturing semiconductor laser optical deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 20, 2005·5 cites·2 claims
- 2359US6861316B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 1, 2005·7 cites·8 claims
- 2457US7816696B2Nitride semiconductor device and method for manufacturing samePANASONIC CORP·Filed 2006·Granted Oct 19, 2010·1 cites·13 claims
- 2553US7056756B2Nitride semiconductor laser device and fabricating method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 6, 2006·3 cites·4 claims
- 2652US6921678B2Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jul 26, 2005·2 cites·9 claims
- 2748US6620665B1Method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Sep 16, 2003·13 cites·14 claims
- 2847US8563332B2Wafer reclamation method and wafer reclamation apparatusOKITA SHOGO·Filed 2008·Granted Oct 22, 2013·0 cites·9 claims
- 2947US8198637B2Nitride semiconductor laser and method for fabricating the sameSUGAHARA GAKU·Filed 2007·Granted Jun 12, 2012·0 cites·6 claims
- 3046US7880192B2Nitride semiconductor light emitting element and nitride semiconductor light emitting devicePANASONIC CORP·Filed 2006·Granted Feb 1, 2011·0 cites·10 claims
- 3143US7145168B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Dec 5, 2006·0 cites·6 claims
- 3240US2001051228A1Method of forming interlayer insulating filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →