Inventor · disambiguated record
Geoffrey Hohn
Also filed as: Hohn Geoffrey
12 granted patents·4 pending applications·70 citations·filing 2015–2024
90Inventor score
Files withLAM RES CORP16
Top patents by PatentIndex Score
16 records- 0197US11608559B2Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2021·Granted Mar 21, 2023·6 cites·20 claims
- 0296US11920239B2Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasmaLAM RES CORP·Filed 2022·Granted Mar 5, 2024·3 cites·15 claims
- 0396US11365479B2Ex situ coating of chamber components for semiconductor processingLAM RES CORP·Filed 2020·Granted Jun 21, 2022·8 cites·16 claims
- 0496US9828672B2Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasmaLAM RES CORP·Filed 2015·Granted Nov 28, 2017·25 cites·19 claims
- 0594US12227837B2Ex situ coating of chamber components for semiconductor processingLAM RES CORP·Filed 2022·Granted Feb 18, 2025·2 cites·19 claims
- 0694US11101164B2Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2020·Granted Aug 24, 2021·3 cites·24 claims
- 0794US10760158B2Ex situ coating of chamber components for semiconductor processingLAM RES CORP·Filed 2018·Granted Sep 1, 2020·14 cites·23 claims
- 0893US12000047B2Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2023·Granted Jun 4, 2024·1 cites·20 claims
- 0993US10604841B2Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2016·Granted Mar 31, 2020·7 cites·24 claims
- 1087US12331402B2Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film depositionLAM RES CORP·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1181US2024218509A1Minimizing radical recombination using ald silicon oxide surface coating with intermittent restoration plasmaLAM RES CORP·Filed 2024·Application pending·0 cites
- 1279US12163219B2Ex situ coating of chamber components for semiconductor processingLAM RES CORP·Filed 2022·Granted Dec 10, 2024·0 cites·19 claims
- 1370US11702748B2Wafer level uniformity control in remote plasma film depositionLAM RES CORP·Filed 2017·Granted Jul 18, 2023·1 cites·8 claims
- 1469US2023304156A1Wafer level uniformity control in remote plasma film depositionLAM RES CORP·Filed 2023·Application pending·0 cites
- 1557US2018044791A1Minimizing radical recombination using ald silicon oxide surface coating with intermittent restoration plasmaLAM RES CORP·Filed 2017·Application pending·0 cites
- 1656US2023332291A1Remote plasma architecture for true radical processingLAM RES CORP·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →