Inventor · disambiguated record
Gene Lee
Also filed as: LEE GENE · LEE GENE H
15 granted patents·12 pending applications·425 citations·filing 1999–2025
92Inventor score
Top patents by PatentIndex Score
27 records- 0196US6235643B1Method for etching a trench having rounded top and bottom corners in a silicon substrateAPPLIED MATERIALS INC·Filed 1999·Granted May 22, 2001·305 cites·32 claims
- 0294US11527408B2Multiple spacer patterning schemesAPPLIED MATERIALS INC·Filed 2020·Granted Dec 13, 2022·4 cites·8 claims
- 0394US9595451B1Highly selective etching methods for etching dielectric materialsAPPLIED MATERIALS INC·Filed 2015·Granted Mar 14, 2017·16 cites·19 claims
- 0493US10957558B2Methods of etching metal-containing layersAPPLIED MATERIALS INC·Filed 2020·Granted Mar 23, 2021·3 cites·20 claims
- 0592US9299580B2High aspect ratio plasma etch for 3D NAND semiconductor applicationsAPPLIED MATERIALS INC·Filed 2014·Granted Mar 29, 2016·17 cites·20 claims
- 0688US10636675B2Methods of etching metal-containing layersAPPLIED MATERIALS INC·Filed 2018·Granted Apr 28, 2020·4 cites·20 claims
- 0783US8658541B2Method of controlling trench microloading using plasma pulsingLEE GENE H·Filed 2010·Granted Feb 25, 2014·10 cites·15 claims
- 0882US9054045B2Method for isotropic etchingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Jun 9, 2015·5 cites·18 claims
- 0980US6583063B1Plasma etching of silicon using fluorinated gas mixturesAPPLIED MATERIALS INC·Filed 1999·Granted Jun 24, 2003·59 cites·18 claims
- 1074US9852923B2Mask etch for patterningAPPLIED MATERIALS INC·Filed 2015·Granted Dec 26, 2017·2 cites·12 claims
- 1170US2023093450A1Multiple spacer patterning schemesAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 1265US11315787B2Multiple spacer patterning schemesAPPLIED MATERIALS INC·Filed 2020·Granted Apr 26, 2022·0 cites·14 claims
- 1363US2025149337A1High selectivity cryogenic tungsten-boron-carbide etchAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1461US12211693B2Spacer patterning process with flat top profileAPPLIED MATERIALS INC·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 1559US12266537B2Selective barrier metal etchingAPPLIED MATERIALS INC·Filed 2022·Granted Apr 1, 2025·0 cites·15 claims
- 1659US2024395561A1Introduction of metal in hard mask for high aspect ratio device patterningAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1758US2025095990A1Metal-containing hardmask opening methods using boron-and-halogen-containing precursorsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1858US2024162057A1Spacer patterning process with flat top profileAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1956US12322602B2Recessed metal etching methodsAPPLIED MATERIALS INC·Filed 2022·Granted Jun 3, 2025·0 cites·20 claims
- 2056US2025391708A1Substrate processing for improved wafer thickness uniformityAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2155US2023395391A1Ruthenium carbide for dram capacitor mold patterningAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2250US2014179109A1Method of controlling trench microloading using plasma pulsingAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 2348US2018076049A1Mask etch for patterningAPPLIED MATERIALS INC·Filed 2017·Application pending·0 cites
- 2446US11658043B2Selective anisotropic metal etchAPPLIED MATERIALS INC·Filed 2021·Granted May 23, 2023·0 cites·20 claims
- 2544US2022189771A1Underlayer film for semiconductor device formationAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 2633US2003092280A1Method for etching tungsten using NF3 and Cl2APPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 2729US2010248487A1Method and apparatus for elimination of micro-trenching during etching of a hardmask layerLEE GENE H·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →