Inventor · disambiguated record
Gerold W. Neudeck
Also filed as: NEUDECK GEROLD W
14 granted patents·662 citations·filing 1987–1999
95Inventor score
Top patents by PatentIndex Score
14 records- 0196US5273921AMethods for fabricating a dual-gated semiconductor-on-insulator field effect transistorPURDUE RESEARCH FOUNDATION·Filed 1991·Granted Dec 28, 1993·127 cites·29 claims
- 0291US5494837AMethod of forming semiconductor-on-insulator electronic devices by growing monocrystalline semiconducting regions from trench sidewallsPURDUE RESEARCH FOUNDATION·Filed 1994·Granted Feb 27, 1996·90 cites·11 claims
- 0390US5349228ADual-gated semiconductor-on-insulator field effect transistorPURDUE RESEARCH FOUNDATION·Filed 1993·Granted Sep 20, 1994·74 cites·12 claims
- 0488US5068203AMethod for forming thin silicon membrane or beamDELCO ELECTRONICS CORP·Filed 1990·Granted Nov 26, 1991·70 cites·8 claims
- 0586US5349224AIntegrable MOS and IGBT devices having trench gate structurePURDUE RESEARCH FOUNDATION·Filed 1993·Granted Sep 20, 1994·68 cites·24 claims
- 0673US6461003B1Corner cube arrays and manufacture thereofPURDUE RESEARCH FOUNDATION·Filed 1999·Granted Oct 8, 2002·44 cites·30 claims
- 0767US5481126ASemiconductor-on-insulator electronic devices having trench isolated monocrystalline active regionsPURDUE RESEARCH FOUNDATION·Filed 1994·Granted Jan 2, 1996·26 cites·27 claims
- 0865US5118634ASelf-aligned integrated circuit bipolar transistor having monocrystalline contactsPURDUE RESEARCH FOUNDATION·Filed 1990·Granted Jun 2, 1992·39 cites·16 claims
- 0965US4829016ABipolar transistor by selective and lateral epitaxial overgrowthPURDUE RESEARCH FOUNDATION·Filed 1987·Granted May 9, 1989·30 cites·11 claims
- 1063US5434092AMethod for fabricating a triple self-aligned bipolar junction transistorPURDUE RESEARCH FOUNDATION·Filed 1994·Granted Jul 18, 1995·17 cites·18 claims
- 1158US5286996ATriple self-aligned bipolar junction transistorPURDUE RESEARCH FOUNDATION·Filed 1991·Granted Feb 15, 1994·14 cites·10 claims
- 1256US5422299AMethod of forming single crystalline electrical isolated wellsPURDUE RESEARCH FOUNDATION·Filed 1993·Granted Jun 6, 1995·30 cites·16 claims
- 1353US5134454ASelf-aligned integrated circuit bipolar transistor having monocrystalline contactsPURDUE RESEARCH FOUNDATION·Filed 1991·Granted Jul 28, 1992·24 cites·10 claims
- 1448US5382828ATriple self-aligned bipolar junction transistorPURDUE RESEARCH FOUNDATION·Filed 1994·Granted Jan 17, 1995·9 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →