Inventor · disambiguated record
Gerhard Prechtl
Also filed as: PRECHTL GERHARD
66 granted patents·11 pending applications·261 citations·filing 2003–2025
98Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG49INFINEON TECHNOLOGIES AUSTRIA8INFINEON TECHNOLOGIES AG5PRECHTL GERHARD5SWAROVSKI AG5
Top patents by PatentIndex Score
77 records- 0198US11417758B2Enhancement mode Group III nitride-based transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Aug 16, 2022·5 cites·18 claims
- 0297US9048303B1Group III-nitride-based enhancement mode transistorINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Jun 2, 2015·32 cites·18 claims
- 0395US9768258B1Substrate structure, semiconductor component and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Sep 19, 2017·11 cites·23 claims
- 0493US9960157B2Bidirectional normally-off III-V high electron mobility transistor (HEMT)devices and circuitsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted May 1, 2018·10 cites·30 claims
- 0590US9837520B2Group III-nitride-based enhancement mode transistor having a multi-heterojunction fin structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Dec 5, 2017·6 cites·17 claims
- 0689US11257941B2High electron mobility transistor with doped semiconductor region in gate structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Feb 22, 2022·2 cites·19 claims
- 0789US9837522B2III-nitride bidirectional deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Dec 5, 2017·6 cites·22 claims
- 0889US9035355B2Multi-channel HEMTOSTERMAIER CLEMENS·Filed 2012·Granted May 19, 2015·10 cites·20 claims
- 0988US10199216B2Semiconductor wafer and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 5, 2019·5 cites·12 claims
- 1088US9917578B2Active gate-source capacitance clamp for normally-off HEMTINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Mar 13, 2018·7 cites·17 claims
- 1188US9728630B2High-electron-mobility transistor having a buried field plateINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Aug 8, 2017·7 cites·9 claims
- 1288US9647104B2Group III-nitride-based enhancement mode transistor having a heterojunction fin structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted May 9, 2017·5 cites·9 claims
- 1388US9142550B2High-voltage cascaded diode with HEMT and monolithically integrated semiconductor diodeINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Sep 22, 2015·9 cites·20 claims
- 1487US9847394B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Dec 19, 2017·5 cites·20 claims
- 1587USD543892SArtificial gemstone, natural gemstone ornamental object made of glassSWAROVSKI AG·Filed 2006·Granted Jun 5, 2007·25 cites·1 claims
- 1685US11349012B2Group III nitride-based transistor device and method of fabricating a gate structure for a group III nitride-based transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted May 31, 2022·2 cites·16 claims
- 1785US9337279B2Group III-nitride-based enhancement mode transistorINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted May 10, 2016·6 cites·22 claims
- 1884US10600710B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Mar 24, 2020·3 cites·10 claims
- 1984US9570565B2Field effect power transistor metalization having a comb structure with contact fingersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Feb 14, 2017·3 cites·20 claims
- 2084US9553155B2Semiconductor device and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jan 24, 2017·4 cites·20 claims
- 2184US8872235B2Integrated Schottky diode for HEMTsPRECHTL GERHARD·Filed 2012·Granted Oct 28, 2014·6 cites·16 claims
- 2283USD544392SArtificial gemstone, natural gemstone ornamental object made of glassSWAROVSKI AG·Filed 2006·Granted Jun 12, 2007·20 cites·1 claims
- 2382US12356653B2High electron mobility transistor with doped semiconductor region in gate structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Granted Jul 8, 2025·0 cites·17 claims
- 2482US9263545B2Method of manufacturing a high breakdown voltage III-nitride deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted Feb 16, 2016·3 cites·13 claims
- 2581USD549610SArtificial gemstone, natural gemstone ornamental object made of glassSUSWAROVSKI AG·Filed 2006·Granted Aug 28, 2007·21 cites·1 claims
- 2680US10177061B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jan 8, 2019·3 cites·19 claims
- 2778US10090406B2Non-planar normally off compound semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Oct 2, 2018·4 cites·20 claims
- 2875US10388736B2Methods of forming substrate structures and semiconductor componentsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Aug 20, 2019·1 cites·20 claims
- 2974USD560542SArtificial gemstone, natural gemstone ornamental object made of glassSWAROVSKI AG·Filed 2007·Granted Jan 29, 2008·20 cites·1 claims
- 3073US11929430B2High electron mobility transistor with doped semiconductor region in gate structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Mar 12, 2024·0 cites·18 claims
- 3170US12471305B2Water and ion barrier for III-V semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Nov 11, 2025·0 cites·22 claims
- 3270US9666705B2Contact structures for compound semiconductor devicesPRECHTL GERHARD·Filed 2012·Granted May 30, 2017·3 cites·18 claims
- 3370US9450063B2Semiconductor device and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Sep 20, 2016·2 cites·6 claims
- 3470US9076763B2High breakdown voltage III-nitride deviceOSTERMAIER CLEMENS·Filed 2012·Granted Jul 7, 2015·2 cites·13 claims
- 3569US10411008B2System and method for depletion mode and enhancement mode transistorsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Sep 10, 2019·1 cites·30 claims
- 3669US10126355B1Semiconductor probe test card with integrated hall measurement featuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Nov 13, 2018·2 cites·19 claims
- 3768US12431886B2Electronic circuit with a transistor device and a clamp circuit and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Sep 30, 2025·0 cites·14 claims
- 3867US12471301B2Integrated circuit and bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2020·Granted Nov 11, 2025·0 cites·13 claims
- 3967US11721754B2Enhancement mode transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Aug 8, 2023·0 cites·21 claims
- 4067US10038085B2High electron mobility transistor with carrier injection mitigation gate structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Jul 31, 2018·1 cites·4 claims
- 4167US9515162B2Surface treatment of semiconductor substrate using free radical state fluorine particlesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Dec 6, 2016·2 cites·14 claims
- 4267US9349829B2Method of manufacturing a multi-channel HEMTINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted May 24, 2016·1 cites·8 claims
- 4366US10074597B2Interdigit device on leadframe for evenly distributed current flowINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted Sep 11, 2018·1 cites·20 claims
- 4463US2025176206A1Type iii-v semiconductor device with structured passivationINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 4563US2025203912A1Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 4662US12230700B2Type III-V semiconductor device with structured passivationINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Feb 18, 2025·0 cites·12 claims
- 4762US12159918B2Group III nitride-based transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Dec 3, 2024·0 cites·13 claims
- 4862US9281413B2Enhancement mode deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Mar 8, 2016·1 cites·23 claims
- 4960US2025029920A1Semiconductor substrate, semiconductor component and methodsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 5058US2025089289A1High-electron-mobility field effect transistor with crystallographically aligned electrode region structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
Showing the top 50 of 77 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →