Inventor · disambiguated record
George Samachisa
Also filed as: SAMACHISA GEORGE
84 granted patents·3 pending applications·4,969 citations·filing 1992–2024
99Inventor score
Files withSANDISK CORP35SANDISK 3D LLC19SANDISK TECHNOLOGIES INC9SUNRISE MEMORY CORP8SAMACHISA GEORGE5
Top patents by PatentIndex Score
87 records- 0199US9227456B2Memories with cylindrical read/write stacksSANDISK 3D LLC·Filed 2013·Granted Jan 5, 2016·188 cites·14 claims
- 0299US8765543B2Method of making an ultrahigh density vertical NAND memory device with shielding wingsSANDISK TECHNOLOGIES INC·Filed 2013·Granted Jul 1, 2014·53 cites·9 claims
- 0399US8580639B2Method of making ultrahigh density vertical NAND memory deviceALSMEIER JOHANN·Filed 2013·Granted Nov 12, 2013·53 cites·8 claims
- 0499US8461000B2Method of making ultrahigh density vertical NAND memory deviceSANDISK TECHNOLOGIES INC·Filed 2012·Granted Jun 11, 2013·69 cites·11 claims
- 0599US8349681B2Ultrahigh density monolithic, three dimensional vertical NAND memory deviceSANDISK TECHNOLOGIES INC·Filed 2010·Granted Jan 8, 2013·290 cites·13 claims
- 0699US7983065B2Three-dimensional array of re-programmable non-volatile memory elements having vertical bit linesSANDISK 3D LLC·Filed 2009·Granted Jul 19, 2011·306 cites·41 claims
- 0799US6925007B2Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elementsSANDISK CORP·Filed 2002·Granted Aug 2, 2005·241 cites·22 claims
- 0899US6151248ADual floating gate EEPROM cell array with steering gates shared by adjacent cellsSANDISK CORP·Filed 1999·Granted Nov 21, 2000·462 cites·31 claims
- 0999US6103573AProcessing techniques for making a dual floating gate EEPROM cell arraySANDISK CORP·Filed 1999·Granted Aug 15, 2000·390 cites·27 claims
- 1098US11839086B23-dimensional memory string array of thin-film ferroelectric transistorsSUNRISE MEMORY CORP·Filed 2022·Granted Dec 5, 2023·5 cites·66 claims
- 1198US8958228B2Non-volatile memory having 3D array of read/write elements with vertical bit lines and select devices and methods thereofSANDISK 3D LLC·Filed 2014·Granted Feb 17, 2015·59 cites·12 claims
- 1298US8928061B2Three dimensional NAND device with silicide containing floating gatesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 6, 2015·72 cites·11 claims
- 1398US8824183B2Non-volatile memory having 3D array of read/write elements with vertical bit lines and select devices and methods thereofSAMACHISA GEORGE·Filed 2011·Granted Sep 2, 2014·161 cites·20 claims
- 1498US7342279B2Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elementsSANDISK CORP·Filed 2005·Granted Mar 11, 2008·65 cites·34 claims
- 1598US6717851B2Method of reducing disturbs in non-volatile memorySANDISK CORP·Filed 2001·Granted Apr 6, 2004·128 cites·15 claims
- 1698US6266278B1Dual floating gate EEPROM cell array with steering gates shared adjacent cellsSANDISK CORP·Filed 2000·Granted Jul 24, 2001·173 cites·5 claims
- 1798US5428621ALatent defect handling in EEPROM devicesSUNDISK CORP·Filed 1992·Granted Jun 27, 1995·331 cites·64 claims
- 1897US9165940B2Three dimensional NAND device with silicide containing floating gates and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 20, 2015·36 cites·20 claims
- 1997US8625322B2Non-volatile memory having 3D array of read/write elements with low current structures and methods thereofSAMACHISA GEORGE·Filed 2011·Granted Jan 7, 2014·31 cites·11 claims
- 2097US8547720B2Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word linesSAMACHISA GEORGE·Filed 2011·Granted Oct 1, 2013·39 cites·12 claims
- 2197US8395942B2Junctionless TFT NAND flash memorySAMACHISA GEORGE·Filed 2010·Granted Mar 12, 2013·44 cites·2 claims
- 2297US8351236B2Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architectureSANDISK 3D LLC·Filed 2010·Granted Jan 8, 2013·26 cites·18 claims
- 2397US7830698B2Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using sameSANDISK 3D LLC·Filed 2008·Granted Nov 9, 2010·74 cites·25 claims
- 2497US7211866B2Scalable self-aligned dual floating gate memory cell array and methods of forming the arraySANDISK CORP·Filed 2005·Granted May 1, 2007·45 cites·13 claims
- 2597US6936887B2Non-volatile memory cells utilizing substrate trenchesSANDISK CORP·Filed 2001·Granted Aug 30, 2005·101 cites·30 claims
- 2697US6570785B1Method of reducing disturbs in non-volatile memorySANDISK CORP·Filed 2000·Granted May 27, 2003·147 cites·10 claims
- 2797US6420231B1Processing techniques for making a dual floating gate EEPROM cell arraySANDISK CORP·Filed 2000·Granted Jul 16, 2002·138 cites·14 claims
- 2896US9330763B1Operation modes for an inverted NAND architectureSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 3, 2016·27 cites·20 claims
- 2996US8274130B2Punch-through diode steering elementMIHNEA ANDREI·Filed 2009·Granted Sep 25, 2012·40 cites·20 claims
- 3096US8199576B2Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architectureFASOLI LUCA·Filed 2010·Granted Jun 12, 2012·43 cites·18 claims
- 3196US7951669B2Methods of making flash memory cell arrays having dual control gates per memory cell charge storage elementSANDISK CORP·Filed 2006·Granted May 31, 2011·54 cites·25 claims
- 3296US6344993B1Dual floating gate EEPROM cell array with steering gates shared by adjacent cellsSANDISK CORP·Filed 2001·Granted Feb 5, 2002·96 cites·4 claims
- 3396US5677872ALow voltage erase of a flash EEPROM system having a common erase electrode for two individual erasable sectorsSANDISK CORP·Filed 1996·Granted Oct 14, 1997·129 cites·8 claims
- 3495US7341918B2Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elementsSANDISK CORP·Filed 2005·Granted Mar 11, 2008·24 cites·9 claims
- 3595US6762092B2Scalable self-aligned dual floating gate memory cell array and methods of forming the arraySANDISK CORP·Filed 2001·Granted Jul 13, 2004·78 cites·20 claims
- 3695US6532172B2Steering gate and bit line segmentation in non-volatile memoriesSANDISK CORP·Filed 2001·Granted Mar 11, 2003·101 cites·15 claims
- 3794US9721653B2Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architectureSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 1, 2017·8 cites·17 claims
- 3894US8824191B2Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereofSANDISK 3D LLC·Filed 2013·Granted Sep 2, 2014·16 cites·19 claims
- 3994US5579259ALow voltage erase of a flash EEPROM system having a common erase electrode for two individually erasable sectorsSANDISK CORP·Filed 1995·Granted Nov 26, 1996·103 cites·15 claims
- 4093US8817514B2Non-volatile memory having 3D array of read/write elements with low current structures and methods thereofSANDISK 3D LLC·Filed 2014·Granted Aug 26, 2014·10 cites·10 claims
- 4193US8576651B2Temperature compensation of conductive bridge memory arraysSCHEUERLEIN ROY E·Filed 2012·Granted Nov 5, 2013·14 cites·35 claims
- 4293US8462580B2Memory system with reversible resistivity-switching using pulses of alternatrie polarityRABKIN PETER·Filed 2010·Granted Jun 11, 2013·20 cites·30 claims
- 4393US7443736B2Substrate electron injection techniques for programming non-volatile charge storage memory cells and for controlling program disturbSANDISK CORP·Filed 2007·Granted Oct 28, 2008·16 cites·18 claims
- 4493US6977844B2Method of reducing disturbs in non-volatile memorySANDISK CORP·Filed 2005·Granted Dec 20, 2005·23 cites·8 claims
- 4592US6091633AMemory array architecture utilizing global bit lines shared by multiple cellsSANDISK CORP·Filed 1999·Granted Jul 18, 2000·101 cites·30 claims
- 4691US6980471B1Substrate electron injection techniques for programming non-volatile charge storage memory cellsSANDISK CORP·Filed 2004·Granted Dec 27, 2005·35 cites·11 claims
- 4790US8355271B2Memory system with reversible resistivity-switching using pulses of alternate polaritySANDISK 3D LLC·Filed 2010·Granted Jan 15, 2013·14 cites·29 claims
- 4890US7579247B2Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elementsSANDISK CORP·Filed 2008·Granted Aug 25, 2009·11 cites·9 claims
- 4989US11515432B2Cool electron erasing in thin-film storage transistorsSUNRISE MEMORY CORP·Filed 2021·Granted Nov 29, 2022·2 cites·31 claims
- 5088US7479677B2Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elementsSANDISK CORP·Filed 2008·Granted Jan 20, 2009·9 cites·20 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →