Inventor · disambiguated record
Gishi Chung
Also filed as: CHUNG GISHI
13 granted patents·9 pending applications·233 citations·filing 1989–2008
93Inventor score
Top patents by PatentIndex Score
22 records- 0186US6890869B2Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereofTOKYO ELECTRON LTD·Filed 2001·Granted May 10, 2005·32 cites·14 claims
- 0278US6949829B2Semiconductor device and fabrication method thereforTOKYO ELECTRON LTD·Filed 2001·Granted Sep 27, 2005·22 cites·40 claims
- 0375US4978634AMethod of making trench DRAM cell with stacked capacitor and buried lateral contactTEXAS INSTRUMENTS INC·Filed 1989·Granted Dec 18, 1990·33 cites·5 claims
- 0472US6893953B2Fabrication process of a semiconductor device including a CVD process of a metal filmTOKYO ELECTRON LTD·Filed 2001·Granted May 17, 2005·16 cites·29 claims
- 0567US8394231B2Plasma process device and plasma process methodTAKATSUKI KOICHI·Filed 2007·Granted Mar 12, 2013·3 cites·18 claims
- 0667US7662728B2Substrate processing methodTOKYO ELECTRON LTD·Filed 2006·Granted Feb 16, 2010·2 cites·20 claims
- 0767US5251168ABoundary cells for improving retention time in memory devicesTEXAS INSTRUMENTS INC·Filed 1991·Granted Oct 5, 1993·35 cites·17 claims
- 0865US5352913ADynamic memory storage capacitor having reduced gated diode leakageTEXAS INSTRUMENTS INC·Filed 1994·Granted Oct 4, 1994·20 cites·3 claims
- 0958US5202279APoly sidewall process to reduce gated diode leakageTEXAS INSTRUMENTS INC·Filed 1990·Granted Apr 13, 1993·16 cites·8 claims
- 1058US5017506AMethod for fabricating a trench DRAMTEXAS INSTRUMENTS INC·Filed 1989·Granted May 21, 1991·25 cites·4 claims
- 1154US2009011149A1Substrate processing methodTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 1249US7601402B2Method for forming insulation film and apparatus for forming insulation filmTOKYO ELECTRON LTD·Filed 2003·Granted Oct 13, 2009·2 cites·13 claims
- 1346US5112762AHigh angle implant around top of trench to reduce gated diode leakageANDERSON DIRK N·Filed 1990·Granted May 12, 1992·19 cites·12 claims
- 1445US2006000704A1Solution treatment apparatus and solution treatment methodTOKYO ELECTRON LTD·Filed 2003·Application pending·0 cites
- 1544US2004251141A1Electroless plating apparatus and electroless plating methodTOKYO ELECTRON LTD·Filed 2004·Application pending·0 cites
- 1640US5252506AMethod to eliminate gate filaments on field plate isolated devicesTEXAS INSTRUMENTS INC·Filed 1992·Granted Oct 12, 1993·8 cites·19 claims
- 1739US2004253839A1Semiconductor manufacturing apparatus and heat treatment methodTOKYO ELECTRON LTD·Filed 2004·Application pending·0 cites
- 1838US2005170093A1Coating device and coating methodTOKYO ELECTRON LTD·Filed 2003·Application pending·0 cites
- 1938US2009085130A1Semiconductor deviceSUZUKI KENJI·Filed 2005·Application pending·0 cites
- 2037US2004127033A1Plasma processing device and plasma processing methodFiled 2002·Application pending·0 cites
- 2137US2006037858A1Electroless plating apparatus and electroless plating methodTOKYO ELECTRON LTD·Filed 2003·Application pending·0 cites
- 2236US2002173078A1Method and apparatus for manufacturing semiconductor deviceFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →