Inventor · disambiguated record
Gilbert Dewey
Also filed as: DEWEY GILBERT · DEWEY GILBERT W · DEWEY GILBERT WILLIAM
398 granted patents·82 pending applications·1,582 citations·filing 2004–2025
99Inventor score
Top patents by PatentIndex Score
480 records- 0198US11923410B2Transistor with isolation below source and drainINTEL CORP·Filed 2021·Granted Mar 5, 2024·4 cites·23 claims
- 0298US9123567B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureRADOSAVLJEVIC MARKO·Filed 2011·Granted Sep 1, 2015·66 cites·26 claims
- 0398US8890264B2Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interfaceDEWEY GILBERT·Filed 2012·Granted Nov 18, 2014·95 cites·13 claims
- 0498US8283653B2Non-planar germanium quantum well devicesPILLARISETTY RAVI·Filed 2009·Granted Oct 9, 2012·47 cites·20 claims
- 0598US8110877B2Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regionsMUKHERJEE NILOY·Filed 2008·Granted Feb 7, 2012·108 cites·15 claims
- 0697US9240410B2Group III-N nanowire transistorsTHEN HAN WUI·Filed 2011·Granted Jan 19, 2016·25 cites·17 claims
- 0797US8952541B2Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processesMUKHERJEE NILOY·Filed 2012·Granted Feb 10, 2015·36 cites·5 claims
- 0897US8765563B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2012·Granted Jul 1, 2014·42 cites·9 claims
- 0997US8575596B2Non-planar germanium quantum well devicesPILLARISETTY RAVI·Filed 2012·Granted Nov 5, 2013·24 cites·14 claims
- 1096US11996411B2Stacked forksheet transistorsINTEL CORP·Filed 2020·Granted May 28, 2024·4 cites·21 claims
- 1196US11862730B2Top-gate doped thin film transistorINTEL CORP·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 1296US11843058B2Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structuresINTEL CORP·Filed 2021·Granted Dec 12, 2023·3 cites·18 claims
- 1396US11437283B2Backside contacts for semiconductor devicesINTEL CORP·Filed 2019·Granted Sep 6, 2022·12 cites·25 claims
- 1496US9123790B2Contact techniques and configurations for reducing parasitic resistance in nanowire transistorsPILLARISETTY RAVI·Filed 2011·Granted Sep 1, 2015·24 cites·12 claims
- 1596US8785909B2Non-planar semiconductor device having channel region with low band-gap cladding layerRADOSAVLJEVIC MARKO·Filed 2012·Granted Jul 22, 2014·28 cites·31 claims
- 1696US7947971B2Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2010·Granted May 24, 2011·24 cites·10 claims
- 1795US12107085B2Interconnect techniques for electrically connecting source/drain regions of stacked transistorsINTEL CORP·Filed 2023·Granted Oct 1, 2024·2 cites·20 claims
- 1895US11764306B2Multi-layer crystalline back gated thin film transistorINTEL CORP·Filed 2021·Granted Sep 19, 2023·2 cites·20 claims
- 1995US11171243B2Transistor structures with a metal oxide contact bufferINTEL CORP·Filed 2019·Granted Nov 9, 2021·11 cites·14 claims
- 2095US9634007B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2014·Granted Apr 25, 2017·16 cites·5 claims
- 2195US9337291B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2015·Granted May 10, 2016·9 cites·7 claims
- 2295US9245989B2High voltage field effect transistorsTHEN HAN WUI·Filed 2011·Granted Jan 26, 2016·17 cites·20 claims
- 2395US8823059B2Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stackDEWEY GILBERT·Filed 2012·Granted Sep 2, 2014·15 cites·31 claims
- 2495US7759142B1Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2008·Granted Jul 20, 2010·29 cites·17 claims
- 2594US11342227B2Stacked transistor structures with asymmetrical terminal interconnectsINTEL CORP·Filed 2020·Granted May 24, 2022·3 cites·20 claims
- 2694US10084058B2Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2016·Granted Sep 25, 2018·7 cites·14 claims
- 2794US9397188B2Group III-N nanowire transistorsINTEL CORP·Filed 2015·Granted Jul 19, 2016·7 cites·8 claims
- 2894US8258498B2Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsMAJHI PRASHANT·Filed 2011·Granted Sep 4, 2012·15 cites·17 claims
- 2994US7465976B2Tunneling field effect transistor using angled implants for forming asymmetric source/drain regionsINTEL CORP·Filed 2005·Granted Dec 16, 2008·37 cites·11 claims
- 3094US7074680B2Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2004·Granted Jul 11, 2006·64 cites·20 claims
- 3193US11362215B2Top-gate doped thin film transistorINTEL CORP·Filed 2018·Granted Jun 14, 2022·6 cites·21 claims
- 3293US9570614B2Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxationINTEL CORP·Filed 2013·Granted Feb 14, 2017·14 cites·8 claims
- 3393US9461160B2Non-planar III-N transistorTHEN HAN WUI·Filed 2011·Granted Oct 4, 2016·13 cites·10 claims
- 3493US8148772B2Recessed channel array transistor (RCAT) structuresDOYLE BRIAN S·Filed 2011·Granted Apr 3, 2012·14 cites·14 claims
- 3592US11264512B2Thin film transistors having U-shaped featuresINTEL CORP·Filed 2018·Granted Mar 1, 2022·6 cites·20 claims
- 3692US10541305B2Group III-N nanowire transistorsINTEL CORP·Filed 2019·Granted Jan 21, 2020·4 cites·20 claims
- 3792US10211208B2High-mobility semiconductor source/drain spacerINTEL CORP·Filed 2015·Granted Feb 19, 2019·7 cites·21 claims
- 3892US10026845B2Deep gate-all-around semiconductor device having germanium or group III-V active layerINTEL CORP·Filed 2017·Granted Jul 17, 2018·5 cites·25 claims
- 3992US9666492B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureINTEL CORP·Filed 2015·Granted May 30, 2017·6 cites·17 claims
- 4092US9136343B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2013·Granted Sep 15, 2015·9 cites·25 claims
- 4192US9029835B2Epitaxial film on nanoscale structureINTEL CORP·Filed 2012·Granted May 12, 2015·13 cites·19 claims
- 4292US8936976B2Conductivity improvements for III-V semiconductor devicesRADOSAVLJEVIC MARKO·Filed 2009·Granted Jan 20, 2015·16 cites·20 claims
- 4392US8890120B2Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETsKOTLYAR ROZA·Filed 2012·Granted Nov 18, 2014·13 cites·14 claims
- 4492US8633471B2Apparatus and methods for forming a modulation doped non-planar transistorPILLARISETTY RAVI·Filed 2011·Granted Jan 21, 2014·9 cites·18 claims
- 4592US7915642B2Apparatus and methods for forming a modulation doped non-planar transistorINTEL CORP·Filed 2008·Granted Mar 29, 2011·14 cites·7 claims
- 4692US7323423B2Forming high-k dielectric layers on smooth substratesINTEL CORP·Filed 2004·Granted Jan 29, 2008·49 cites·18 claims
- 4791US10964701B2Vertical shared gate thin-film transistor-based charge storage memoryINTEL CORP·Filed 2017·Granted Mar 30, 2021·6 cites·15 claims
- 4891US10229997B2Indium-rich NMOS transistor channelsINTEL CORP·Filed 2015·Granted Mar 12, 2019·6 cites·20 claims
- 4991US10186581B2Group III-N nanowire transistorsINTEL CORP·Filed 2017·Granted Jan 22, 2019·4 cites·20 claims
- 5091US8785907B2Epitaxial film growth on patterned substrateGOEL NITI·Filed 2012·Granted Jul 22, 2014·13 cites·24 claims
Showing the top 50 of 480 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →