Inventor · disambiguated record
Giovanni Franco
Also filed as: FRANCO GIOVANNI
7 granted patents·6 pending applications·69 citations·filing 1989–2025
80Inventor score
Files withST MICROELECTRONICS SRL7LPE SPA2AXCELIS TECH INC1CONS RIC MICROELETTRONICA1EXTRUSIOVINYL & PLASTICS CO IN1
Top patents by PatentIndex Score
13 records- 0174US5209282AVertical blind with corrugated surfaceEXTRUSIOVINYL & PLASTICS CO IN·Filed 1989·Granted May 11, 1993·43 cites·2 claims
- 0268US12334346B2Method for manufacturing a SiC electronic device with reduced handling steps, and sic electronic deviceST MICROELECTRONICS SRL·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 0366US2025176235A1Ohmic contact formation in a sic-based electronic deviceST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 0463US12485458B2Method for removing layers of silicon carbide, as well as process and apparatus for cleaning epitaxial reactor componentsLPE SPA·Filed 2024·Granted Dec 2, 2025·0 cites·16 claims
- 0561US12249624B2Ohmic contact formation in a SiC-based electronic deviceST MICROELECTRONICS SRL·Filed 2021·Granted Mar 11, 2025·0 cites·16 claims
- 0657US11784049B2Method for manufacturing a sic electronic device with reduced handling steps, and sic electronic deviceST MICROELECTRONICS SRL·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 0757US2025019861A1Process for growing active layers in sequenceLPE SPA·Filed 2024·Application pending·0 cites
- 0854US2025316481A1Substrate including a pre-epitaxial stacking fault expansion-stop layer, devices including the same, and process of manufactureAXCELIS TECH INC·Filed 2025·Application pending·0 cites
- 0950US6221719B1Process for the manufacturing of a DMOS-technology transistor providing for a single thermal process for the formation of source and body regionsST MICROELECTRONICS SRL·Filed 1998·Granted Apr 24, 2001·19 cites·17 claims
- 1044US2022005702A1Process for manufacturing a silicon carbide semiconductor device having improved characteristicsST MICROELECTRONICS SRL·Filed 2021·Application pending·0 cites
- 1143US2023094592A1Process for manufacturing a vertical conduction silicon carbide electronic device and vertical conduction silicon carbide electronic device having improved mechanical stabilityST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
- 1239US2022415655A1Process for manufacturing a vertical conduction silicon carbide electronic device and vertical conduction silicon carbide electronic deviceST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
- 1335US6090669AFabrication method for high voltage devices with at least one deep edge ringCONS RIC MICROELETTRONICA·Filed 1996·Granted Jul 18, 2000·7 cites·37 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →