Inventor · disambiguated record
Gianpaolo Spadini
Also filed as: SPADINI GIANPAOLO · SPADINI GIANPAOLO PAOLO
42 granted patents·6 pending applications·473 citations·filing 1995–2020
98Inventor score
Top patents by PatentIndex Score
48 records- 0199US9590012B2Self-aligned cross-point phase change memory-switch arrayMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 7, 2017·29 cites·14 claims
- 0297US9576659B2Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2016·Granted Feb 21, 2017·13 cites·20 claims
- 0397US9368554B2Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2015·Granted Jun 14, 2016·15 cites·20 claims
- 0497US9245926B2Apparatuses and methods including memory access in cross point memoryKAU DERCHANG·Filed 2012·Granted Jan 26, 2016·28 cites·17 claims
- 0597US8765581B2Self-aligned cross-point phase change memory-switch arrayLEE JONG WON·Filed 2012·Granted Jul 1, 2014·27 cites·11 claims
- 0697US8462537B2Method and apparatus to reset a phase change memory and switch (PCMS) memory cellKARPOV ELIJAH V·Filed 2011·Granted Jun 11, 2013·53 cites·13 claims
- 0796US8404514B2Fabricating current-confining structures in phase change memory switch cellsLEE JONG-WON SEAN·Filed 2012·Granted Mar 26, 2013·31 cites·21 claims
- 0896US8385100B2Energy-efficient set write of phase change memory with switchINTEL CORP·Filed 2009·Granted Feb 26, 2013·77 cites·17 claims
- 0995US9734907B2Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 15, 2017·8 cites·20 claims
- 1095US8345472B2Three-terminal ovonic threshold switch as a current driver in a phase change memoryINTEL CORP·Filed 2010·Granted Jan 1, 2013·26 cites·12 claims
- 1194US9905296B2Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 27, 2018·6 cites·20 claims
- 1293US9306165B2Replacement materials processes for forming cross point memoryMICRON TECHNOLOGY INC·Filed 2014·Granted Apr 5, 2016·12 cites·46 claims
- 1392US10090050B2Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 2, 2018·4 cites·20 claims
- 1490US9543003B2Memory array plane selectMICRON TECHNOLOGY INC·Filed 2015·Granted Jan 10, 2017·9 cites·20 claims
- 1586US9021227B2Drift management in a phase change memory and switch (PCMS) memory deviceKARPOV ELIJAH V·Filed 2011·Granted Apr 28, 2015·10 cites·18 claims
- 1685US9117503B2Memory array plane select and methodsLEE JONG-WON·Filed 2012·Granted Aug 25, 2015·8 cites·14 claims
- 1783US10050084B2Replacement materials processes for forming cross point memoryMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 14, 2018·4 cites·20 claims
- 1882US8971089B2Low power phase change memory cellKARPOV ELIJAH V·Filed 2012·Granted Mar 3, 2015·4 cites·22 claims
- 1980US10163507B1Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2018·Granted Dec 25, 2018·1 cites·20 claims
- 2080US8278641B2Fabricating current-confining structures in phase change memory switch cellsLEE JONG-WON SEAN·Filed 2009·Granted Oct 2, 2012·6 cites·7 claims
- 2180US7990761B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2008·Granted Aug 2, 2011·7 cites·76 claims
- 2278US9659997B2Replacement materials processes for forming cross point memoryMICRON TECHNOLOGY INC·Filed 2016·Granted May 23, 2017·3 cites·18 claims
- 2378US9036409B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2014·Granted May 19, 2015·3 cites·10 claims
- 2478US6219279B1Non-volatile memory program driver and read reference circuitsZILOG INC·Filed 1999·Granted Apr 17, 2001·44 cites·11 claims
- 2576US10475853B2Replacement materials processes for forming cross point memoryMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 12, 2019·2 cites·18 claims
- 2670US11563055B2Self-aligned cross-point phase change memory-switch arrayMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 24, 2023·0 cites·20 claims
- 2767US10783965B2Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 22, 2020·0 cites·20 claims
- 2867US6504191B2Independently programmable memory segments within a PMOS electrically erasable programmable read only memory array achieved by N-well separation and method thereforMICROCHIP TECH INC·Filed 2001·Granted Jan 7, 2003·11 cites·13 claims
- 2966US10304534B2Apparatuses and methods including memory access in cross point memoryMICRON TECHNOLOGY INC·Filed 2018·Granted May 28, 2019·0 cites·20 claims
- 3063US9570163B2Immunity of phase change material to disturb in the amorphous phaseOVONYX MEMORY TECH LLC·Filed 2015·Granted Feb 14, 2017·1 cites·11 claims
- 3162US8184469B2Stored multi-bit data characterized by multiple-dimensional memory statesKALB JOHANNES A·Filed 2009·Granted May 22, 2012·5 cites·16 claims
- 3260US10692930B2Self-aligned cross-point phase change memory-switch arrayMICRON TECHNOLOGY INC·Filed 2017·Granted Jun 23, 2020·0 cites·13 claims
- 3357US6300183B1Independently programmable memory segments within a PMOS electrically erasable programmable read only memory array achieved by N-well separation and method thereforMICROCHIP TECH INC·Filed 1999·Granted Oct 9, 2001·14 cites·6 claims
- 3456US8634226B2Immunity of phase change material to disturb in the amorphous phaseGORDON GEORGE·Filed 2011·Granted Jan 21, 2014·1 cites·5 claims
- 3553US9251895B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2014·Granted Feb 2, 2016·0 cites·5 claims
- 3652US8945403B2Material test structurePELLIZZER FABIO·Filed 2012·Granted Feb 3, 2015·0 cites·17 claims
- 3752US8861293B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2013·Granted Oct 14, 2014·0 cites·5 claims
- 3849US9645102B2Material test structureMICRON TECHNOLOGY INC·Filed 2015·Granted May 9, 2017·0 cites·19 claims
- 3948US9203024B2Copper compatible chalcogenide phase change memory with adjustable threshold voltageKIM YUDONG·Filed 2007·Granted Dec 1, 2015·0 cites·25 claims
- 4046US5733795AMethod of fabricating a MOS read-only semiconductor memory arrayMICROCHIP TECH INC·Filed 1996·Granted Mar 31, 1998·9 cites·9 claims
- 4146US2009196091A1Self-aligned phase change memoryKAU DERCHANG·Filed 2008·Application pending·0 cites
- 4244US9412939B2Forming sublithographic heaters for phase change memoriesLEE JONG-WON S·Filed 2012·Granted Aug 9, 2016·0 cites·8 claims
- 4344US2008090324A1Forming sublithographic heaters for phase change memoriesLEE JONG-WON S·Filed 2006·Application pending·0 cites
- 4444US2007233937A1Reliability of write operations to a non-volatile memoryCOULSON RICHARD L·Filed 2006·Application pending·0 cites
- 4541US2009302298A1Forming sublithographic phase change memory heatersLEE JONG-WON S·Filed 2008·Application pending·0 cites
- 4637US2010165716A1Nonvolatile memory with ovonic threshold switchesST MICROELECTRONICS SRL·Filed 2008·Application pending·0 cites
- 4729US5644154AMOS read-only semiconductor memory with selected source/drain regions spaced away from edges of overlying gate electrode regions and method thereforMICROCHIP TECH INC·Filed 1995·Granted Jul 1, 1997·2 cites·14 claims
- 4825US2012002461A1Non-volatile memory with ovonic threshold switch and resistive memory elementKARPOV ELIJAH I·Filed 2010·Application pending·0 cites
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