Inventor · disambiguated record
Gowrishankar L. Chindalore
Also filed as: CHINDALORE GOWRISHANKAR · CHINDALORE GOWRISHANKAR L · CHINDALORE GOWRISHANKAR L G
65 granted patents·3 pending applications·730 citations·filing 2001–2012
99Inventor score
Top patents by PatentIndex Score
68 records- 0196US7544980B2Split gate memory cell in a FinFETFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jun 9, 2009·43 cites·20 claims
- 0294US7132329B1Source side injection storage device with spacer gates and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 7, 2006·22 cites·6 claims
- 0392US7250340B2Method of fabricating programmable structure including discontinuous storage elements and spacer control gates in a trenchFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 31, 2007·24 cites·20 claims
- 0492US6887758B2Non-volatile memory device and method for formingFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 3, 2005·70 cites·29 claims
- 0589US6713812B1Non-volatile memory device having an anti-punch through (APT) regionMOTOROLA INC·Filed 2002·Granted Mar 30, 2004·48 cites·21 claims
- 0688US8163615B1Split-gate non-volatile memory cell having improved overlap tolerance and method thereforWHITE TED R·Filed 2011·Granted Apr 24, 2012·11 cites·17 claims
- 0788US7206214B2One time programmable memory and method of operationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 17, 2007·20 cites·20 claims
- 0888US6991984B2Method for forming a memory structure using a modified surface topography and structure thereofFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 31, 2006·44 cites·27 claims
- 0988US6839280B1Variable gate bias for a reference transistor in a non-volatile memoryFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jan 4, 2005·43 cites·19 claims
- 1087US8173505B2Method of making a split gate memory cellHERRICK MATTHEW T·Filed 2008·Granted May 8, 2012·21 cites·10 claims
- 1187US7226840B2Process for forming an electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jun 5, 2007·15 cites·20 claims
- 1285US7205608B2Electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 17, 2007·12 cites·19 claims
- 1384US7491600B2Nanocrystal bitcell process integration for high density applicationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Feb 17, 2009·11 cites·24 claims
- 1483US7745344B2Method for integrating NVM circuitry with logic circuitryFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jun 29, 2010·10 cites·10 claims
- 1583US7592224B2Method of fabricating a storage device including decontinuous storage elements within and between trenchesFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Sep 22, 2009·10 cites·20 claims
- 1683US7091130B1Method of forming a nanocluster charge storage deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Aug 15, 2006·32 cites·22 claims
- 1782US7399675B2Electronic device including an array and process for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 15, 2008·16 cites·11 claims
- 1882US7151302B1Method and apparatus for maintaining topographical uniformity of a semiconductor memory arrayFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Dec 19, 2006·9 cites·15 claims
- 1981US7619270B2Electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 17, 2009·9 cites·20 claims
- 2081US7211487B2Process for forming an electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 1, 2007·13 cites·20 claims
- 2180US8035156B2Split-gate non-volatile memory cell and methodFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Oct 11, 2011·8 cites·18 claims
- 2279US7314798B2Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programmingFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jan 1, 2008·8 cites·20 claims
- 2378US6964902B2Method for removing nanoclusters from selected regionsFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Nov 15, 2005·20 cites·26 claims
- 2477US8178406B2Split gate device and method for formingKANG SUNG-TAEG·Filed 2007·Granted May 15, 2012·7 cites·12 claims
- 2577US7195983B2Programming, erasing, and reading structure for an NVM cellFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Mar 27, 2007·21 cites·27 claims
- 2676US7256454B2Electronic device including discontinuous storage elements and a process for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 14, 2007·6 cites·20 claims
- 2775US7371626B2Method for maintaining topographical uniformity of a semiconductor memory arrayFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted May 13, 2008·5 cites·20 claims
- 2875US7115949B2Method of forming a semiconductor device in a semiconductor layer and structure thereofFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Oct 3, 2006·20 cites·12 claims
- 2973US6969883B2Non-volatile memory having a reference transistorFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Nov 29, 2005·15 cites·17 claims
- 3072US7838363B2Method of forming a split gate non-volatile memory cellFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Nov 23, 2010·5 cites·7 claims
- 3172US7285819B2Nonvolatile storage array with continuous control gate employing hot carrier injection programmingFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Oct 23, 2007·5 cites·9 claims
- 3271US7764550B2Method of programming a non-volatile memoryFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Jul 27, 2010·8 cites·20 claims
- 3371US6760270B2Erase of a non-volatile memoryMOTOROLA INC·Filed 2002·Granted Jul 6, 2004·17 cites·24 claims
- 3470US7550348B2Source side injection storage device with spacer gates and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jun 23, 2009·3 cites·15 claims
- 3570US7394686B2Programmable structure including discontinuous storage elements and spacer control gates in a trenchFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 1, 2008·4 cites·20 claims
- 3670US7262997B2Process for operating an electronic device including a memory array and conductive linesFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 28, 2007·6 cites·8 claims
- 3769US7642594B2Electronic device including gate lines, bit lines, or a combination thereofFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jan 5, 2010·5 cites·19 claims
- 3869US7582929B2Electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 1, 2009·4 cites·15 claims
- 3966US7471560B2Electronic device including a memory array and conductive linesFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Dec 30, 2008·5 cites·19 claims
- 4066US7235823B2Source side injection storage device with spacer gates and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jun 26, 2007·2 cites·20 claims
- 4165US7619275B2Process for forming an electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 17, 2009·3 cites·20 claims
- 4265US7064030B2Method for forming a multi-bit non-volatile memory deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 20, 2006·9 cites·21 claims
- 4363US7679125B2Back-gated semiconductor device with a storage layer and methods for forming thereofFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Mar 16, 2010·2 cites·14 claims
- 4463US7649781B2Bit cell reference device and methods thereofFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jan 19, 2010·5 cites·20 claims
- 4563US7622349B2Floating gate non-volatile memory and method thereofFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 24, 2009·2 cites·19 claims
- 4662US7317222B2Memory cell using a dielectric having non-uniform thicknessFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jan 8, 2008·2 cites·22 claims
- 4762US6898128B2Programming of a memory with discrete charge storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted May 24, 2005·9 cites·21 claims
- 4861US7642163B2Process of forming an electronic device including discontinuous storage elements within a dielectric layerFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jan 5, 2010·2 cites·20 claims
- 4961US7378314B2Source side injection storage device with control gates adjacent to shared source/drain and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 27, 2008·2 cites·14 claims
- 5060US8679912B2Semiconductor device having different non-volatile memories having nanocrystals of differing densities and method thereforKANG SUNG-TAEG·Filed 2012·Granted Mar 25, 2014·1 cites·20 claims
Showing the top 50 of 68 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →