Inventor · disambiguated record
Gourab Majumdar
Also filed as: MAJUMDAR GOURAB
45 granted patents·1,341 citations·filing 1985–2011
99Inventor score
Top patents by PatentIndex Score
45 records- 0193US5703399ASemiconductor power moduleMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 30, 1997·170 cites·20 claims
- 0293US5623152AInsulated gate semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 22, 1997·244 cites·10 claims
- 0390US4903106ASemiconductor power device integrated with temperature protection meansMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Feb 20, 1990·58 cites·6 claims
- 0489US6724169B2Controller for power device and drive controller for motorMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Apr 20, 2004·34 cites·17 claims
- 0589USD421969SSemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Mar 28, 2000·36 cites·1 claims
- 0688US6762937B2Power moduleMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jul 13, 2004·41 cites·2 claims
- 0787US5055721ADrive circuit for igbt deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Oct 8, 1991·42 cites·13 claims
- 0884US6522544B1Power moduleMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 18, 2003·31 cites·5 claims
- 0984USD418485SSemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jan 4, 2000·26 cites·1 claims
- 1084US5432471AInsulated gate semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jul 11, 1995·52 cites·28 claims
- 1181US6900986B2Power moduleRYODEN SEMICONDUCTOR SYST ENG·Filed 2004·Granted May 31, 2005·25 cites·4 claims
- 1281US6208041B1Drive control device, module and combined moduleMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Mar 27, 2001·41 cites·14 claims
- 1380US4914540AOvervoltage-protective deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Apr 3, 1990·27 cites·3 claims
- 1479US7423391B2Power conversion device and vehicle equipped therewithTOYOTA MOTOR CO LTD·Filed 2005·Granted Sep 9, 2008·16 cites·24 claims
- 1579US5834842ASemiconductor device, semiconductor module, and radiating finMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 10, 1998·58 cites·15 claims
- 1675US6639295B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 28, 2003·22 cites·3 claims
- 1775US6005366AController for power device and drive controller for motorMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Dec 21, 1999·25 cites·17 claims
- 1874US4672245AHigh frequency diverse semiconductor switchMITSUBISHI ELECTRIC CORP·Filed 1985·Granted Jun 9, 1987·20 cites·4 claims
- 1973US6522098B1Controller for power device and drive controller for motorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 18, 2003·23 cites·5 claims
- 2072USD428859SSemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Aug 1, 2000·16 cites·1 claims
- 2169US4941030ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Jul 10, 1990·26 cites·8 claims
- 2268US6529062B2Power moduleMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Mar 4, 2003·15 cites·8 claims
- 2367US5672910ASemiconductor device and semiconductor moduleMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 30, 1997·36 cites·18 claims
- 2467US4841345AModified conductivity modulated MOSFETMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Jun 20, 1989·23 cites·3 claims
- 2566US7235857B2Power semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 26, 2007·14 cites·4 claims
- 2665US6452365B1Power converter with increased breakdown voltage maintaining stable operationMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 17, 2002·12 cites·13 claims
- 2765US5747876ASemiconductor device and semiconductor moduleMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 5, 1998·32 cites·20 claims
- 2865US4777386ADriver circuit for a bipolar Darlington power transistorMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Oct 11, 1988·14 cites·11 claims
- 2963US6291826B1Semiconductor element for electric power with a diode for sensing temperature and a diode for absorbing static electricityMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Sep 18, 2001·14 cites·13 claims
- 3063US5773883ASemiconductor device and semiconductor moduleMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jun 30, 1998·30 cites·10 claims
- 3162US8168985B2Semiconductor module including a switch and non-central diodeARAI KIYOSHI·Filed 2009·Granted May 1, 2012·2 cites·9 claims
- 3260US8421087B2Semiconductor module including a switch and non-central diodeARAI KIYOSHI·Filed 2011·Granted Apr 16, 2013·1 cites·8 claims
- 3360US4971921ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Nov 20, 1990·16 cites·3 claims
- 3457US5200638AA semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Apr 6, 1993·16 cites·14 claims
- 3551US5706189AMethod of driving a power converterMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jan 6, 1998·12 cites·3 claims
- 3651US4866313ACascode BiMOS driving circuit using IGBTMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Sep 12, 1989·13 cites·5 claims
- 3746US4902921ADrive circuit for driving cascode bipolar-MOS circuitMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Feb 20, 1990·8 cites·4 claims
- 3845US5686859ASemiconductor switch including a pre-driver with a capacitively isolated power supplyMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 11, 1997·17 cites·11 claims
- 3942US5258641ASemiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Nov 2, 1993·9 cites·6 claims
- 4041US5279977AMethod of manufacturing a semiconductor device for extracting a signal used to monitor potential of a high voltage islandMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jan 18, 1994·7 cites·4 claims
- 4139US4880995AElectrically isolated MOSFET drive circuitMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Nov 14, 1989·4 cites·5 claims
- 4238US5786973ASemiconductor power module and compound power moduleMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 28, 1998·10 cites·20 claims
- 4333US6643155B2Power semiconductor device, power arm and inverter circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 4, 2003·0 cites·16 claims
- 4433US5460981ASemiconductor device having increased current capacityMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 24, 1995·2 cites·16 claims
- 4531US5389801ASemiconductor device having increased current capacityMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Feb 14, 1995·1 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →