Inventor · disambiguated record
Goran Mihajlovic
Also filed as: MIHAJLOVIC GORAN
23 granted patents·5 pending applications·222 citations·filing 2013–2024
95Inventor score
Top patents by PatentIndex Score
28 records- 0198US9953692B1Spin orbit torque MRAM memory cell with enhanced thermal stabilitySANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 24, 2018·46 cites·22 claims
- 0297US10134457B1Cross-point spin accumulation torque MRAMSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Nov 20, 2018·32 cites·20 claims
- 0397US9830966B2Three terminal SOT memory cell with anomalous Hall effectHGST Netherlands BV·Filed 2015·Granted Nov 28, 2017·35 cites·16 claims
- 0496US11839162B2Magnetoresistive memory device including a plurality of reference layersWESTERN DIGITAL TECH INC·Filed 2021·Granted Dec 5, 2023·3 cites·9 claims
- 0596US11361805B2Magnetoresistive memory device including a reference layer side dielectric spacer layerWESTERN DIGITAL TECH INC·Filed 2021·Granted Jun 14, 2022·3 cites·20 claims
- 0695US10388305B1Apparatus and method for writing to magnetic media using an AC bias current to enhance the write fieldWESTERN DIGITAL TECH INC·Filed 2018·Granted Aug 20, 2019·18 cites·20 claims
- 0794US10211393B2Spin accumulation torque MRAMSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Feb 19, 2019·17 cites·18 claims
- 0894US10056430B1MRAM with voltage dependent in-plane magnetic anisotropySANDISK TECHNOLOGIES LLC·Filed 2017·Granted Aug 21, 2018·12 cites·20 claims
- 0993US10777248B1Heat assisted perpendicular spin transfer torque MRAM memory cellWESTERN DIGITAL TECH INC·Filed 2019·Granted Sep 15, 2020·5 cites·18 claims
- 1092US9293160B1Magnetic stabilization and scissor design for anomalous hall effect magnetic read sensorHGST Netherlands BV·Filed 2015·Granted Mar 22, 2016·16 cites·9 claims
- 1190US9099119B2Magnetic read sensor using spin hall effectHGST Netherlands BV·Filed 2013·Granted Aug 4, 2015·12 cites·10 claims
- 1288US10381552B2SOT MRAM cell with perpendicular free layer and its cross-point array realizationHGST Netherlands BV·Filed 2016·Granted Aug 13, 2019·6 cites·7 claims
- 1385US10643642B2Apparatus and method for writing to magnetic media using an AC bias current to enhance the write fieldWESTERN DIGITAL TECH INC·Filed 2019·Granted May 5, 2020·5 cites·23 claims
- 1484US10891999B1Perpendicular SOT MRAMWESTERN DIGITAL TECH INC·Filed 2019·Granted Jan 12, 2021·2 cites·19 claims
- 1583US10290337B2Three terminal SOT memory cell with anomalous hall effectWESTERN DIGITAL TECH INC·Filed 2017·Granted May 14, 2019·3 cites·16 claims
- 1678US9429633B2Magnetic sensor utilizing rashba effect in a two-dimensional conductorHGST Netherlands BV·Filed 2013·Granted Aug 30, 2016·3 cites·15 claims
- 1775US11004489B2Perpendicular spin transfer torque MRAM memory cell with in-stack thermal barriersWESTERN DIGITAL TECH INC·Filed 2019·Granted May 11, 2021·1 cites·15 claims
- 1872US10957346B2Magnetic recording devices and methods using a write-field-enhancement structure and bias current with offset pulsesWESTERN DIGITAL TECH INC·Filed 2020·Granted Mar 23, 2021·1 cites·28 claims
- 1968US10276783B2Gate voltage controlled perpendicular spin orbit torque MRAM memory cellSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 30, 2019·2 cites·18 claims
- 2064US11968907B2Magnetoresistive memory device including a magnetoresistance amplification layerWESTERN DIGITAL TECH INC·Filed 2022·Granted Apr 23, 2024·0 cites·20 claims
- 2162US9177576B2Giant magneto resistive sensor and method for making sameHGST Netherlands BV·Filed 2013·Granted Nov 3, 2015·0 cites·14 claims
- 2260US2025380616A1Stt mram device with perpendicular exchange bias layer in contact with free layerSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 2358US2025285669A1Magnetic tunnel junction with dual reference layers having parallel magnetization directions and methods for operating the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 2454US2025384926A1Magnetoresistive memory devices including dual free layers and methods for making and operating the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 2550US10832750B2Perpendicular spin transfer torque MRAM memory cell with cap layer to achieve lower current density and increased write marginSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Nov 10, 2020·0 cites·14 claims
- 2650US2025384909A1Magnetoresistive memory devices including dual free layers and methods for making and operating the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 2746US2015287426A1Magnetic read head having spin hall effect layerHGST Netherlands BV·Filed 2014·Application pending·0 cites
- 2843US10726893B2Perpendicular SOT-MRAM memory cell using spin swapping induced spin currentSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 28, 2020·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →