Inventor · disambiguated record
Gongda Yao
Also filed as: YAO GONGDA
31 granted patents·6 pending applications·957 citations·filing 1997–2016
98Inventor score
Top patents by PatentIndex Score
37 records- 0197US7253109B2Method of depositing a tantalum nitride/tantalum diffusion barrier layer systemAPPLIED MATERIALS INC·Filed 2005·Granted Aug 7, 2007·44 cites·67 claims
- 0297US6919275B2Method of preventing diffusion of copper through a tantalum-comprising barrier layerAPPLIED MATERIALS INC·Filed 2004·Granted Jul 19, 2005·87 cites·4 claims
- 0394US6758947B2Damage-free sculptured coating depositionAPPLIED MATERIALS INC·Filed 2001·Granted Jul 6, 2004·47 cites·29 claims
- 0492US7381639B2Method of depositing a metal seed layer on semiconductor substratesAPPLIED MATERIALS INC·Filed 2006·Granted Jun 3, 2008·10 cites·13 claims
- 0592US5985759AOxygen enhancement of ion metal plasma (IMP) sputter deposited barrier layersAPPLIED MATERIALS INC·Filed 1998·Granted Nov 16, 1999·120 cites·14 claims
- 0691US9390970B2Method for depositing a diffusion barrier layer and a metal conductive layerCHIANG TONY·Filed 2007·Granted Jul 12, 2016·10 cites·69 claims
- 0791US6939801B2Selective deposition of a barrier layer on a dielectric materialAPPLIED MATERIALS INC·Filed 2002·Granted Sep 6, 2005·56 cites·43 claims
- 0891US6271592B1Sputter deposited barrier layersAPPLIED MATERIALS INC·Filed 1999·Granted Aug 7, 2001·104 cites·14 claims
- 0990US7074714B2Method of depositing a metal seed layer on semiconductor substratesAPPLIED MATERIALS INC·Filed 2004·Granted Jul 11, 2006·26 cites·3 claims
- 1087US6207558B1Barrier applications for aluminum planarizationAPPLIED MATERIALS INC·Filed 1999·Granted Mar 27, 2001·77 cites·34 claims
- 1187US6045666AAluminum hole filling method using ionized metal adhesion layerAPPLIED MATERIALS INC·Filed 1997·Granted Apr 4, 2000·61 cites·31 claims
- 1286US6368880B2Barrier applications for aluminum planarizationAPPLIED MATERIALS INC·Filed 2001·Granted Apr 9, 2002·33 cites·16 claims
- 1383US7687909B2Metal / metal nitride barrier layer for semiconductor device applicationsAPPLIED MATERIALS INC·Filed 2007·Granted Mar 30, 2010·7 cites·13 claims
- 1483US5911113ASilicon-doped titanium wetting layer for aluminum plugAPPLIED MATERIALS INC·Filed 1997·Granted Jun 8, 1999·65 cites·13 claims
- 1582US6528180B1Liner materialsAPPLIED MATERIALS INC·Filed 2000·Granted Mar 4, 2003·26 cites·12 claims
- 1680US7989343B2Method of depositing a uniform metal seed layer over a plurality of recessed semiconductor featuresAPPLIED MATERIALS INC·Filed 2010·Granted Aug 2, 2011·2 cites·13 claims
- 1777US6299689B1Reflow chamber and processAPPLIED MATERIALS INC·Filed 2000·Granted Oct 9, 2001·23 cites·3 claims
- 1876US7795138B2Method of depositing a metal seed layer over recessed feature surfaces in a semiconductor substrateAPPLIED MATERIALS INC·Filed 2009·Granted Sep 14, 2010·2 cites·16 claims
- 1976US6238533B1Integrated PVD system for aluminum hole filling using ionized metal adhesion layerAPPLIED MATERIALS INC·Filed 1997·Granted May 29, 2001·33 cites·22 claims
- 2076US6110821AMethod for forming titanium silicide in situAPPLIED MATERIALS INC·Filed 1998·Granted Aug 29, 2000·37 cites·12 claims
- 2173US8158511B2Method of depositing a uniform barrier layer and metal seed layer with reduced overhang over a plurality of recessed semiconductor featuresCHIANG TONY·Filed 2011·Granted Apr 17, 2012·1 cites·11 claims
- 2272US6077402ACentral coil design for ionized metal plasma depositionAPPLIED MATERIALS INC·Filed 1997·Granted Jun 20, 2000·24 cites·52 claims
- 2364US9991157B2Method for depositing a diffusion barrier layer and a metal conductive layerAPPLIED MATERIALS INC·Filed 2016·Granted Jun 5, 2018·0 cites·15 claims
- 2464US6908865B2Method and apparatus for cleaning substratesAPPLIED MATERIALS INC·Filed 2001·Granted Jun 21, 2005·10 cites·6 claims
- 2560US7589016B2Method of depositing a sculptured copper seed layerAPPLIED MATERIALS INC·Filed 2008·Granted Sep 15, 2009·0 cites·7 claims
- 2655US2009053888A1Method of depositing a diffusion barrier layer which provides an improved interconnectAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 2754US6077404AReflow chamber and processAPPLIED MATERIAL INC·Filed 1998·Granted Jun 20, 2000·17 cites·14 claims
- 2853US6451179B1Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasmaAPPLIED MATERIALS INC·Filed 1997·Granted Sep 17, 2002·18 cites·32 claims
- 2948US2005272254A1Method of depositing low resistivity barrier layers for copper interconnectsAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 3047US6303994B1Method and apparatus for reducing the first wafer effectAPPLIED MATERIALS INC·Filed 2000·Granted Oct 16, 2001·2 cites·19 claims
- 3146US2005020080A1Method of depositing a diffusion barrier layer and a metal conductive layerFiled 2004·Application pending·0 cites
- 3238US6383915B1Tailoring of a wetting/barrier layer to reduce electromigration in an aluminum interconnectAPPLIED MATERIALS INC·Filed 1999·Granted May 7, 2002·8 cites·48 claims
- 3338US6139698AMethod and apparatus for reducing the first wafer effectAPPLIED MATERIALS INC·Filed 1997·Granted Oct 31, 2000·6 cites·11 claims
- 3437US2002192948A1Integrated barrier layer structure for copper contact level metallizationAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 3537US2003131458A1Apparatus and method for improving throughput in a cluster tool for semiconductor wafer processingAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 3636US2002142589A1Method of obtaining low temperature alpha-ta thin films using wafer biasAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 3731US6232665B1Silicon-doped titanium wetting layer for aluminum plugAPPLIED MATERIALS INC·Filed 1999·Granted May 15, 2001·1 cites·12 claims
Join the waitlist — get patent alerts
Get an alert when Gongda Yao files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →