Inventor · disambiguated record

Guan-Jie Shen

Also filed as: SHEN GUAN-JIE

34 granted patents·13 pending applications·46 citations·filing 2002–2025

95Inventor score

Technology areasH10P H10D H10W B82Y

Files withTAIWAN SEMICONDUCTOR MFG CO LTD44 TAIWAN SEMICONDUCTOR MFG2 TAIWAN SEMICONDUCTOR MFG CO LID1

Top patents by PatentIndex Score

47 records

0196US11757023B2Semiconductor device and method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·2 cites·20 claims
0294US11404274B2Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
0392US10141431B1Epitaxy source/drain regions of FinFETs and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·13 cites·20 claims
0491US11923439B2Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·1 cites·20 claims
0591US11862714B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·2 cites·20 claims
0691US10276680B2Gate feature in FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·4 cites·19 claims
0789US10665686B2Gate feature in finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 26, 2020·3 cites·20 claims
0887US10777664B2Epitaxy source/drain regions of FinFETs and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 15, 2020·5 cites·20 claims
0984US12288815B2Source/drain structure with enhanced dopant diffusion for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 29, 2025·0 cites·20 claims
1084US2025081496A1Semiconductor device and method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1183US11121238B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·3 cites·20 claims
1282US12490454B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 2, 2025·0 cites·20 claims
1382US12176421B2Semiconductor device and method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
1481US11793003B2Semiconductor structure with embedded memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 17, 2023·1 cites·20 claims
1581US2023207649A1Novel gate feature in finfet deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
1680US2025366123A1Semiconductor devices with modulated gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1780US2025234576A1Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1879US11232989B2Devices with adjusted fin profile and methods for manufacturing devices with adjusted fin profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 25, 2022·2 cites·20 claims
1978US12219781B2Semiconductor structure with embedded memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
2078US2025120096A1Semiconductor structure with embedded memory deviceTAIWAN SEMICONDUCTOR MFG CO LID·Filed 2024·Application pending·0 cites
2177US2025344448A1Multigate Device Structure with Engineered GateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2275US11961911B2Semiconductor devices including channel regions having non-uniform Ge concentrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·21 claims
2375US11594607B2Gate feature in FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·0 cites·20 claims
2474US12501640B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
2573US10910479B2Gate feature in FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 2, 2021·0 cites·20 claims
2673US2024387633A1Semiconductor devices having parasitic channel structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2773US2024405075A1Semiconductor devices having counter-doped structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2873US2024379755A1Semiconductor devices with counter-doped nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2972US2025366048A1Buried gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3072US2024379877A1Surface-doped channels for threshold voltage modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3171US12484251B2Multigate device structure with engineered gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
3270US11538926B2Semiconductor device and method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 27, 2022·0 cites·20 claims
3369US2022359768A1Surface-Doped Channels for Threshold Voltage ModulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
3468US12300718B2Semiconductor devices with counter-doped nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 13, 2025·0 cites·20 claims
3566US12249623B2Semiconductor devices having parasitic channel structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 11, 2025·0 cites·20 claims
3663US2022336587A1Semiconductor devices having counter-doped structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
3762US12062581B2Devices with adjusted fin profile and methods for manufacturing devices with adjusted fin profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
3862US11296227B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 5, 2022·0 cites·20 claims
3958US12464772B2Buried gate structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 4, 2025·0 cites·20 claims
4057US10115596B2Method of fabricating a semiconductor device having a T-shape in the metal gate line-endTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 30, 2018·0 cites·20 claims
4155US9330967B2Method of fabricating a semiconductor device with reduced leak pathsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 3, 2016·0 cites·18 claims
4254US9780213B2Semiconductor device having a reversed T-shaped profile in the metal gate line-endTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 3, 2017·0 cites·20 claims
4352US9978640B2Method of fabricating a semiconductor device with reduced leak pathsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 22, 2018·0 cites·20 claims
4451US11322603B2Anti-punch-through doping on source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·0 cites·20 claims
4551US6602747B1Method for fabricating bipolar complementary metal oxide semiconductor (BiCMOS) device structureTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 5, 2003·7 cites·14 claims
4650US11211479B2Method of fabricating trimmed fin and fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 28, 2021·0 cites·20 claims
4745US10763280B2Hybrid FinFET structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·0 cites·19 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →