Inventor · disambiguated record
Guowei Xu
Also filed as: XU GUOWEI
35 granted patents·61 pending applications·87 citations·filing 2004–2025
95Inventor score
Top patents by PatentIndex Score
96 records- 0196US10410933B2Replacement metal gate patterning for nanosheet devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 10, 2019·17 cites·18 claims
- 0296US10373877B1Methods of forming source/drain contact structures on integrated circuit productsGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 6, 2019·18 cites·20 claims
- 0393US10153209B1Insulating gate separation structure and methods of making sameGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 11, 2018·8 cites·13 claims
- 0489USD965577SMobile phone caseXU GUOWEI·Filed 2022·Granted Oct 4, 2022·17 cites·1 claims
- 0585US10692987B2IC structure with air gap adjacent to gate structure and methods of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 23, 2020·4 cites·20 claims
- 0683US11655641B2Construction building equipment and construction method thereofTHE THIRD CONSTRUCTION CO LTD OF CHINA CONSTRUCTION THIRD ENGNEERING BUREAU·Filed 2020·Granted May 23, 2023·4 cites·5 claims
- 0783US10580875B2Middle of line structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 3, 2020·3 cites·20 claims
- 0883US10068902B1Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 4, 2018·4 cites·4 claims
- 0981US10872979B2Spacer structures for a transistor deviceGLOBALFOUNDRIES INC·Filed 2020·Granted Dec 22, 2020·1 cites·17 claims
- 1081US10734233B2FinFET with high-k spacer and self-aligned contact capping layerGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 4, 2020·3 cites·14 claims
- 1177US10879180B2FinFET with etch-selective spacer and self-aligned contact capping layerGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 29, 2020·2 cites·13 claims
- 1273US9722110B2Plasmonic graphene and method of making the sameUNIV KANSAS·Filed 2012·Granted Aug 1, 2017·2 cites·19 claims
- 1372US10629739B2Methods of forming spacers adjacent gate structures of a transistor deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 21, 2020·1 cites·19 claims
- 1471US10534924B2Software handling device, server system and methods thereofHUAWEI TECH CO LTD·Filed 2017·Granted Jan 14, 2020·1 cites·15 claims
- 1571US2025324690A1Nanoribbon-based transistors with etch stop layer to assist subfin removalINTEL CORP·Filed 2025·Application pending·0 cites
- 1670US2025323127A1Integrated circuit structure with deep via bar width tuningINTEL CORP·Filed 2025·Application pending·0 cites
- 1769US10818659B2FinFET having upper spacers adjacent gate and source/drain contactsGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 27, 2020·1 cites·20 claims
- 1868US10522538B1Using source/drain contact cap during gate cutGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 31, 2019·1 cites·19 claims
- 1965US10978566B2Middle of line structuresGLOBALFOUNDRIES US INC·Filed 2020·Granted Apr 13, 2021·0 cites·18 claims
- 2065US2025112120A1Integrated circuit structure with deep via bar width tuningINTEL CORP·Filed 2023·Application pending·0 cites
- 2163US11321098B2Multi-operating system device, notification device and methods thereofHUAWEI TECH CO LTD·Filed 2020·Granted May 3, 2022·0 cites·20 claims
- 2261US10878114B2Software handling device, server system and methods thereofHUAWEI TECH CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·15 claims
- 2360US2024290835A1Nanoribbon-based transistors with etch stop layer to assist subfin removalINTEL CORP·Filed 2023·Application pending·0 cites
- 2460US2025311273A1Zero diffusion break for improving transistor densityINTEL CORP·Filed 2024·Application pending·0 cites
- 2559US10658363B2Cut inside replacement metal gate trench to mitigate N-P proximity effectGLOBALFOUNDRIES INC·Filed 2019·Granted May 19, 2020·0 cites·15 claims
- 2658US12271225B2Mobile terminal protective shellSHENZHEN YUANFEI TECH CO LTD·Filed 2024·Granted Apr 8, 2025·0 cites·20 claims
- 2758US2025391774A1Contact over active gate structures with gate recess for gate insulating cap layers for advanced integrated circuit structure fabricationINTEL CORP·Filed 2024·Application pending·0 cites
- 2858US2025308982A1Self-aligned patterned trench isolations for yield and performance improvementsINTEL CORP·Filed 2024·Application pending·0 cites
- 2958US2025386580A1Integrated circuit structures with backside isolation structureINTEL CORP·Filed 2024·Application pending·0 cites
- 3058US2025386578A1Contact over active gate structures with widened and lower capacitance insulating cap layers for advanced integrated circuit structure fabricationINTEL CORP·Filed 2024·Application pending·0 cites
- 3157US2025311272A1Gate-all-around devices with modulated number of active nanoribbonsINTEL CORP·Filed 2024·Application pending·0 cites
- 3257US2025311428A1Ribbon complementary fet (cfet) metal gate multi-voltage threshold integrationINTEL CORP·Filed 2024·Application pending·0 cites
- 3357US2025311427A1Deep via backside (dvb) partial recess for capacitance reduction in complementary fet (cfet) transistorsINTEL CORP·Filed 2024·Application pending·0 cites
- 3456US10431499B2Insulating gate separation structureGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 1, 2019·0 cites·13 claims
- 3556US2025311353A1Dielectric wall used to separate gate dielectric between adjacent devicesINTEL CORP·Filed 2024·Application pending·0 cites
- 3656US2025311404A1Backside-patterned fin isolation structures between semiconductor devicesINTEL CORP·Filed 2024·Application pending·0 cites
- 3756US2025393250A1Integrated circuit structures having hybrid channel layoutINTEL CORP·Filed 2024·Application pending·0 cites
- 3855US2025311363A1Backside gate cut formationINTEL CORP·Filed 2024·Application pending·0 cites
- 3955US2025194211A1Conductive via with front-side and back-side connections with a source or drain regionINTEL CORP·Filed 2023·Application pending·0 cites
- 4055US2025142948A1Integrated circuit devices with self-aligned via-to-jumper connectionsINTEL CORP·Filed 2023·Application pending·0 cites
- 4154US10446550B2Cut inside replacement metal gate trench to mitigate N-P proximity effectGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 15, 2019·0 cites·17 claims
- 4254US2025212463A1Metal-all-around contact structure coupled with a source or drain regionINTEL CORP·Filed 2023·Application pending·0 cites
- 4354US2025204000A1Integrated circuit device with co-metalized electrical contactINTEL CORP·Filed 2023·Application pending·0 cites
- 4454US2025107212A1Airgap spacer between gate electrode and source or drain contactINTEL CORP·Filed 2023·Application pending·0 cites
- 4554US2025176255A1Back-side nanoribbon removalINTEL CORP·Filed 2023·Application pending·0 cites
- 4654US2025212470A1Integrated circuit device with backside isolaton regionINTEL CORP·Filed 2023·Application pending·0 cites
- 4754US2025204035A1Integrated circuit device with dielectric cut at n-p boundaryINTEL CORP·Filed 2023·Application pending·0 cites
- 4854US2025098260A1Integrated circuit structures with patch spacersINTEL CORP·Filed 2023·Application pending·0 cites
- 4954US2025113559A1Trench contact structure with etch-stop layerINTEL CORP·Filed 2023·Application pending·0 cites
- 5054US2025096114A1Via structure with improved substrate groundingINTEL CORP·Filed 2023·Application pending·0 cites
Showing the top 50 of 96 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →