Inventor · disambiguated record
Gwan-Hyeob Koh
Also filed as: KOH GWAN-HYEOB
69 granted patents·4 pending applications·869 citations·filing 1999–2021
99Inventor score
Top patents by PatentIndex Score
73 records- 0199US10157951B2CMOS image sensor (CIS) including MRAM (magnetic random access memory)SAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 18, 2018·51 cites·16 claims
- 0298US11482285B2Integrated circuit devices and methods of manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 25, 2022·6 cites·5 claims
- 0398US9741764B1Memory device including ovonic threshold switch adjusting threshold voltage thereofSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 22, 2017·37 cites·20 claims
- 0498US7843718B2Non-volatile memory devices including stacked NAND-type resistive memory cell strings and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 30, 2010·238 cites·23 claims
- 0597US9941333B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 10, 2018·23 cites·20 claims
- 0697US9716129B1Memory device and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 25, 2017·25 cites·20 claims
- 0796US7465675B2Method of forming a phase change memory device having a small area of contactSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 16, 2008·58 cites·20 claims
- 0895US7482616B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 27, 2009·39 cites·67 claims
- 0993US10468103B2Integrated circuit devices including separate memory cells on separate regions of individual substrateKIM SUNG WOO·Filed 2017·Granted Nov 5, 2019·8 cites·6 claims
- 1093US8036018B2Non-volatile memory devices including stacked NAND-type resistive memory cell stringsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 11, 2011·16 cites·20 claims
- 1192US10062840B2Variable resistance memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 28, 2018·8 cites·16 claims
- 1292US9991315B2Memory device including ovonic threshold switch adjusting threshold voltage thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 5, 2018·7 cites·5 claims
- 1391US11532782B2Semiconductor devices including spin-orbit torque line and contact plugSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 20, 2022·2 cites·20 claims
- 1491US9887354B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 6, 2018·6 cites·19 claims
- 1591US6335233B1Method for fabricating MOS transistorSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 1, 2002·130 cites·10 claims
- 1689US10497751B2Memory device and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 3, 2019·4 cites·19 claims
- 1789US9954030B2Semiconductor apparatus including magnetoresistive deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 24, 2018·6 cites·19 claims
- 1889US9853087B2Magnetoresistive random access memory device and method of manufacturing the sameSUH KI-SEOK·Filed 2016·Granted Dec 26, 2017·8 cites·19 claims
- 1988US11183538B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 23, 2021·2 cites·20 claims
- 2088US10833250B2Magnetoresistive random access memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 10, 2020·5 cites·20 claims
- 2188US10566385B2Semiconductor apparatus including magnetoresistive deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 18, 2020·5 cites·20 claims
- 2288US10056543B2Magnetoresistive random access memory device having magnetic tunnel junction and method of manufacturing the sameBAK JUNG HOON·Filed 2016·Granted Aug 21, 2018·10 cites·19 claims
- 2387US8026543B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 27, 2011·12 cites·20 claims
- 2486US10566529B2Memory cell and memory device comprising selection device layer, middle electrode layer and variable resistance layerSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 18, 2020·3 cites·19 claims
- 2585US10263040B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 16, 2019·4 cites·20 claims
- 2683USRE49478EImage sensor including MRAM (magnetic random access memory)SAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 28, 2023·1 cites·40 claims
- 2782US11201192B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 14, 2021·1 cites·20 claims
- 2882US10388859B2Method of manufacturing a magnetoresistive random access memory device and method of manufacturing a semiconductor chip including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 20, 2019·2 cites·20 claims
- 2981US10818727B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 27, 2020·3 cites·20 claims
- 3081US6649490B1Methods for forming integrated circuit devices through selective etching of an insulation layer to increase the self-aligned contact area adjacent a semiconductor region and integrated circuit devices formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 18, 2003·27 cites·16 claims
- 3180US10062841B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 28, 2018·3 cites·27 claims
- 3280US9691459B2Semiconductor memory device including shorted variable resistor element of memory cellSEO BO-YOUNG·Filed 2016·Granted Jun 27, 2017·5 cites·20 claims
- 3379US10319784B2Semiconductor device including variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 11, 2019·2 cites·20 claims
- 3479US8213223B2Multi-level memory devices and methods of operating the sameKOH GWAN-HYEOB·Filed 2008·Granted Jul 3, 2012·10 cites·14 claims
- 3578US10636843B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 28, 2020·2 cites·18 claims
- 3676US11158671B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 26, 2021·2 cites·19 claims
- 3776US7411208B2Phase-change memory device having a barrier layer and manufacturing methodSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 12, 2008·20 cites·44 claims
- 3875US11349074B2Memory cell and memory device comprising selection device layer, middle electrode layer and variable resistance layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 31, 2022·0 cites·19 claims
- 3975US10804466B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 13, 2020·0 cites·20 claims
- 4075US9805444B2Magnetic random access memory (MRAM)-based frame buffering apparatus, display driving apparatus and display apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 31, 2017·4 cites·17 claims
- 4174US9928892B2Memory apparatuses having ground switchesSEO BO YOUNG·Filed 2016·Granted Mar 27, 2018·4 cites·9 claims
- 4272US10651236B2Semiconductor device including variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 12, 2020·2 cites·20 claims
- 4372US10615341B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 7, 2020·1 cites·18 claims
- 4471US10580979B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 3, 2020·1 cites·12 claims
- 4570US10224086B2Memory device with temperature-dependent reading of a reference cellSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 5, 2019·1 cites·20 claims
- 4669US11462679B2Magnetoresistive random access memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 4, 2022·0 cites·13 claims
- 4769US10249820B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 2, 2019·1 cites·20 claims
- 4868US11659770B2Semiconductor device, magnetoresistive random access memory device, and semiconductor chip including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 23, 2023·0 cites·20 claims
- 4968US10163976B2Magnetoresistive random access memory device and method of manufacturing the sameSUH KI SEOK·Filed 2017·Granted Dec 25, 2018·1 cites·15 claims
- 5068US10141373B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 27, 2018·1 cites·12 claims
Showing the top 50 of 73 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →