Inventor · disambiguated record
Gwo-Shii Yang
Also filed as: YANG GWO-SHII
20 granted patents·4 pending applications·445 citations·filing 1998–2009
96Inventor score
Top patents by PatentIndex Score
24 records- 0187US6559004B1Method for forming three dimensional semiconductor structure and three dimensional capacitorUNITED MICROELECTRONICS CORP·Filed 2001·Granted May 6, 2003·51 cites·15 claims
- 0286US6475865B1Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2000·Granted Nov 5, 2002·36 cites·6 claims
- 0381US5956598AMethod for fabricating a shallow-trench isolation structure with a rounded corner in integrated circuitUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 21, 1999·63 cites·10 claims
- 0480US6238989B1Process of forming self-aligned silicide on source/drain regionUNITED MICROELECTRONICS CORP·Filed 2000·Granted May 29, 2001·40 cites·17 claims
- 0579US6306722B1Method for fabricating shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 1999·Granted Oct 23, 2001·53 cites·22 claims
- 0678US6750129B2Process for forming fusible linksINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 15, 2004·27 cites·27 claims
- 0767US6146974AMethod of fabricating shallow trench isolation (STI)UNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 14, 2000·32 cites·18 claims
- 0864US6583489B2Method for forming interconnect structure with low dielectric constantUNITED MICROELECTRONICS CORP·Filed 2002·Granted Jun 24, 2003·10 cites·8 claims
- 0963US6254676B1Method for manufacturing metal oxide semiconductor transistor having raised source/drainUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 3, 2001·28 cites·20 claims
- 1061US6316330B1Method of fabricating a shallow trench isolation semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2000·Granted Nov 13, 2001·7 cites·3 claims
- 1155US6251783B1Method of manufacturing shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jun 26, 2001·20 cites·10 claims
- 1248US2010084683A1Light emitting diode package and fabricating method thereofNOVALITE OPTRONICS CORP·Filed 2009·Application pending·0 cites
- 1347US6806182B2Method for eliminating via resistance shift in organic ILDIBM·Filed 2002·Granted Oct 19, 2004·2 cites·9 claims
- 1447US6249138B1Method for testing leakage current caused self-aligned silicideUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jun 19, 2001·13 cites·12 claims
- 1545US6180492B1Method of forming a liner for shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jan 30, 2001·12 cites·11 claims
- 1644US6200904B1Method of forming a contact hole of a DRAMUNITED MICROELECTRONICS CORP·Filed 1999·Granted Mar 13, 2001·12 cites·8 claims
- 1744US6087262AMethod for manufacturing shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jul 11, 2000·11 cites·15 claims
- 1843US6248644B1Method of fabricating shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jun 19, 2001·10 cites·9 claims
- 1943US6228742B1Method of fabricating shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 8, 2001·10 cites·14 claims
- 2043US2007194422A1Light emitting diode package and fabricating method thereofNOVALITE OPTRONICS CORP·Filed 2006·Application pending·0 cites
- 2137US6281143B1Method of forming borderless contactUNITED MICROELECTRONICS CORP·Filed 1999·Granted Aug 28, 2001·6 cites·17 claims
- 2237US2002155261A1Method for forming interconnect structure with low dielectric constantFiled 2001·Application pending·0 cites
- 2336US2002176996A1Method of electroplatingFiled 2001·Application pending·0 cites
- 2432US6218243B1Method of fabricating a DRAM capacitorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 17, 2001·2 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →