Inventor · disambiguated record
Hajime Akiyama
Also filed as: AKIYAMA HAJIME
52 granted patents·2 pending applications·532 citations·filing 1989–2019
98Inventor score
Top patents by PatentIndex Score
54 records- 0193US6307232B1Semiconductor device having lateral high breakdown voltage elementMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 23, 2001·115 cites·3 claims
- 0290US9659795B2Foreign matter removal device and foreign matter removal methodOKADA AKIRA·Filed 2012·Granted May 23, 2017·12 cites·9 claims
- 0389US9347988B2Semiconductor testing jig and semiconductor testing method performed by using the sameAKIYAMA HAJIME·Filed 2013·Granted May 24, 2016·9 cites·11 claims
- 0488US8324657B2Semiconductor deviceSHIMIZU KAZUHIRO·Filed 2011·Granted Dec 4, 2012·6 cites·2 claims
- 0587US6037634ASemiconductor device with first and second elements formed on first and second portionsMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 14, 2000·70 cites·8 claims
- 0686US7481885B2Semiconductor device manufacturing apparatus, semiconductor device manufacturing method and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Jan 27, 2009·8 cites·4 claims
- 0782US7417296B2Dielectric isolation type semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Aug 26, 2008·11 cites·16 claims
- 0882US7408228B2Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltageMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Aug 5, 2008·10 cites·3 claims
- 0980US5160985AInsulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Nov 3, 1992·38 cites·14 claims
- 1076US9188624B2Inspection apparatusOKADA AKIRA·Filed 2013·Granted Nov 17, 2015·3 cites·15 claims
- 1176US9157931B2Probe cardOKADA AKIRA·Filed 2013·Granted Oct 13, 2015·3 cites·12 claims
- 1276US8609443B2Semiconductor device manufacturing methodSHIMIZU KAZUHIRO·Filed 2012·Granted Dec 17, 2013·2 cites·7 claims
- 1375US7125780B2Dielectric isolation type semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Oct 24, 2006·6 cites·6 claims
- 1475US6246101B1Isolation structure and semiconductor device including the isolation structureMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 12, 2001·49 cites·35 claims
- 1574US7190034B2Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltageMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Mar 13, 2007·6 cites·7 claims
- 1674US5804864AHigh withstand voltage semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 8, 1998·32 cites·9 claims
- 1773US5994189AHigh withstand voltage semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 30, 1999·29 cites·1 claims
- 1871US6603176B2Power semiconductor device for power integrated circuit deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Aug 5, 2003·18 cites·12 claims
- 1970US9257316B2Semiconductor testing jig and transfer jig for the sameMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Feb 9, 2016·2 cites·19 claims
- 2067US8975681B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Mar 10, 2015·2 cites·8 claims
- 2167US7977787B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Jul 12, 2011·1 cites·1 claims
- 2266US10068814B2Apparatus and method for evaluating semiconductor device comprising thermal image processingMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Sep 4, 2018·1 cites·15 claims
- 2364US8980655B2Test apparatus and test methodMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Mar 17, 2015·1 cites·20 claims
- 2464US7851873B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Dec 14, 2010·2 cites·12 claims
- 2563US9207257B2Inspection apparatusOKADA AKIRA·Filed 2013·Granted Dec 8, 2015·1 cites·16 claims
- 2663US8981805B2Inspection apparatus and inspection methodOKADA AKIRA·Filed 2013·Granted Mar 17, 2015·1 cites·12 claims
- 2763US8125045B2Dielectric isolation type semiconductor device and manufacturing method thereforAKIYAMA HAJIME·Filed 2008·Granted Feb 28, 2012·2 cites·4 claims
- 2863US7777279B2Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltageMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Aug 17, 2010·2 cites·5 claims
- 2962US8823360B2Semiconductor deviceAKIYAMA HAJIME·Filed 2011·Granted Sep 2, 2014·1 cites·4 claims
- 3062US8071454B1Method for manufacturing dielectric isolation type semiconductor deviceAKIYAMA HAJIME·Filed 2010·Granted Dec 6, 2011·1 cites·7 claims
- 3162US7135752B2Dielectric isolation type semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Nov 14, 2006·10 cites·7 claims
- 3260US6992363B2Dielectric separation type semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Jan 31, 2006·9 cites·15 claims
- 3359US7485943B2Dielectric isolation type semiconductor device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Feb 3, 2009·1 cites·3 claims
- 3456US9121899B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Sep 1, 2015·0 cites·14 claims
- 3556US7545005B2Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltageMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Jun 9, 2009·0 cites·3 claims
- 3656US5292672AMethod of manufacturing an insulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Mar 8, 1994·24 cites·6 claims
- 3754US9335371B2Semiconductor evaluating device and semiconductor evaluating methodMITSUBISHI ELECTRIC CORP·Filed 2013·Granted May 10, 2016·0 cites·19 claims
- 3854US6163040AThyristor manufacturing method and thyristorMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 19, 2000·21 cites·4 claims
- 3953US5182626AInsulated gate bipolar transistor and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jan 26, 1993·21 cites·5 claims
- 4049US10228129B2Waste gasification melting apparatus and waste gasification melting method using the sameJFE ENG CORP·Filed 2014·Granted Mar 12, 2019·0 cites·18 claims
- 4147US10228412B2Semiconductor device and method for testing sameMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Mar 12, 2019·0 cites·15 claims
- 4246US10192797B2Semiconductor device and electrical contact structure thereofMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Jan 29, 2019·0 cites·19 claims
- 4346US9995786B2Apparatus and method for evaluating semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Jun 12, 2018·0 cites·15 claims
- 4446US9678143B2Semiconductor evaluation apparatusMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Jun 13, 2017·0 cites·11 claims
- 4546US9117880B2Method for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Aug 25, 2015·0 cites·14 claims
- 4645US10868123B2SiC-SOI device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Dec 15, 2020·0 cites·3 claims
- 4745US9880196B2Semiconductor device inspection apparatus and semiconductor device inspection methodMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Jan 30, 2018·0 cites·9 claims
- 4845US9551745B2Semiconductor device assessment apparatusMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Jan 24, 2017·0 cites·13 claims
- 4945US9312160B2Wafer suction method, wafer suction stage, and wafer suction systemAKIYAMA HAJIME·Filed 2012·Granted Apr 12, 2016·0 cites·9 claims
- 5044US9117656B2Semiconductor cleaning device and semiconductor cleaning methodOKADA AKIRA·Filed 2012·Granted Aug 25, 2015·0 cites·22 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →