Inventor · disambiguated record
Haowen Bu
Also filed as: BU HAOWEN
73 granted patents·23 pending applications·919 citations·filing 2002–2024
99Inventor score
Top patents by PatentIndex Score
96 records- 0198US7061058B2Forming a retrograde well in a transistor to enhance performance of the transistorTEXAS INSTRUMENTS INC·Filed 2005·Granted Jun 13, 2006·125 cites·12 claims
- 0297US6930007B2Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performanceTEXAS INSTRUMENTS INC·Filed 2003·Granted Aug 16, 2005·190 cites·2 claims
- 0394US7135361B2Method for fabricating transistor gate structures and gate dielectrics thereofTEXAS INSTRUMENTS INC·Filed 2003·Granted Nov 14, 2006·62 cites·40 claims
- 0492US7060579B2Increased drive current by isotropic recess etchTEXAS INSTRUMENTS INC·Filed 2004·Granted Jun 13, 2006·62 cites·17 claims
- 0590US7442597B2Systems and methods that selectively modify liner induced stressTEXAS INSTRUMENTS INC·Filed 2005·Granted Oct 28, 2008·18 cites·18 claims
- 0689US10157915B1Capacitor with improved voltage coefficientsTEXAS INSTRUMENTS INC·Filed 2017·Granted Dec 18, 2018·5 cites·21 claims
- 0789US9583336B1Process to enable ferroelectric layers on large area substratesTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 28, 2017·8 cites·19 claims
- 0889US9177806B2System and method for mitigating oxide growth in a gate dielectricBEVAN MALCOLM J·Filed 2011·Granted Nov 3, 2015·6 cites·12 claims
- 0988US7122435B2Methods, systems and structures for forming improved transistorsTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 17, 2006·45 cites·18 claims
- 1087US7906441B2System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 15, 2011·6 cites·20 claims
- 1187US7045431B2Method for integrating high-k dielectrics in transistor devicesTEXAS INSTRUMENTS INC·Filed 2003·Granted May 16, 2006·42 cites·19 claims
- 1286US6677201B1Method of fabricating thermal CVD oxynitride and BTBAS nitride sidewall spacer for metal oxide semiconductor transistorsTEXAS INSTRUMENTS INC·Filed 2002·Granted Jan 13, 2004·34 cites·7 claims
- 1382US7932139B2Methodology of improving the manufacturability of laser annealTEXAS INSTRUMENTS INC·Filed 2007·Granted Apr 26, 2011·6 cites·22 claims
- 1481US10644098B2Precision capacitorTEXAS INSTRUMENTS INC·Filed 2018·Granted May 5, 2020·2 cites·14 claims
- 1581US7700467B2Methodology of implementing ultra high temperature (UHT) anneal in fabricating devices that contain sigeTEXAS INSTRUMENTS INC·Filed 2007·Granted Apr 20, 2010·8 cites·22 claims
- 1681US7012028B2Transistor fabrication methods using reduced width sidewall spacersTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 14, 2006·26 cites·24 claims
- 1781US6812073B2Source drain and extension dopant concentrationTEXAS INSTRUMENTS INC·Filed 2002·Granted Nov 2, 2004·26 cites·12 claims
- 1879US7514331B2Method of manufacturing gate sidewalls that avoids recessingTEXAS INSTRUMENTS INC·Filed 2006·Granted Apr 7, 2009·6 cites·19 claims
- 1979US7157358B2Method for using a wet etch to manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the sameTEXAS INSTRUMENTS INC·Filed 2004·Granted Jan 2, 2007·20 cites·19 claims
- 2078US7226834B2PMD liner nitride films and fabrication methods for improved NMOS performanceTEXAS INSTRUMENTS INC·Filed 2004·Granted Jun 5, 2007·21 cites·22 claims
- 2177US6806149B2Sidewall processes using alkylsilane precursors for MOS transistor fabricationTEXAS INSTRUMENTS INC·Filed 2002·Granted Oct 19, 2004·22 cites·10 claims
- 2276US11710764B2IC with 3D metal-insulator-metal capacitorTEXAS INSTRUMENTS INC·Filed 2018·Granted Jul 25, 2023·2 cites·36 claims
- 2375US7253049B2Method for fabricating dual work function metal gatesTEXAS INSTRUMENTS INC·Filed 2004·Granted Aug 7, 2007·19 cites·30 claims
- 2474US7217626B2Transistor fabrication methods using dual sidewall spacersTEXAS INSTRUMENTS INC·Filed 2004·Granted May 15, 2007·18 cites·21 claims
- 2574US7208380B2Interface improvement by stress application during oxide growth through use of backside filmsTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 24, 2007·4 cites·20 claims
- 2673US7847401B2Methods, systems and structures for forming semiconductor structures incorporating high-temperature processing stepsTEXAS INSTRUMENTS INC·Filed 2009·Granted Dec 7, 2010·3 cites·6 claims
- 2773US7670892B2Nitrogen based implants for defect reduction in strained siliconTEXAS INSTRUMENTS INC·Filed 2005·Granted Mar 2, 2010·3 cites·7 claims
- 2873US7148143B2Semiconductor device having a fully silicided gate electrode and method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2004·Granted Dec 12, 2006·15 cites·18 claims
- 2972US8962350B2Multi-step deposition of ferroelectric dielectric materialTEXAS INSTRUMENTS INC·Filed 2014·Granted Feb 24, 2015·2 cites·16 claims
- 3072US7897513B2Method for forming a metal silicideTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 1, 2011·5 cites·19 claims
- 3171US8084312B2Nitrogen based implants for defect reduction in strained siliconCHAKRAVARTHI SRINIVASAN·Filed 2010·Granted Dec 27, 2011·3 cites·9 claims
- 3271US7129127B2Integration scheme to improve NMOS with poly cap while mitigating PMOS degradationTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 31, 2006·16 cites·21 claims
- 3370US12494425B2Integration scheme to build resistor, capacitor, efuse using silicon-rich dielectric layer as a base dielectricTEXAS INSTRUMENTS INC·Filed 2021·Granted Dec 9, 2025·0 cites·17 claims
- 3470US11670671B2Precision capacitorTEXAS INSTRUMENTS INC·Filed 2021·Granted Jun 6, 2023·0 cites·9 claims
- 3569US7338888B2Method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the sameTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 4, 2008·12 cites·16 claims
- 3668US8114784B2Laminated stress overlayer using In-situ multiple plasma treatments for transistor improvementBU HAOWEN·Filed 2010·Granted Feb 14, 2012·2 cites·6 claims
- 3767US10068771B2System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2018·Granted Sep 4, 2018·0 cites·19 claims
- 3867US7553718B2Methods, systems and structures for forming semiconductor structures incorporating high-temperature processing stepsTEXAS INSTRUMENTS INC·Filed 2005·Granted Jun 30, 2009·2 cites·12 claims
- 3967US7173296B2Reduced hydrogen sidewall spacer oxideTEXAS INSTRUMENTS INC·Filed 2004·Granted Feb 6, 2007·9 cites·3 claims
- 4067US6927137B2Forming a retrograde well in a transistor to enhance performance of the transistorTEXAS INSTRUMENTS INC·Filed 2003·Granted Aug 9, 2005·9 cites·12 claims
- 4166US11569342B2Precision capacitorTEXAS INSTRUMENTS INC·Filed 2020·Granted Jan 31, 2023·0 cites·12 claims
- 4266US7795122B2Antimony ion implantation for semiconductor componentsTEXAS INSTRUMENTS INC·Filed 2007·Granted Sep 14, 2010·2 cites·23 claims
- 4366US6921703B2System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2003·Granted Jul 26, 2005·10 cites·7 claims
- 4465US9892927B2System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2017·Granted Feb 13, 2018·0 cites·30 claims
- 4565US8546259B2Nickel silicide formation for semiconductor componentsDELOACH JUANITA·Filed 2007·Granted Oct 1, 2013·3 cites·34 claims
- 4664US9779946B2System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2017·Granted Oct 3, 2017·0 cites·23 claims
- 4764US8822236B2Hydrogen-blocking film for ferroelectric capacitorsTEXAS INSTRUMENTS INC·Filed 2013·Granted Sep 2, 2014·1 cites·9 claims
- 4864US8471307B2In-situ carbon doped e-SiGeCB stack for MOS transistorKHAMANKAR RAJESH B·Filed 2009·Granted Jun 25, 2013·4 cites·7 claims
- 4963US9576804B2System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 21, 2017·0 cites·20 claims
- 5062US9337046B1System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2016·Granted May 10, 2016·0 cites·23 claims
Showing the top 50 of 96 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Haowen Bu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →