Inventor · disambiguated record
Han-Chin Chiu
Also filed as: CHIU HAN-CHIN
53 granted patents·9 pending applications·140 citations·filing 2012–2024
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD33INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD13INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD9TAIWAN SEMICONDUCTOR MFG4CHEN CHI-MING1
Top patents by PatentIndex Score
62 records- 0196US8803158B1High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 12, 2014·24 cites·20 claims
- 0295US9425301B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·14 cites·17 claims
- 0394US11522066B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·2 cites·20 claims
- 0493US10522647B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·5 cites·20 claims
- 0593US9847401B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 19, 2017·14 cites·17 claims
- 0692US8912570B2High electron mobility transistor and method of forming the sameCHIANG CHEN-HAO·Filed 2012·Granted Dec 16, 2014·21 cites·18 claims
- 0790US9666683B2Surface treatment and passivation for high electron mobility transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 30, 2017·5 cites·20 claims
- 0889US9525054B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 20, 2016·8 cites·20 claims
- 0988US9601608B2Structure for a gallium nitride (GaN) high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 21, 2017·10 cites·20 claims
- 1084US12317532B2Semiconductor device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted May 27, 2025·1 cites·13 claims
- 1184US12279444B2Semiconductor device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Apr 15, 2025·1 cites·20 claims
- 1284US9978844B2HEMT-compatible lateral rectifier structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 22, 2018·3 cites·20 claims
- 1383US11984486B2Method of implanting dopants into a group III-nitride structure and device formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
- 1483US10991803B2HEMT-compatible lateral rectifier structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 27, 2021·2 cites·20 claims
- 1583US9685525B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 20, 2017·2 cites·20 claims
- 1683US9236464B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 12, 2016·5 cites·20 claims
- 1782US12289901B2Semiconductor device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Apr 29, 2025·1 cites·20 claims
- 1882US9941398B2High-electron-mobility transistor (HEMT) capable of protecting a III-V compound layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·3 cites·9 claims
- 1981US9876093B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 23, 2018·2 cites·20 claims
- 2081US9633920B2Low damage passivation layer for III-V based devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 25, 2017·4 cites·17 claims
- 2180US10868136B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·1 cites·20 claims
- 2279US10847316B2MIM device with laminated dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·3 cites·20 claims
- 2379US9899493B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·2 cites·20 claims
- 2478US12295165B2Semiconductor device structureINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2024·Granted May 6, 2025·0 cites·7 claims
- 2575US11594606B2Method of implanting dopants into a group III-nitride structure and device formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·0 cites·20 claims
- 2675US11575021B2Surface treatment and passivation for high electron mobility transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 2773US11757005B2HEMT-compatible lateral rectifier structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·0 cites·20 claims
- 2873US9214539B2Gallium nitride transistor with a hybrid aluminum oxide layer as a gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 15, 2015·3 cites·20 claims
- 2970US11776934B2Semiconductor apparatus and fabrication method thereofINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 3067US9130026B2Crystalline layer for passivation of III-N surfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 8, 2015·2 cites·20 claims
- 3166US11563097B2High electron mobility transistor and fabrication method thereofINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2019·Granted Jan 24, 2023·1 cites·23 claims
- 3266US11367706B2Semiconductor apparatus and fabrication method thereofINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2020·Granted Jun 21, 2022·0 cites·23 claims
- 3366US11004951B2Surface treatment and passivation for high electron mobility transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·0 cites·20 claims
- 3465US11038025B2HEMT-compatible lateral rectifier structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
- 3565US10937878B2Method of implanting dopants into a group III-nitride structure and device formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 2, 2021·0 cites·20 claims
- 3664US12021121B2Semiconductor device structures and methods of manufacturing the sameINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2020·Granted Jun 25, 2024·0 cites·15 claims
- 3762US10522645B2Surface treatment and passivation for high electron mobility transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·0 cites·20 claims
- 3861US9564330B2Normally-off enhancement-mode MISFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 7, 2017·1 cites·20 claims
- 3960US10157994B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 18, 2018·0 cites·20 claims
- 4060US10020376B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 10, 2018·0 cites·20 claims
- 4159US10170579B2Surface treatment and passivation for high electron mobility transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·0 cites·20 claims
- 4258US10164038B2Method of implanting dopants into a group III-nitride structure and device formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 25, 2018·0 cites·19 claims
- 4358US2025301740A1Semiconductor structure and method of forming the sameHON HAI PREC IND CO LTD·Filed 2024·Application pending·0 cites
- 4457US10269948B2High-electron-mobility transistor (HEMT) structure capable of protecting a III-V compound layer and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·0 cites·31 claims
- 4556US11784237B2Semiconductor devices and methods of manufacturing the sameINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2019·Granted Oct 10, 2023·0 cites·20 claims
- 4656US9224847B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·0 cites·20 claims
- 4755US9373689B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jun 21, 2016·0 cites·20 claims
- 4854US12068373B2Semiconductor device and fabrication method thereofINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2020·Granted Aug 20, 2024·0 cites·23 claims
- 4954US2020203502A1High Electron Mobility Transistor and Method for Manufacturing the SameINNOSCIENCE ZHUHAI TECHNOLOGY CO LTD·Filed 2019·Application pending·0 cites
- 5050US12274082B2Semiconductor device and method for manufacturing the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2021·Granted Apr 8, 2025·0 cites·19 claims
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →