Inventor · disambiguated record
Hanmei Choi
Also filed as: CHOI HANMEI
26 granted patents·11 pending applications·164 citations·filing 2009–2025
95Inventor score
Top patents by PatentIndex Score
37 records- 0197US9716104B2Vertical memory devices having dummy channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 25, 2017·39 cites·19 claims
- 0297US9536970B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSEOL KWANG SOO·Filed 2011·Granted Jan 3, 2017·43 cites·12 claims
- 0395US10153292B2Vertical memory devices having dummy channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 11, 2018·12 cites·13 claims
- 0492US10903327B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 26, 2021·2 cites·19 claims
- 0591US8697498B2Methods of manufacturing three dimensional semiconductor memory devices using sub-platesJANG BYONG-HYUN·Filed 2011·Granted Apr 15, 2014·18 cites·10 claims
- 0689US9929179B2Nonvolatile semiconductor devices including non-circular shaped channel patterns and methods of manufacturing the sameSON YONG HOON·Filed 2017·Granted Mar 27, 2018·5 cites·20 claims
- 0787US9972636B2Vertical memory devices having dummy channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 15, 2018·4 cites·21 claims
- 0887US9768266B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 19, 2017·3 cites·15 claims
- 0985US8987803B2Three dimensional semiconductor memory devices and methods of manufacturing the sameCHAE SOODOO·Filed 2012·Granted Mar 24, 2015·9 cites·12 claims
- 1085US8377817B2Three dimensional semiconductor memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Feb 19, 2013·8 cites·10 claims
- 1184US11888042B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 30, 2024·0 cites·19 claims
- 1283US10468431B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 5, 2019·3 cites·20 claims
- 1383US9564499B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 7, 2017·3 cites·20 claims
- 1482US2023044895A1Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1581US2025081462A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1680US11057183B2Nonvolatile semiconductor devices including non-circular shaped channel patterns and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 6, 2021·2 cites·18 claims
- 1779US9293336B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 22, 2016·7 cites·18 claims
- 1876US11588032B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 21, 2023·0 cites·20 claims
- 1976US10056491B2Semiconductor devices including gate dielectric structuresSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 21, 2018·2 cites·15 claims
- 2073US8854614B2Methods of thermally treating a semiconductor waferSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Oct 7, 2014·4 cites·15 claims
- 2161US2017345907A1Three-dimensional semiconductor memory devices and methods of fabricating the sameSEOL KWANG SOO·Filed 2017·Application pending·0 cites
- 2260US11854864B2Semiconductor device including trench isolation layer and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·16 claims
- 2357US2021384217A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 2456US2025386502A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2554US11462553B2Semiconductor device having vertical fence structuresSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 4, 2022·0 cites·20 claims
- 2654US2023200077A1Semiconductor device and an electronic system including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2752US10020318B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 10, 2018·0 cites·19 claims
- 2852US2025287597A1Semiconductor devices and data storage systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2951US11211284B2Semiconductor device including trench isolation layer and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 28, 2021·0 cites·18 claims
- 3051US9184302B2Three dimensional semiconductor memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 10, 2015·0 cites·8 claims
- 3145US9537029B2Semiconductor device with an epitaxial layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 3, 2017·0 cites·19 claims
- 3244US9443932B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 13, 2016·0 cites·12 claims
- 3336US9728666B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 8, 2017·0 cites·36 claims
- 3436US2019051554A1Wafer Support Assembly Including Ion Implantation Mask StructureSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 3534US2011303971A1Three-dimensional semiconductor memory device and method for manufacturing the sameLEE CHANGWON·Filed 2011·Application pending·0 cites
- 3633US2010052041A1Nonvolatile Memory Devices Having Charge-Trap Layers Therein with Relatively High Election AffinityYANG JUNKYU·Filed 2009·Application pending·0 cites
- 3729US2016126119A1Laser annealing apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →