Three-dimensional semiconductor memory devices and methods of fabricating the same

Abstract

Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.

What is claimed is: 
     
         1 . A semiconductor memory device comprising:
 a plurality of stacked structures comprising a plurality of electrodes and insulating patterns that are stacked alternately and repeatedly on a substrate;   a plurality of semiconductor patterns penetrating the stacked structures;   an electrode isolation pattern between the stacked structures;   a tunneling layer and a charge storage layer extending between the electrodes and one of the semiconductor patterns and extending between the insulating patterns and the one of semiconductor patterns; and   a blocking layer extending between the electrodes and the one of the semiconductor patterns and extending between the insulating patterns and the electrode isolation pattern.   
     
     
         2 . The semiconductor memory device of  claim 1 , wherein the tunneling layer and the charge storage layer surround the one of the semiconductor patterns. 
     
     
         3 . The semiconductor memory device of  claim 1 , wherein the blocking layer covers top and bottom surfaces of the electrodes. 
     
     
         4 . The semiconductor memory device of  claim 1 ,
 wherein the tunneling layer and the charge storage layer extend along a sidewall of the one of the semiconductor patterns, and   wherein the blocking layer comprises a non-planar shape that extends in a direction perpendicular to a surface of the substrate.   
     
     
         5 . The semiconductor memory device of  claim 1 , wherein the blocking layer comprises a different material from the electrode isolation pattern and the insulating patterns. 
     
     
         6 . The semiconductor memory device of  claim 1 , further comprising a capping layer between the insulating patterns and the charge storage layer. 
     
     
         7 . The semiconductor memory device of  claim 6 , wherein a length of the capping layer is shorter than a length of the tunneling layer, in a direction perpendicular to a surface of the substrate. 
     
     
         8 . The semiconductor memory device of  claim 1 , wherein:
 the tunneling layer comprises at least one silicon oxide layer;   the charge storage layer comprises one of an insulating layer with a higher density of trap sites than a silicon oxide layer and an insulating layer with intrinsic conductive nano particles; and   the blocking layer comprises at least one of an aluminum oxide layer, a hafnium oxide layer, a zirconium oxide layer, a tantalum oxide layer, a titanium oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer.   
     
     
         9 . A semiconductor memory device comprising:
 a stacked structure comprising a plurality of electrodes and insulating patterns that are stacked alternately and repeatedly on a substrate;   a semiconductor pattern penetrating the stacked structure; and   a tunneling layer, a charge storage layer, and a blocking layer between the semiconductor pattern and the electrodes,   wherein each of the insulating patterns has a first sidewall adjacent the semiconductor pattern and a second sidewall opposite the first sidewall,   wherein the tunneling layer and the charge storage layer extend along the first sidewalls of the respective insulating patterns, and   wherein the blocking layer extends along the second sidewalls of the respective insulating patterns.   
     
     
         10 . The semiconductor memory device of  claim 9 , wherein the tunneling layer and the charge storage layer surround the semiconductor pattern. 
     
     
         11 . The semiconductor memory device of  claim 9 , wherein the blocking layer covers top and bottom surfaces of the electrodes. 
     
     
         12 . The semiconductor memory device of  claim 9 , wherein the blocking layer comprises a different material from the insulating patterns. 
     
     
         13 . The semiconductor memory device of  claim 9 , wherein the blocking layer has a wavy shape that extends in a direction perpendicular to a surface of the substrate. 
     
     
         14 . The semiconductor memory device of  claim 9 , further comprising a capping layer between the insulating patterns and the charge storage layer,
 wherein a length of the capping layer is shorter than a length of the tunneling layer, in a direction perpendicular to a surface of the substrate.   
     
     
         15 . The semiconductor memory device of  claim 9 , wherein:
 the tunneling layer comprises at least one silicon oxide layer;   the charge storage layer comprises one of an insulating layer with a higher density of trap sites than a silicon oxide layer and an insulating layer with intrinsic conductive nano particles; and   the blocking insulating layer comprises at least one of an aluminum oxide layer, a hafnium oxide layer, a zirconium oxide layer, a tantalum oxide layer, a titanium oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a silicon oxide layer.