Inventor · disambiguated record
Sunghoi Hur
Also filed as: HUR SUNGHOI
43 granted patents·6 pending applications·515 citations·filing 2009–2023
98Inventor score
Top patents by PatentIndex Score
49 records- 0199US8767473B2Programming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed therebySAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 1, 2014·64 cites·6 claims
- 0299US8278170B2Methods of forming nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings thereinLEE CHANGHYUN·Filed 2011·Granted Oct 2, 2012·117 cites·19 claims
- 0397US9536970B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSEOL KWANG SOO·Filed 2011·Granted Jan 3, 2017·43 cites·12 claims
- 0497US9362306B2Semiconductor device and method of fabricating the samePARK JINTAEK·Filed 2015·Granted Jun 7, 2016·31 cites·7 claims
- 0597US8395190B2Three-dimensional semiconductor memory deviceSHIM SUNIL·Filed 2010·Granted Mar 12, 2013·40 cites·20 claims
- 0697US8319275B2Integrated circuit memory devices having selection transistors with nonuniform threshold voltage characteristicsSHIM SUNIL·Filed 2010·Granted Nov 27, 2012·28 cites·13 claims
- 0796US8570805B2Nonvolatile memory device, programming method thereof and memory system including the sameLEE CHANGHYUN·Filed 2011·Granted Oct 29, 2013·55 cites·25 claims
- 0895US9728549B2Semiconductor devices and methods for forming the sameYUN JANG-GN·Filed 2015·Granted Aug 8, 2017·10 cites·20 claims
- 0992US10903327B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 26, 2021·2 cites·19 claims
- 1092US9000508B2Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings thereinSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 7, 2015·14 cites·22 claims
- 1190US10763222B2Three-dimensional semiconductor devices having vertical structures of different lengthsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 1, 2020·8 cites·20 claims
- 1290US8514625B2Programming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed therebySHIM SUNIL·Filed 2010·Granted Aug 20, 2013·11 cites·9 claims
- 1389US8637920B2Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristicsSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jan 28, 2014·8 cites·10 claims
- 1489US8546869B2Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings thereinLEE CHANGHYUN·Filed 2012·Granted Oct 1, 2013·8 cites·3 claims
- 1587US9768266B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 19, 2017·3 cites·15 claims
- 1686US9299718B2Semiconductor device and method of fabricating the samePARK JINTAEK·Filed 2015·Granted Mar 29, 2016·5 cites·20 claims
- 1786US8603906B2Method of forming a three-dimensional semiconductor memory device comprising sub-cells, terraced structures and strapping regionsSHIM SUNIL·Filed 2013·Granted Dec 10, 2013·6 cites·12 claims
- 1884US11888042B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 30, 2024·0 cites·19 claims
- 1984US8625357B2Local self-boosting method of flash memory device and program method using the sameCHO BYUNGKYU·Filed 2010·Granted Jan 7, 2014·11 cites·14 claims
- 2083US9564499B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 7, 2017·3 cites·20 claims
- 2182US2023044895A1Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2280US8107289B2Nonvolatile memory deviceSHIM SUNIL·Filed 2011·Granted Jan 31, 2012·5 cites·10 claims
- 2380US8027197B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 27, 2011·7 cites·18 claims
- 2478US12029040B2Semiconductor device, systems and methods of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·21 claims
- 2578US8295097B2Channel precharge and program methods of a nonvolatile memory deviceCHO BYUNGKYU·Filed 2010·Granted Oct 23, 2012·7 cites·20 claims
- 2676US11588032B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 21, 2023·0 cites·20 claims
- 2776US10910398B2Semiconductor devices and methods for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 2, 2021·1 cites·12 claims
- 2876US9831265B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 28, 2017·3 cites·20 claims
- 2976US8933505B2Three-dimensional semiconductor memory deviceHUR SUNGHOI·Filed 2013·Granted Jan 13, 2015·5 cites·13 claims
- 3076US8929145B2Nonvolatile memory device, programming method thereof and memory system including the sameLEE CHANGHYUN·Filed 2013·Granted Jan 6, 2015·5 cites·6 claims
- 3175US12022653B2Semiconductor devices and methods for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 25, 2024·0 cites·20 claims
- 3273US8445954B2Three-dimensional semiconductor memory deviceJANG YOUNGGOAN·Filed 2009·Granted May 21, 2013·6 cites·13 claims
- 3370US10043816B2Semiconductor device, systems and methods of manufactureTAEKYUNG KIM·Filed 2014·Granted Aug 7, 2018·2 cites·25 claims
- 3467US11545503B2Semiconductor device, systems and methods of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 3, 2023·0 cites·18 claims
- 3562US8406062B2Charge recycling memory system and a charge recycling method thereofSEOL KWNAG SOO·Filed 2010·Granted Mar 26, 2013·4 cites·18 claims
- 3661US10541248B2Semiconductor device, systems and methods of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 21, 2020·0 cites·20 claims
- 3761US2017345907A1Three-dimensional semiconductor memory devices and methods of fabricating the sameSEOL KWANG SOO·Filed 2017·Application pending·0 cites
- 3860US9064597B2Memory semiconductor device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 23, 2015·1 cites·5 claims
- 3958US8644064B2Memory semiconductor device and method of operating the sameCHO BYUNGKYU·Filed 2011·Granted Feb 4, 2014·2 cites·11 claims
- 4057US2017323901A1Semiconductor Devices and Methods for Forming the SameYUN JANG-GN·Filed 2017·Application pending·0 cites
- 4155US9012977B2Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristicsSHIM SUNIL·Filed 2014·Granted Apr 21, 2015·0 cites·18 claims
- 4246US10672787B2Three-dimensional semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 2, 2020·0 cites·20 claims
- 4345USRE46623EProgramming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed therebySAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 5, 2017·0 cites·23 claims
- 4440US8368138B2Non-volatile memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 5, 2013·0 cites·10 claims
- 4539US8791520B2Non-volatile memory devices having a floating gate cap between a floating gate and a gate insulating layerLEE JAEDUK·Filed 2011·Granted Jul 29, 2014·0 cites·6 claims
- 4638US8110834B2Three-dimensional semiconductor devices including select gate patterns having different work function from cell gate patternsKIM JINHO·Filed 2010·Granted Feb 7, 2012·0 cites·16 claims
- 4735US2014061757A1Semiconductor devices and methods of fabricating the sameKIM SUNGGIL·Filed 2013·Application pending·0 cites
- 4834US2011073928A1Non-Volatile Memory Devices Having Semiconductor Barrier Patterns and Methods of Forming Such DevicesCHO BYUNGKYU·Filed 2010·Application pending·0 cites
- 4926US2016148947A1Memory devices and methods of manufacturing the sameSEO JUN-HO·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →