Inventor · disambiguated record
Harry Gomez
Also filed as: GOMEZ HARRY
14 granted patents·2 pending applications·235 citations·filing 2007–2025
93Inventor score
Top patents by PatentIndex Score
16 records- 0197US8313999B2Multi-gate semiconductor device with self-aligned epitaxial source and drainCAPPELLANI ANNALISA·Filed 2009·Granted Nov 20, 2012·70 cites·14 claims
- 0296US9461143B2Gate contact structure over active gate and method to fabricate samePETHE ABHIJIT JAYANT·Filed 2012·Granted Oct 4, 2016·62 cites·28 claims
- 0396US8735869B2Strained gate-all-around semiconductor devices formed on globally or locally isolated substratesCAPPELLANI ANNALISA·Filed 2012·Granted May 27, 2014·22 cites·18 claims
- 0496US7732285B2Semiconductor device having self-aligned epitaxial source and drain extensionsINTEL CORP·Filed 2007·Granted Jun 8, 2010·41 cites·7 claims
- 0594US9608059B2Semiconductor device with isolated body portionCAPPELLANI ANNALISA·Filed 2011·Granted Mar 28, 2017·18 cites·28 claims
- 0692US10026829B2Semiconductor device with isolated body portionINTEL CORP·Filed 2017·Granted Jul 17, 2018·8 cites·25 claims
- 0788US10192783B2Gate contact structure over active gate and method to fabricate sameINTEL CORP·Filed 2016·Granted Jan 29, 2019·4 cites·18 claims
- 0884US9484272B2Methods for fabricating strained gate-all-around semiconductor devices by fin oxidation using an undercut etch-stop layerCAPPELLANI ANNALISA·Filed 2014·Granted Nov 1, 2016·4 cites·6 claims
- 0982US2025233020A1Gate contact structure over active gate and method to fabricate sameINTEL CORP·Filed 2025·Application pending·0 cites
- 1079US10847631B2Gate-all-around (GAA) transistors with nanowires on an isolation pedestalINTEL CORP·Filed 2019·Granted Nov 24, 2020·1 cites·11 claims
- 1176US11004739B2Gate contact structure over active gate and method to fabricate sameINTEL CORP·Filed 2018·Granted May 11, 2021·1 cites·20 claims
- 1275US10229981B2Gate-all-around (GAA) transistor with stacked nanowires on locally isolated substrateINTEL CORP·Filed 2016·Granted Mar 12, 2019·1 cites·3 claims
- 1374US12278144B2Gate contact structure over active gate and method to fabricate sameINTEL CORP·Filed 2021·Granted Apr 15, 2025·0 cites·20 claims
- 1474US9425212B2Isolated and bulk semiconductor devices formed on a same bulk substrateCAPPELLANI ANNALISA·Filed 2012·Granted Aug 23, 2016·3 cites·14 claims
- 1558US2025374619A1Gated subfin reduction techniques in nanoribbon-based transistorsINTEL CORP·Filed 2024·Application pending·0 cites
- 1652US9978636B2Isolated and bulk semiconductor devices formed on a same bulk substrateINTEL CORP·Filed 2016·Granted May 22, 2018·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →