Inventor · disambiguated record
Haigou Huang
Also filed as: HUANG HAIGOU
65 granted patents·7 pending applications·541 citations·filing 2009–2021
98Inventor score
Top patents by PatentIndex Score
72 records- 0198US10176995B1Methods, apparatus and system for gate cut process using a stress material in a finFET deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 8, 2019·29 cites·20 claims
- 0298US10103238B1Nanosheet field-effect transistor with full dielectric isolationGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 16, 2018·57 cites·20 claims
- 0398US9812365B1Methods of cutting gate structures on transistor devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 7, 2017·26 cites·18 claims
- 0498US9679985B1Devices and methods of improving device performance through gate cut last processGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 13, 2017·30 cites·14 claims
- 0597US10217846B1Vertical field effect transistor formation with critical dimension controlGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 26, 2019·21 cites·11 claims
- 0697US10090169B1Methods of forming integrated circuit structures including opening filled with insulator in metal gateGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 2, 2018·18 cites·19 claims
- 0797US9911736B1Method of forming field effect transistors with replacement metal gates and contacts and resulting structureGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 6, 2018·86 cites·15 claims
- 0897US9466723B1Liner and cap layer for placeholder source/drain contact structure planarization and replacementGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 11, 2016·31 cites·15 claims
- 0996US9761491B1Self-aligned deep contact for vertical FETGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 12, 2017·16 cites·20 claims
- 1095US10325819B1Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 18, 2019·15 cites·20 claims
- 1195US10211315B2Vertical field-effect transistor having a dielectric spacer between a gate electrode edge and a self-aligned source/drain contactGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 19, 2019·11 cites·7 claims
- 1294US10211103B1Advanced structure for self-aligned contact and method for producing the sameGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 19, 2019·18 cites·7 claims
- 1394US9916982B1Dielectric preservation in a replacement gate processGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 13, 2018·10 cites·14 claims
- 1494US9711447B1Self-aligned lithographic patterning with variable spacingsGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 18, 2017·15 cites·20 claims
- 1594US9123773B1T-shaped single diffusion barrier with single mask approach process flowGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 1, 2015·34 cites·20 claims
- 1693US10269654B1Methods, apparatus and system for replacement contact for a finFET deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 23, 2019·12 cites·20 claims
- 1793US9991361B2Methods for performing a gate cut last scheme for FinFET semiconductor devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 5, 2018·9 cites·20 claims
- 1892US9837553B1Vertical field effect transistorGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 5, 2017·8 cites·16 claims
- 1992US9123771B2Shallow trench isolation integration methods and devices formed therebyGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 1, 2015·13 cites·19 claims
- 2091US10586860B2Method of manufacturing finfet devices using narrow and wide gate cut openings in conjunction with a replacement metal gate processGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 10, 2020·6 cites·10 claims
- 2191US10483369B2Methods of forming replacement gate structures on transistor devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 19, 2019·7 cites·11 claims
- 2291US10014298B1Method of forming field effect transistors with replacement metal gates and contacts and resulting structureGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 3, 2018·7 cites·17 claims
- 2391US9589807B1Method for eliminating interlayer dielectric dishing and controlling gate height uniformityGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 7, 2017·11 cites·20 claims
- 2489US10418272B1Methods, apparatus, and system for a semiconductor device comprising gates with short heightsGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 17, 2019·4 cites·14 claims
- 2588US10062772B2Preventing bridge formation between replacement gate and source/drain region through STI structureGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 28, 2018·5 cites·10 claims
- 2688US9922972B1Embedded silicon carbide block patterningGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 20, 2018·6 cites·16 claims
- 2786US10644156B2Methods, apparatus, and system for reducing gate cut gouging and/or gate height loss in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2018·Granted May 5, 2020·5 cites·12 claims
- 2884US9935012B1Methods for forming different shapes in different regions of the same layerGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 3, 2018·4 cites·20 claims
- 2984US9865543B1Structure and method for inhibiting cobalt diffusionGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 9, 2018·4 cites·12 claims
- 3082US9385192B2Shallow trench isolation integration methods and devices formed therebyGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 5, 2016·3 cites·7 claims
- 3180US10418455B2Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 17, 2019·2 cites·9 claims
- 3280US9401416B2Method for reducing gate height variation due to overlapping masksGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 26, 2016·4 cites·21 claims
- 3378US9991363B1Contact etch stop layer with sacrificial polysilicon layerGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 5, 2018·2 cites·19 claims
- 3477US10431500B1Multi-step insulator formation in trenches to avoid seams in insulatorsGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 1, 2019·2 cites·19 claims
- 3577US10204797B1Methods, apparatus, and system for reducing step height difference in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 12, 2019·2 cites·20 claims
- 3677US10204784B1Methods of forming features on integrated circuit productsGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 12, 2019·2 cites·16 claims
- 3775US10923388B2Gap fill void and connection structuresGLOBALFOUNDRIES INC·Filed 2019·Granted Feb 16, 2021·1 cites·18 claims
- 3872US9230822B1Uniform gate height for mixed-type non-planar semiconductor devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 5, 2016·2 cites·9 claims
- 3971US10559470B2Capping structureGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 11, 2020·1 cites·18 claims
- 4068US9698018B1Introducing self-aligned dopants in semiconductor finsGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 4, 2017·1 cites·20 claims
- 4166US11651992B2Gap fill void and connection structuresGLOBALFOUNDRIES US INC·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 4266US9754837B1Controlling within-die uniformity using doped polishing materialGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 5, 2017·1 cites·16 claims
- 4360US10930549B2Cap structureGLOBALFOUNDRIES INC·Filed 2019·Granted Feb 23, 2021·0 cites·15 claims
- 4459US11114542B2Semiconductor device with reduced gate height budgetGLOBALFOUNDRIES US INC·Filed 2019·Granted Sep 7, 2021·0 cites·19 claims
- 4559US10964599B2Multi-step insulator formation in trenches to avoid seams in insulatorsGLOBALFOUNDRIES US INC·Filed 2019·Granted Mar 30, 2021·0 cites·18 claims
- 4659US10522639B2Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET deviceGLOBALFOUNDRIES INC·Filed 2019·Granted Dec 31, 2019·0 cites·12 claims
- 4758US11349013B2IC product comprising a novel insulating gate separation structure for transistor devicesGLOBALFOUNDRIES US INC·Filed 2019·Granted May 31, 2022·0 cites·20 claims
- 4856US10460986B2Cap structureGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 29, 2019·0 cites·20 claims
- 4956US2019355615A1Methods, apparatus, and system for a semiconductor device comprising gates with short heightsGLOBALFOUNDRIES INC·Filed 2019·Application pending·0 cites
- 5055US10347729B2Device for improving performance through gate cut last processGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 9, 2019·0 cites·4 claims
Showing the top 50 of 72 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →