Inventor · disambiguated record
Haruhisa Mori
Also filed as: MORI HARUHISA
12 granted patents·281 citations·filing 1979–1996
93Inventor score
Top patents by PatentIndex Score
12 records- 0191US4375993AMethod of producing a semiconductor device by simultaneous multiple laser annealingFUJITSU LTD·Filed 1981·Granted Mar 8, 1983·84 cites·22 claims
- 0283US4788473APlasma generating device with stepped waveguide transitionFUJITSU LTD·Filed 1987·Granted Nov 29, 1988·33 cites·25 claims
- 0371US4381202ASelective epitaxy by beam energy and devices thereonFUJITSU LTD·Filed 1981·Granted Apr 26, 1983·33 cites·5 claims
- 0467US4889820AMethod of producing a semiconductor deviceFUJITSU LTD·Filed 1989·Granted Dec 26, 1989·23 cites·12 claims
- 0567US4785188APrimary particle beam irradiation apparatus and method of irradiation thereofFUJITSU LTD·Filed 1987·Granted Nov 15, 1988·16 cites·17 claims
- 0663US4806769ADisk exchangeable target mechanism with effective cooling means, for ion implantation systemFUJITSU LTD·Filed 1987·Granted Feb 21, 1989·12 cites·20 claims
- 0757US4500365ALaser treating implanted semiconductor surface through photo-resist layerFUJITSU LTD·Filed 1983·Granted Feb 19, 1985·20 cites·7 claims
- 0856US4803884AMethod for measuring lattice defects in semiconductorFUJITSU LTD·Filed 1987·Granted Feb 14, 1989·17 cites·11 claims
- 0952US5727511ACylinder liner and cylinder block and method for producing the cylinder liner and the cylinder blockRYOBI LTD·Filed 1996·Granted Mar 17, 1998·12 cites·19 claims
- 1052US4258077AMethod of ion implantation into a semiconductor substrate provided with an insulating filmFUJITSU LTD·Filed 1979·Granted Mar 24, 1981·12 cites·12 claims
- 1147US4410801AIon implantation equipmentFUJITSU LTD·Filed 1980·Granted Oct 18, 1983·5 cites·7 claims
- 1246US5795494ASemiconductor substrate cleaning method and semiconductor device fabrication methodFUJITSU LTD·Filed 1995·Granted Aug 18, 1998·14 cites·11 claims
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