Inventor · disambiguated record
Halid Mulaosmanovic
Also filed as: MULAOSMANOVIC HALID · MULAOSMANOVIĆ HALID
9 granted patents·6 pending applications·234 citations·filing 2016–2024
87Inventor score
Top patents by PatentIndex Score
15 records- 0195US10963776B2Artificial neuron based on ferroelectric circuit elementNAMLAB GGMBH·Filed 2019·Granted Mar 30, 2021·62 cites·31 claims
- 0295US10043567B2Multilevel ferroelectric memory cell for an integrated circuitNAMLAB GGMBH·Filed 2017·Granted Aug 7, 2018·69 cites·17 claims
- 0395US9830969B2Multilevel ferroelectric memory cell for an integrated circuitNAMLAB GGMBH·Filed 2016·Granted Nov 28, 2017·84 cites·19 claims
- 0489US10424379B2Polarization-based configurable logic gateNAMLAB GGMBH·Filed 2017·Granted Sep 24, 2019·17 cites·19 claims
- 0586US10978125B1Transistor with adjustable rectifying transfer characteristicNAMLAB GGMBH·Filed 2020·Granted Apr 13, 2021·2 cites·21 claims
- 0669US12336230B1IC structure with MFMIS memory cell and CMOS transistorGLOBALFOUNDRIES US INC·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 0762US12176023B2Non-volatile static random access memory bit cells with ferroelectric field-effect transistorsGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 0858US12268019B2Ferroelectric field-effect transistors with a hybrid wellGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 0958US2025275223A1Bipolar transistor structure with ferroelectric materialGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1058US2025159905A1Switching memory elements accessed by heterojunction bipolar transistorsGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 1157US12159935B2Structures for a ferroelectric field-effect transistor and related methodsGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2022·Granted Dec 3, 2024·0 cites·18 claims
- 1257US2025227943A1Heterojunction bipolar transistors including an intrinsic base with an asymmetrical dopant depth profileGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1356US2025227999A1Crystalline semiconductor layer between bipolar transistor and field effect transistor structuresGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1456US2025228009A1Bipolar transistor base structure coupled to field effect transistor gate structureGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1555US2025194098A1Structure with ferroelectric memory stacks having different switching voltages and related methodsGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →