Inventor · disambiguated record
Hao Thai Nguyen
Also filed as: NGUYEN HAO · NGUYEN HAO T · NGUYEN HAO THAI
42 granted patents·2 pending applications·515 citations·filing 2007–2023
98Inventor score
Files withSANDISK CORP16SANDISK TECHNOLOGIES LLC9SANDISK TECHNOLOGIES INC6NGUYEN HAO THAI5MICRON TECHNOLOGY INC4
Top patents by PatentIndex Score
44 records- 0198US7551477B2Multiple bit line voltages based on distanceSANDISK CORP·Filed 2007·Granted Jun 23, 2009·80 cites·49 claims
- 0297US7447079B2Method for sensing negative threshold voltages in non-volatile storage using current sensingSANDISK CORP·Filed 2007·Granted Nov 4, 2008·50 cites·19 claims
- 0396US11562791B1Memory devices with four data line bias levelsMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 24, 2023·6 cites·24 claims
- 0495US7593265B2Low noise sense amplifier array and method for nonvolatile memorySANDISK CORP·Filed 2007·Granted Sep 22, 2009·29 cites·24 claims
- 0593US9633742B2Segmentation of blocks for faster bit line settling/recovery in non-volatile memory devicesSANDISK TECHNOLOGIES LLC·Filed 2014·Granted Apr 25, 2017·19 cites·18 claims
- 0693US9558836B2Compact high speed sense amplifier for non-volatile memory with reduced layout area and power consumptionSANDISK TECHNOLOGIES LLC·Filed 2015·Granted Jan 31, 2017·12 cites·20 claims
- 0792US8582381B2Temperature based compensation during verify operations for non-volatile storageOOWADA KEN·Filed 2012·Granted Nov 12, 2013·17 cites·16 claims
- 0892US7795952B2Regulation of recovery rates in charge pumpsSANDISK CORP·Filed 2008·Granted Sep 14, 2010·60 cites·13 claims
- 0992US7471567B1Method for source bias all bit line sensing in non-volatile storageSANDISK CORP·Filed 2007·Granted Dec 30, 2008·26 cites·20 claims
- 1091US9293195B2Compact high speed sense amplifier for non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2012·Granted Mar 22, 2016·16 cites·22 claims
- 1191US7957197B2Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense nodeSANDISK CORP·Filed 2008·Granted Jun 7, 2011·22 cites·10 claims
- 1289US10643695B1Concurrent multi-state program verify for non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 5, 2020·10 cites·19 claims
- 1389US9305648B2Techniques for programming of select gates in NAND memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 5, 2016·9 cites·22 claims
- 1489US7978526B2Low noise sense amplifier array and method for nonvolatile memorySANDISK CORP·Filed 2009·Granted Jul 12, 2011·15 cites·24 claims
- 1588US7606076B2Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noiseSANDISK CORP·Filed 2008·Granted Oct 20, 2009·19 cites·20 claims
- 1686US8971141B2Compact high speed sense amplifier for non-volatile memory and hybrid lockoutSANDISK TECHNOLOGIES INC·Filed 2013·Granted Mar 3, 2015·10 cites·18 claims
- 1785US9947407B2Techniques for programming of select gates in NAND memorySANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 17, 2018·5 cites·20 claims
- 1885US7606071B2Compensating source voltage drop in non-volatile storageSANDISK CORP·Filed 2007·Granted Oct 20, 2009·15 cites·24 claims
- 1984US10304550B1Sense amplifier with negative threshold sensing for non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 28, 2019·6 cites·20 claims
- 2084US9659656B2Techniques for programming of select gates in NAND memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 23, 2017·5 cites·24 claims
- 2184US8169831B2High speed sense amplifier array and method for non-volatile memoryNGUYEN HAO THAI·Filed 2011·Granted May 1, 2012·8 cites·17 claims
- 2281US8755234B2Temperature based compensation during verify operations for non-volatile storageSANDISK TECHNOLOGIES INC·Filed 2013·Granted Jun 17, 2014·6 cites·10 claims
- 2380US7545678B2Non-volatile storage with source bias all bit line sensingSANDISK CORP·Filed 2007·Granted Jun 9, 2009·12 cites·20 claims
- 2478US7751249B2Minimizing power noise during sensing in memory deviceSANDISK CORP·Filed 2008·Granted Jul 6, 2010·10 cites·21 claims
- 2577US8364107B2Signal degradation detectionECHOSTAR TECHNOLOGIES LLC·Filed 2010·Granted Jan 29, 2013·6 cites·18 claims
- 2674US9349468B2Operational amplifier methods for charging of sense amplifier internal nodesSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 24, 2016·5 cites·20 claims
- 2774US7751250B2Memory device with power noise minimization during sensingSANDISK CORP·Filed 2008·Granted Jul 6, 2010·8 cites·21 claims
- 2874US7532516B2Non-volatile storage with current sensing of negative threshold voltagesSANDISK CORP·Filed 2007·Granted May 12, 2009·6 cites·19 claims
- 2971US11915758B2Memory devices with four data line bias levelsMICRON TECHNOLOGY INC·Filed 2023·Granted Feb 27, 2024·0 cites·20 claims
- 3071US7489554B2Method for current sensing with biasing of source and P-well in non-volatile storageSANDISK CORP·Filed 2007·Granted Feb 10, 2009·5 cites·20 claims
- 3167US11875861B2Memory cell sensingMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 16, 2024·0 cites·25 claims
- 3266US9959915B2Voltage generator to compensate for process corner and temperature variationsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 1, 2018·2 cites·20 claims
- 3365US8824989B2Signal degradation detectionECHOSTAR TECHNOLOGIES LLC·Filed 2012·Granted Sep 2, 2014·2 cites·20 claims
- 3464US11508444B2Memory cell sensingMICRON TECHNOLOGY INC·Filed 2021·Granted Nov 22, 2022·0 cites·26 claims
- 3564US8830745B2Memory system with unverified program stepSANDISK TECHNOLOGIES INC·Filed 2013·Granted Sep 9, 2014·3 cites·20 claims
- 3664US8737132B2Charge cycling by equalizing the source and bit line levels between pulses during no-verify write operations for NAND flash memoryNGUYEN HAO THAI·Filed 2012·Granted May 27, 2014·2 cites·10 claims
- 3764US7606072B2Non-volatile storage with compensation for source voltage dropSANDISK CORP·Filed 2007·Granted Oct 20, 2009·5 cites·26 claims
- 3861US9595338B2Utilizing NAND strings in dummy blocks for faster bit line prechargeSANDISK TECHNOLOGIES LLC·Filed 2014·Granted Mar 14, 2017·2 cites·16 claims
- 3955US8811075B2Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: verify to program transitionNGUYEN HAO THAI·Filed 2012·Granted Aug 19, 2014·1 cites·18 claims
- 4051US7539060B2Non-volatile storage using current sensing with biasing of source and P-WellSANDISK CORP·Filed 2007·Granted May 26, 2009·1 cites·20 claims
- 4144US8842471B2Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: program to verify transitionNGUYEN HAO THAI·Filed 2012·Granted Sep 23, 2014·0 cites·14 claims
- 4244US8300472B2Low noise sense amplifier array and method for nonvolatile memoryNGUYEN HAO THAI·Filed 2011·Granted Oct 30, 2012·0 cites·17 claims
- 4342US2014003176A1Compact High Speed Sense Amplifier for Non-Volatile Memory with Reduced layout Area and Power ConsumptionMUI MAN LUNG·Filed 2012·Application pending·0 cites
- 4436US2019164581A1Sense amplifier with comparison node biasing for non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →