Inventor · disambiguated record
Harsono S. Simka
Also filed as: SIMKA HARSONO · SIMKA HARSONO S · SIMKA HARSONO SIEM
34 granted patents·26 pending applications·205 citations·filing 2002–2025
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD29INTEL CORP17LAVOIE ADRIEN R4SIMKA HARSONO S3ADVANCED TECH MATERIALS1
Top patents by PatentIndex Score
60 records- 0195US11537898B2Generative structure-property inverse computational co-design of materialsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 27, 2022·5 cites·20 claims
- 0295US7220671B2Organometallic precursors for the chemical phase deposition of metal films in interconnect applicationsINTEL CORP·Filed 2005·Granted May 22, 2007·66 cites·17 claims
- 0392US12356665B2Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 8, 2025·2 cites·18 claims
- 0491US7682891B2Tunable gate electrode work function material for transistor applicationsINTEL CORP·Filed 2006·Granted Mar 23, 2010·19 cites·20 claims
- 0590US9932671B2Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD)INTEL CORP·Filed 2014·Granted Apr 3, 2018·10 cites·8 claims
- 0689US7470617B2Treating a liner layer to reduce surface oxidesINTEL CORP·Filed 2007·Granted Dec 30, 2008·20 cites·13 claims
- 0788US10957579B2Integrated circuit devices including a via and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 23, 2021·9 cites·20 claims
- 0885US8319287B2Tunable gate electrode work function material for transistor applicationsLAVOIE ADRIEN R·Filed 2010·Granted Nov 27, 2012·7 cites·18 claims
- 0984US7354849B2Catalytically enhanced atomic layer deposition processINTEL CORP·Filed 2006·Granted Apr 8, 2008·13 cites·15 claims
- 1082US11043454B2Low resistivity interconnects with doped barrier layer for integrated circuitsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 22, 2021·3 cites·8 claims
- 1182US7851360B2Organometallic precursors for seed/barrier processes and methods thereofINTEL CORP·Filed 2007·Granted Dec 14, 2010·9 cites·30 claims
- 1280US11087055B2Method of screening materials using forward conducting modesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 10, 2021·3 cites·14 claims
- 1379US8779589B2Liner layers for metal interconnectsSIMKA HARSONO S·Filed 2010·Granted Jul 15, 2014·8 cites·21 claims
- 1479US8425987B2Surface charge enhanced atomic layer deposition of pure metallic filmsDOMINGUEZ JUAN E·Filed 2008·Granted Apr 23, 2013·5 cites·13 claims
- 1579US7964746B2Copper precursors for CVD/ALD/digital CVD of copper metal filmsADVANCED TECH MATERIALS·Filed 2008·Granted Jun 21, 2011·3 cites·14 claims
- 1677US10381315B2Method and system for providing a reverse-engineering resistant hardware embedded security moduleSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 13, 2019·2 cites·20 claims
- 1777US7858525B2Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fillINTEL CORP·Filed 2007·Granted Dec 28, 2010·5 cites·5 claims
- 1875US7749906B2Using unstable nitrides to form semiconductor structuresINTEL CORP·Filed 2006·Granted Jul 6, 2010·3 cites·17 claims
- 1974US2025311304A1Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2070US7476615B2Deposition process for iodine-doped ruthenium barrier layersINTEL CORP·Filed 2006·Granted Jan 13, 2009·3 cites·45 claims
- 2167US12456647B2Nanosheet transistor devices and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 28, 2025·0 cites·16 claims
- 2267US2023317513A1Fully aligned via integration with selective catalyzed vapor phase grown materialsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2366US11705363B2Fully aligned via integration with selective catalyzed vapor phase grown materialsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·16 claims
- 2464US12497694B2Method of forming low-resistivity Ru ALD through a bi-layer process and related structuresUNIV CALIFORNIA·Filed 2022·Granted Dec 16, 2025·0 cites·19 claims
- 2564US7279084B2Apparatus having plating solution container with current applying anodesINTEL CORP·Filed 2004·Granted Oct 9, 2007·7 cites·6 claims
- 2663US7704895B2Deposition method for high-k dielectric materialsINTEL CORP·Filed 2008·Granted Apr 27, 2010·1 cites·10 claims
- 2761US11289419B2Interconnects having long grains and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 29, 2022·0 cites·20 claims
- 2860US2024429065A1Method of patterning elemental metalsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2958US7524765B2Direct tailoring of the composition and density of ALD filmsINTEL CORP·Filed 2005·Granted Apr 28, 2009·2 cites·8 claims
- 3058US2023178440A1Methods of forming integrated circuit devices including stacked transistors and integrated circuit devices formed by the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3157US11978668B2Integrated circuit devices including a via and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 7, 2024·0 cites·17 claims
- 3257US10916513B2Method and system for providing a reverse engineering resistant hardware embedded security moduleSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 9, 2021·0 cites·20 claims
- 3357US2025024689A1Two terminal spin-orbit torque magnetoresistive random access memory and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3455US10763207B2Interconnects having long grains and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 1, 2020·0 cites·1 claims
- 3555US2024429307A1Systems and methods of applying stress in transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3654US8344352B2Using unstable nitrides to form semiconductor structuresINTEL CORP·Filed 2011·Granted Jan 1, 2013·0 cites·20 claims
- 3754US2025257465A1Rapid process for vapor-deposited zif-8 metal organic framework (mof) for low-k dielectric seamless high aspect ratio gap fillSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3853US2024405128A1Field effect transistor (fet) and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3952US7982204B2Using unstable nitrides to form semiconductor structuresINTEL CORP·Filed 2010·Granted Jul 19, 2011·0 cites·6 claims
- 4052US2025072098A1Source/drain isolation of top and bottom tiers of 3d field-effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4152US2024347537A1Common output in 3d stack fetSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4252US2025366107A1System and methods for shaped epitaxial stressorsSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 4352US2025257457A1Electron-enhanced metal oxide atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4452US2024413232A1High performance fetsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4550US2024047539A13d stacked field-effect transistor device with pn junction structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 4650US2024047456A13dsfet standard cell architecture with source-drain junction isolationSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 4749US8012878B2Atomic layer volatilization process for metal layersINTEL CORP·Filed 2007·Granted Sep 6, 2011·0 cites·11 claims
- 4849US2008182021A1Continuous ultra-thin copper film formed using a low thermal budgetSIMKA HARSONO S·Filed 2007·Application pending·0 cites
- 4948US10825723B2Semiconductor device and method for making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 3, 2020·0 cites·18 claims
- 5047US2025359192A1System and method for high stress transfer to channelSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →